120 research outputs found
Intersection theorems for t-valued functions
AbstractThis paper investigates the maximum possible size of families ℱ of t-valued functions on an n-element set S = {1, 2, . . . , n}, assuming any two functions of ℱ agree in sufficiently many places. More precisely, given a family ℬ of k-element subsets of S, it is assumed for each pair h, g ∈ ℱ that there exists a B in ℬ such that h = g on B. If ℬ is ‘not too large’ it is shown that the maximal families have tn−k members
The distribution of oxygen at the Ni81Fe19/Ta interface
The knowledge of how oxygen atoms are distributed at a magnetic-metal /
oxide, or magnetic-metal / non-magnetic-metal interface, can be an useful tool
to optimize device production. Multilayered Ni81Fe19 / Ta samples consisting of
15 bilayers of 2.5 nm each, grown onto glass substrates by magnetron sputtering
from Ni81Fe19 and Ta targets, have been investigated. X-ray absorption near
edge structure, extended X-Ray absorption fine structure, small angle X-ray
diffraction, and simulations, were used to characterize the samples. Oxygen
atoms incorporated onto Ni81Fe19 films during O2 exposition are mainly bonded
to Fe atoms. This partial oxidation of the Ni81Fe19 surface works as a barrier
to arriving Ta atoms, preventing intermixing at the Ni81Fe19 / Ta interface.
The reduction of the Ni81Fe19 surface by the formation of TaO x is observed.Comment: 14 pages, 9 figures, accepted for publication in Advances in
Materials Science and Engineerin
Non-commutative geometry and the standard model vacuum
The space of Dirac operators for the Connes-Chamseddine spectral action for
the standard model of particle physics coupled to gravity is studied. The model
is extended by including right-handed neutrino states, and the S0-reality axiom
is not assumed. The possibility of allowing more general fluctuations than the
inner fluctuations of the vacuum is proposed. The maximal case of all possible
fluctuations is studied by considering the equations of motion for the vacuum.
Whilst there are interesting non-trivial vacua with Majorana-like mass terms
for the leptons, the conclusion is that the equations are too restrictive to
allow solutions with the standard model mass matrix.Comment: 21 pages. v2: some comments improve
Spin Polarization and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Devices
The magneto-Coulomb oscillation, the single electron repopulation induced by
external magnetic field, observed in a ferromagnetic single electron transistor
is further examined in various ferromagnetic single electron devices. In case
of double- and triple-junction devices made of Ni and Co electrodes, the single
electron repopulation always occurs from Ni to Co electrodes with increasing a
magnetic field, irrespective of the configurations of the electrodes. The
period of the magneto-Coulomb oscillation is proportional to the single
electron charging energy. All these features are consistently explained by the
mechanism that the Zeeman effect induces changes of the Fermi energy of the
ferromagnetic metal having a non-zero spin polarizations. Experimentally
determined spin polarizations are negative for both Ni and Co and the magnitude
is larger for Ni than Co as expected from band calculations.Comment: 4 pages, 3 figures, uses jpsj.sty, submitted to J. Phys. Soc. Jp
Mesoscopic Tunneling Magnetoresistance
We study spin-dependent transport through
ferromagnet/normal-metal/ferromagnet double tunnel junctions in the mesoscopic
Coulomb blockade regime. A general transport equation allows us to calculate
the conductance in the absence or presence of spin-orbit interaction and for
arbitrary orientation of the lead magnetizations. The tunneling
magnetoresistance (TMR), defined at the Coulomb blockade conductance peaks, is
calculated and its probability distribution presented. We show that mesoscopic
fluctuations can lead to the optimal value of the TMR.Comment: 5 pages, 3 eps figures included using epsf.sty. Revised text and
improved notation, fig. 2 removed, explicit equations for the GSE case adde
Current and power spectrum in a magnetic tunnel device with an atomic size spacer
Current and its noise in a ferromagnetic double tunnel barrier device with a
small spacer particle were studied in the framework of the sequential tunneling
approach. Analytical formulae were derived for electron tunneling through the
spacer particle containing only a single energy level. It was shown that
Coulomb interactions of electrons with a different spin orientation lead to an
increase of the tunnel magnetoresistance. Interactions can also be responsible
for the negative differential resistance. A current noise study showed, which
relaxation processes can enhance or reduce fluctuations leading either to a
super-Poissonian or a sub-Poissonian shot noise.Comment: 12 pages, 4 figure
Spin flip scattering in magnetic junctions
Processes which flip the spin of an electron tunneling in a junction made up
of magnetic electrodes are studied. It is found that: i) Magnetic impurities
give a contribution which increases the resistance and lowers the
magnetoresistance, which saturates at low temperatures. The conductance
increases at high fields. ii) Magnon assisted tunneling reduces the
magnetoresistance as , and leads to a non ohmic contribution to the
resistance which goes as , iii) Surface antiferromagnetic magnons,
which may appear if the interface has different magnetic properties from the
bulk, gives rise to and contributions to the magnetoresistance and
resistance, respectively, and, iv) Coulomb blockade effects may enhance the
magnetoresistance, when transport is dominated by cotunneling processes.Comment: 5 page
Linear response conductance and magneto-resistance of ferromagnetic single-electron transistors
The current through ferromagnetic single-electron transistors (SET's) is
considered. Using path integrals the linear response conductance is formulated
as a function of the tunnel conductance vs. quantum conductance and the
temperature vs. Coulomb charging energy. The magneto-resistance of
ferromagnet-normal metal-ferromagnet (F-N-F) SET's is almost independent of the
Coulomb charging energy and is only reduced when the transport dwell time is
longer than the spin-flip relaxation time. In all-ferromagnetic (F-F-F) SET's
with negligible spin-flip relaxation time the magneto-resistance is calculated
analytically at high temperatures and numerically at low temperatures. The
F-F-F magneto-resistance is enhanced by higher order tunneling processes at low
temperatures in the 'off' state when the induced charges vanishes. In contrast,
in the 'on' state near resonance the magneto-resistance ratio is a
non-monotonic function of the inverse temperature.Comment: 10 pages, 6 figures. accepted for publication in Phys. Rev.
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