Ohmic contacts to n-type germanium with low specific contact resistivity

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) x10<sup>-7</sup> Ω-cm<sup>2</sup> for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.<p></p&gt

Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples

Cygnus X-2: the Descendant of an Intermediate-Mass X-Ray Binary

The X-ray binary Cygnus X-2 (Cyg X-2) has recently been shown to contain a secondary that is much more luminous and hotter than is appropriate for a low-mass subgiant. We present detailed binary-evolution calculations which demonstrate that the present evolutionary state of Cyg X-2 can be understood if the secondary had an initial mass of around 3.5 M_sun and started to transfer mass near the end of its main-sequence phase (or, somewhat less likely, just after leaving the main sequence). Most of the mass of the secondary must have been ejected from the system during an earlier rapid mass-transfer phase. In the present phase, the secondary has a mass of around 0.5 M_sun with a non-degenerate helium core. It is burning hydrogen in a shell, and mass transfer is driven by the advancement of the burning shell. Cyg X-2 therefore is related to a previously little studied class of intermediate-mass X-ray binaries (IMXBs). We suggest that perhaps a significant fraction of X-ray binaries presently classified as low-mass X-ray binaries may be descendants of IMXBs and discuss some of the implications

Plaquette expectation value and gluon condensate in three dimensions

In three dimensions, the gluon condensate of pure SU(3) gauge theory has ultraviolet divergences up to 4-loop level only. By subtracting the corresponding terms from lattice measurements of the plaquette expectation value and extrapolating to the continuum limit, we extract the finite part of the gluon condensate in lattice regularization. Through a change of regularization scheme to MSbar and (inverse) dimensional reduction, this result would determine the first non-perturbative coefficient in the weak-coupling expansion of hot QCD pressure.Comment: 11 page

Generalized four-point characterization method for resistive and capacitive contacts

In this paper, a four-point characterization method is developed for resistive samples connected to either resistive or capacitive contacts. Provided the circuit equivalent of the complete measurement system is known including coaxial cable and connector capacitances as well as source output and amplifier input impedances, a frequency range and capacitive scaling factor can be determined, whereby four-point characterization can be performed. The technique is demonstrated with a discrete element test sample over a wide frequency range using lock-in measurement techniques from 1 Hz - 100 kHz. The data fit well with a circuit simulation of the entire measurement system. A high impedance preamplifier input stage gives best results, since lock-in input impedances may differ from manufacturer specifications. The analysis presented here establishes the utility of capacitive contacts for four-point characterizations at low frequency.Comment: 21 pages, 10 figure

Time series of high resolution spectra of SN 2014J observed with the TIGRE telescope

We present a time series of high resolution spectra of the Type Ia supernova 2014J, which exploded in the nearby galaxy M82. The spectra were obtained with the HEROS echelle spectrograph installed at the 1.2 m TIGRE telescope. We present a series of 33 spectra with a resolution of R = 20, 000, which covers the important bright phases in the evolution of SN 2014J during the period from January 24 to April 1 of 2014. The spectral evolution of SN 2014J is derived empirically. The expansion velocities of the Si II P-Cygni features were measured and show the expected decreasing behaviour, beginning with a high velocity of 14,000 km/s on January 24. The Ca II infrared triplet feature shows a high velocity component with expansion velocities of > 20, 000 km/s during the early evolution apart from the normal component showing similar velocities as Si II. Further broad P-Cygni profiles are exhibited by the principal lines of Ca II, Mg II and Fe II. The TIGRE SN 2014J spectra also resolve several very sharp Na I D doublet absorption components. Our analysis suggests interesting substructures in the interstellar medium of the host galaxy M82, as well as in our Milky Way, confirming other work on this SN. We were able to identify the interstellar absorption of M82 in the lines of Ca II H & K at 3933 and 3968 A as well as K I at 7664 and 7698 A. Furthermore, we confirm several Diffuse Interstellar Bands, at wavelengths of 6196, 6283, 6376, 6379 and 6613 A and give their measured equivalent widths.Comment: 11 pages, 10 figures, accepted for publication in MNRA

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length is ~0.63 {\mu}m in the on-state for metal (Ti) contacted single-layer MoS2. These results reveal that MoS2 transistors are Schottky barrier transistors, where the on/off states are switched by the tuning the Schottky barriers at contacts. The effective barrier heights for source and drain barriers are primarily controlled by gate and drain biases, respectively. We discuss the drain induced barrier narrowing effect for short channel devices, which may reduce the influence of large contact resistance for MoS2 Schottky barrier transistors at the channel length scaling limit.Comment: ACS Nano, ASAP (2013

Measurement of Residual Stresses Around a Circular Patch Weld Using Barkhausen Noise

Welding is a common means of joining and repairing steel structures. In the case of steel tanks, circular patch welds are often used for repairing the structure after removal of a defective area. Unfortunately, the welding process also produces residual stresses which, if not relieved, can impair the integrity of the structure. Measurement of residual stresses produced by welding is needed, for example, to verify the effectiveness of a stress relief heat treatment which is typically used to remove weld-induced stresses

Optically tuned dimensionality crossover in photocarrier-doped SrTiO3_3: onset of weak localization

We report magnetotransport properties of photogenerated electrons in undoped SrTiO$_3$ single crystals under ultraviolet illumination down to 2 K. By tuning the light intensity, the steady state carrier density can be controlled, while tuning the wavelength controls the effective electronic thickness by modulating the optical penetration depth. At short wavelengths, when the sheet conductance is close to the two-dimensional Mott minimum conductivity we have observed critical behavior characteristic of weak localization. Negative magnetoresistance at low magnetic field is highly anisotropic, indicating quasi-two-dimensional electronic transport. The high mobility of photogenerated electrons in SrTiO$_3$ allows continuous tuning of the effective electronic dimensionality by photoexcitation.Comment: 7 pages, 7 figure