HTS quasiparticle injection devices with large current gain at 77 K

Recent progress on the development of planar QP-injection devices using YBCO and STO as an epitaxial injection barrier will be discussed. The main problem for HTS injection devices is to grow reliably a well defined, ultra-thin tunneling barrier suitable for QP tunneling. For this purpose, we used inverted cylindrical magnetron sputtering to first optimize the smoothness of our YBCO films by controlling tightly an relevant sputtering conditions. We are able to prepare smooth (001) YBCO films on (001) STO substrates on a routine basis with an average roughness varying between 1 and 2 nm. With these flat YBCO films both planar as well as grain boundary junctions were fabricated using epitaxial STO barriers between 2 and 8 nm thick and a 50 nm of Au counter electrode. Planar junctions with 6 nm STO barriers were in most cases fully insulating, in some cases, a current gain of up to 7.4 at 77 K was obtained. For 3 nm STO barriers, the highest current gain was 15 at 81 K. The injection results also show a scaling behavior with junction size. Based on the present materials development and device understanding, we consider a current gain of up to 20 at 77 K possibl

Material aspects for preparing HTS quasiparticle injection devices

Quasiparticle (QP) injection devices based on HTS could play an important role in future superconducting applications if material aspects can be better controlled. One reason why this kind of device received little attention in the past is the lack of an appropriate barrier for QP tunnelling. In a series of experiments, we used different barriers to test if they are suitable, i.e. if a current and possibly a voltage gain can be achieved. We improved the performance of planar YBCO/natural barrier/Au devices and a current gain of more than 6 at 40 K was observed. Most devices, however, showed signs of heating effects. Another barrier material was SrTiO3 with layers of 5-6 nm thickness. Current-voltage characteristics showed that the barriers were continuous and we observed current gains of up to 3 at 60 K. PrBa2 Cu3O7-x is an interesting candidate if one could overcome the problem of resonant inelastic tunnelling for QP. In a series of experiments we demonstrated that, even for 3 Mn thin PBCO barriers on a- and c-axis oriented YBa2Cu3O7-x, most devices showed at best a current gain of 1. However, we have indications that a current gain of 10 could be possible with unity voltage gai

Centaur 1939

Digitised by the Faculty of the Veterinary Scienc

Decoherence in ion traps due to laser intensity and phase fluctuations

We consider one source of decoherence for a single trapped ion due to intensity and phase fluctuations in the exciting laser pulses. For simplicity we assume that the stochastic processes involved are white noise processes, which enables us to give a simple master equation description of this source of decoherence. This master equation is averaged over the noise, and is sufficient to describe the results of experiments that probe the oscillations in the electronic populations as energy is exchanged between the internal and electronic motion. Our results are in good qualitative agreement with recent experiments and predict that the decoherence rate will depend on vibrational quantum number in different ways depending on which vibrational excitation sideband is used.Comment: 2 figures, submitted to PR

Efficient photoionization for barium ion trapping using a dipole-allowed resonant two-photon transition

Two efficient and isotope-selective resonant two-photon ionization techniques for loading barium ions into radio-frequency (RF)-traps are demonstrated. The scheme of using a strong dipole-allowed transition at \lambda=553 nm as a first step towards ionization is compared to the established technique of using a weak intercombination line (\lambda=413 nm). An increase of two orders of magnitude in the ionization efficiency is found favoring the transition at 553 nm. This technique can be implemented using commercial all-solid-state laser systems and is expected to be advantageous compared to other narrowband photoionization schemes of barium in cases where highest efficiency and isotope-selectivity are required.Comment: 8 pages, 5 figure

A Single Laser System for Ground-State Cooling of 25-Mg+

We present a single solid-state laser system to cool, coherently manipulate and detect $^{25}$Mg$^+$ ions. Coherent manipulation is accomplished by coupling two hyperfine ground state levels using a pair of far-detuned Raman laser beams. Resonant light for Doppler cooling and detection is derived from the same laser source by means of an electro-optic modulator, generating a sideband which is resonant with the atomic transition. We demonstrate ground-state cooling of one of the vibrational modes of the ion in the trap using resolved-sideband cooling. The cooling performance is studied and discussed by observing the temporal evolution of Raman-stimulated sideband transitions. The setup is a major simplification over existing state-of-the-art systems, typically involving up to three separate laser sources

Anisotropic conductivity of Nd_{1.85}Ce_{0.15}CuO_{4-\delta} films at submillimeter wavelengths

The anisotropic conductivity of thin Nd$_{1.85}$Ce$_{0.15}$CuO$_{4-\delta}$ films was measured in the frequency range 8 cm$^{-1}<\nu <$ 40 cm$^{-1}$ and for temperatures 4 K $<T<300$ K. A tilted sample geometry allowed to extract both, in-plane and c-axis properties. The in-plane quasiparticle scattering rate remains unchanged as the sample becomes superconducting. The temperature dependence of the in-plane conductivity is reasonably well described using the Born limit for a d-wave superconductor. Below T_{{\rm C}%} the c-axis dielectric constant $\epsilon_{1c}$ changes sign at the screened c-axis plasma frequency. The temperature dependence of the c-axis conductivity closely follows the linear in T behavior within the plane.Comment: 4 pages, 4 figure

A survey of partial differential equations in geometric design

YesComputer aided geometric design is an area where the improvement of surface generation techniques is an everlasting demand since faster and more accurate geometric models are required. Traditional methods for generating surfaces were initially mainly based upon interpolation algorithms. Recently, partial differential equations (PDE) were introduced as a valuable tool for geometric modelling since they offer a number of features from which these areas can benefit. This work summarises the uses given to PDE surfaces as a surface generation technique togethe