Intersection theorems for t-valued functions

AbstractThis paper investigates the maximum possible size of families ℱ of t-valued functions on an n-element set S = {1, 2, . . . , n}, assuming any two functions of ℱ agree in sufficiently many places. More precisely, given a family ℬ of k-element subsets of S, it is assumed for each pair h, g ∈ ℱ that there exists a B in ℬ such that h = g on B. If ℬ is ‘not too large’ it is shown that the maximal families have tn−k members

The distribution of oxygen at the Ni81Fe19/Ta interface

The knowledge of how oxygen atoms are distributed at a magnetic-metal / oxide, or magnetic-metal / non-magnetic-metal interface, can be an useful tool to optimize device production. Multilayered Ni81Fe19 / Ta samples consisting of 15 bilayers of 2.5 nm each, grown onto glass substrates by magnetron sputtering from Ni81Fe19 and Ta targets, have been investigated. X-ray absorption near edge structure, extended X-Ray absorption fine structure, small angle X-ray diffraction, and simulations, were used to characterize the samples. Oxygen atoms incorporated onto Ni81Fe19 films during O2 exposition are mainly bonded to Fe atoms. This partial oxidation of the Ni81Fe19 surface works as a barrier to arriving Ta atoms, preventing intermixing at the Ni81Fe19 / Ta interface. The reduction of the Ni81Fe19 surface by the formation of TaO x is observed.Comment: 14 pages, 9 figures, accepted for publication in Advances in Materials Science and Engineerin

Non-commutative geometry and the standard model vacuum

The space of Dirac operators for the Connes-Chamseddine spectral action for the standard model of particle physics coupled to gravity is studied. The model is extended by including right-handed neutrino states, and the S0-reality axiom is not assumed. The possibility of allowing more general fluctuations than the inner fluctuations of the vacuum is proposed. The maximal case of all possible fluctuations is studied by considering the equations of motion for the vacuum. Whilst there are interesting non-trivial vacua with Majorana-like mass terms for the leptons, the conclusion is that the equations are too restrictive to allow solutions with the standard model mass matrix.Comment: 21 pages. v2: some comments improve

Spin Polarization and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Devices

The magneto-Coulomb oscillation, the single electron repopulation induced by external magnetic field, observed in a ferromagnetic single electron transistor is further examined in various ferromagnetic single electron devices. In case of double- and triple-junction devices made of Ni and Co electrodes, the single electron repopulation always occurs from Ni to Co electrodes with increasing a magnetic field, irrespective of the configurations of the electrodes. The period of the magneto-Coulomb oscillation is proportional to the single electron charging energy. All these features are consistently explained by the mechanism that the Zeeman effect induces changes of the Fermi energy of the ferromagnetic metal having a non-zero spin polarizations. Experimentally determined spin polarizations are negative for both Ni and Co and the magnitude is larger for Ni than Co as expected from band calculations.Comment: 4 pages, 3 figures, uses jpsj.sty, submitted to J. Phys. Soc. Jp

Mesoscopic Tunneling Magnetoresistance

We study spin-dependent transport through ferromagnet/normal-metal/ferromagnet double tunnel junctions in the mesoscopic Coulomb blockade regime. A general transport equation allows us to calculate the conductance in the absence or presence of spin-orbit interaction and for arbitrary orientation of the lead magnetizations. The tunneling magnetoresistance (TMR), defined at the Coulomb blockade conductance peaks, is calculated and its probability distribution presented. We show that mesoscopic fluctuations can lead to the optimal value of the TMR.Comment: 5 pages, 3 eps figures included using epsf.sty. Revised text and improved notation, fig. 2 removed, explicit equations for the GSE case adde

Current and power spectrum in a magnetic tunnel device with an atomic size spacer

Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the spacer particle containing only a single energy level. It was shown that Coulomb interactions of electrons with a different spin orientation lead to an increase of the tunnel magnetoresistance. Interactions can also be responsible for the negative differential resistance. A current noise study showed, which relaxation processes can enhance or reduce fluctuations leading either to a super-Poissonian or a sub-Poissonian shot noise.Comment: 12 pages, 4 figure

Spin flip scattering in magnetic junctions

Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance, which saturates at low temperatures. The conductance increases at high fields. ii) Magnon assisted tunneling reduces the magnetoresistance as $T^{3/2}$, and leads to a non ohmic contribution to the resistance which goes as $V^{3/2}$, iii) Surface antiferromagnetic magnons, which may appear if the interface has different magnetic properties from the bulk, gives rise to $T^2$ and $V^2$ contributions to the magnetoresistance and resistance, respectively, and, iv) Coulomb blockade effects may enhance the magnetoresistance, when transport is dominated by cotunneling processes.Comment: 5 page

Linear response conductance and magneto-resistance of ferromagnetic single-electron transistors

The current through ferromagnetic single-electron transistors (SET's) is considered. Using path integrals the linear response conductance is formulated as a function of the tunnel conductance vs. quantum conductance and the temperature vs. Coulomb charging energy. The magneto-resistance of ferromagnet-normal metal-ferromagnet (F-N-F) SET's is almost independent of the Coulomb charging energy and is only reduced when the transport dwell time is longer than the spin-flip relaxation time. In all-ferromagnetic (F-F-F) SET's with negligible spin-flip relaxation time the magneto-resistance is calculated analytically at high temperatures and numerically at low temperatures. The F-F-F magneto-resistance is enhanced by higher order tunneling processes at low temperatures in the 'off' state when the induced charges vanishes. In contrast, in the 'on' state near resonance the magneto-resistance ratio is a non-monotonic function of the inverse temperature.Comment: 10 pages, 6 figures. accepted for publication in Phys. Rev.