Проблемно-діалогічне спілкування в процесі інструментально-виконавської підготовки майбутнього вчителя музики

(uk) У статті розкривається значення проблемно-діалогічного спілкування в процесі інструментально-виконавської підготовки майбутнього вчителя музики, акцентується увага на тпринципах індивідуально-диференційованого навчання.(ru) В статье раскрывается значение проблемно-дилогического общения в процессе инструментально-исполнительской подготовки будущего учителя музики, акцентируется внимание на принципах индивидуально-диференцированного обучения

Selectivity enhancement of SiC-FET gas sensors by combining temperature and gate bias cycled operation using multivariate statistics

In this paper temperature modulation and gate bias modulation of a gas sensitive field effect transistor based on silicon carbide (SiC-FET) are combined in order to increase the selectivity. Data evaluation based on extracted features describing the shape of the sensor response was performed using multivariate statistics, here by Linear Discriminant Analysis (LDA). It was found that both temperature cycling and gate bias cycling are suitable for quantification of different concentrations of carbon monoxide. However, combination of both approaches enhances the stability of the quantification, respectively the discrimination of the groups in the LDA scatterplot. Feature selection based on the stepwise LDA algorithm as well as selection based on the loadings plot has shown that features both from the temperature cycle and from the bias cycle are equally important for the identification of carbon monoxide, nitrogen dioxide and ammonia. In addition, the presented method allows discrimination of these gases independent of the gas concentration. Hence, the selectivity of the FET is enhanced considerably

Increasing the Selectivity of Pt-Gate SiC Field Effect Gas Sensors by Dynamic Temperature Modulation

Based on a diode coupled silicon carbide field effect transistor (FET) with platinum as catalytic gate material, the influence of dynamic temperature modulation on the selectivity of gas analysis sensors FETs has been investigated. This operating mode, studied intensively for semiconductor gas sensors, has only recently been applied to FETs. A suitable temperature cycle for detection of typical exhaust gases (CO, NO, C3H6, H-2, NH3) was developed and combined with appropriate signal processing. The sensor data were evaluated using multivariate statistics, e.g., linear discriminant analysis. Measurements have proven that typical exhaust gases can be discriminated in backgrounds with 0, 10, and 20% oxygen. Furthermore, we are able to quantify the mentioned gases and to determine unknown concentrations based on training data. Very low levels of relative humidity below a few percent influence the sensor response considerably but for higher levels the cross interference of humidity is negligible. In addition, experiments regarding stability and reproducibility were performed.Funding Agencies|Swedish Research Council||Swedish Agency for Innovation Systems (VINNOVA)||Swedish Industry through the VINN Excellence Centre FunMat|

Формування етнопедагогічної компетентності вчителя початкових класів у контексті культурологічного підходу в освіті

У статті висвітлено теоретичні засади й вимоги культурологічного підходу в освіті, зверено увагу на визначення етнопедагогічної компетентності в контексті цього методологічного підходу та на специфіку формування зазначеного виду педагогічної компетентності в майбутніх учителів початкових класів

Discrimination and Quantification of Volatile Organic Compounds in the ppb-Range with Gas Sensitive SiC-Field Effect Transistors

Gas sensitive FETs based on SiC have been studied for the discrimination and quantification of hazardous volatile organiccompounds (VOCs) in the low ppb range. The sensor performance was increased by temperature cycled operation (TCO) anddata evaluation based on multivariate statistics, here Linear Discriminant Analysis (LDA). Discrimination of formaldehyde,naphthalene and benzene with varying concentrations in the ppb range is demonstrated. In addition, it is shown that naphthalenecan be quantified in the relevant concentration range independent of the relative humidity and against a high ethanol background.Hence, gas sensitive SiC-FETs are suitable sensors for determining indoor air quality

Discrimination and Quantification of Volatile Organic Compounds in the ppb-Range with Gas Sensitive SiC-FETs Using Multivariate Statistics

Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been studied for indoor air quality applications. The selectivity of the sensors was increased by temperature cycled operation, TCO, and data evaluation based on multivariate statistics. Discrimination of benzene, naphthalene, and formaldehyde independent of the level of background humidity is possible by using shape describing features as input for Linear Discriminant Analysis, LDA, or Partial Least Squares – Discriminant Analysis, PLS-DA. Leave-one-out cross-validation leads to a correct classification rate of 90 % for LDA, and for PLS-DA a classification rate of 83 % is achieved. Quantification of naphthalene in the relevant concentration range, i.e. 0 ppb to 40 ppb, was performed by Partial Least Squares Regression and a combination of LDA with a second order polynomial fit function. The resolution of the model based on a calibration with three concentrations was approximately 8 ppb at 40 ppb naphthalene for both algorithms. Hence, the suggested strategy is suitable for on demand ventilation control in indoor air quality application systems.SENSIndoo

Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoorair quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330° C and at different levels of relative humidity up to 60 %, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.SENSIndoor (grant agreement no. 604311

Module miniaturization by ultra thin package stacking

The scope of the European project TIPS (Thin Interconnected Package Stacks) is the fabrication of ultra thin packages for electronic components and the subsequent stacking and interconnection of those packages to form highly compact modules. In the first part of this paper approaches to fabricate ultra thin 10 × 10 mm packages by embedding technologies for chips into printed circuit board environments will be discussed. One technology uses commercial flexible printed circuit board substrates (polyimide sandwiched in Cu layers) and respective fabrication processes. After initial patterning of the Cu the chips are die bonded to the flex substrates and subsequently laminated into build up layers. Electrical contact between the chip and a fan out routing on the outer layer of the package are made by micro via formation, electroplating and wet chemical structuring of the metal layers. The thickness of the embedded components is constricted to 50 μm in order to constrain the package thicknesses to a maximum of 100 μm with this approach. The alternative approach, the ultra thin chip package (UTCP) technology, aims at package thicknesses around 60 μm. In this case 20 μm thick chips are die-bonded to thin polyimide layer. A photo-definable polyimide is then applied over the assembled chips by spin-on technique. Contact pads are opened by exposure and development of the polyimide, followed by metal sputtering, electroplating and etching. In this approach the thickness of embedded components is typically 20-30 μm and final package thickness is in the range of 60 μm. In both approaches the packages are fabricated as batches consisting of 150 × 150 mm sheets of flex substrates. Stacking of individual packages can be performed in an automated package by package placement process using a frame as alignment tool and typical flexible printed circuit boards adhesives. In this way only known-good-packages are stacked in o- - rder to minimize yield loss. However, a more straight forward process is stacking of the packages using fabrication batches and established multilayer printed circuit board technologies. The disadvantage is the potential yield loss if one of the packages in a stacked layer is faulty. For either type of stacking process the individual stacks have to be milled out of the stack fabrication batch. Development issues, design considerations and results of first fabrication runs will be presented and discussed