Near-Surface Te+ 125 Spins with Millisecond Coherence Lifetime

Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI Te+125 donors implanted into natural Si at depths as shallow as 20 nm. We show that surface band bending can be used to ionize such near-surface Te to spin-active Te+ state, and that optical illumination can be used further to control the Te donor charge state. We examine spin activation yield, spin linewidth, and relaxation (T1) and coherence times (T2) and show how a zero-field 3.5 GHz "clock transition"extends spin coherence times to over 1 ms, which is about an order of magnitude longer than other near-surface spin systems

Long-lived non-equilibrium superconductivity in a non-centrosymmetric Rashba semiconductor

We report non-equilibrium magnetodynamics in the Rashba-superconductor GeTe, which lacks inversion symmetry in the bulk. We find that at low temperature the system exhibits a non-equilibrium state, which decays on time scales that exceed conventional electronic scattering times by many orders of magnitude. This reveals a non-equilibrium magnetoresponse that is asymmetric under magnetic field reversal and, strikingly, induces a non-equilibrium superconducting state distinct from the equilibrium one. We develop a model of a Rashba system where non-equilibrium configurations relax on a finite timescale which captures the qualitative features of the data. We also obtain evidence for the slow dynamics in another non-superconducting Rashba system. Our work provides novel insights into the dynamics of non-centrosymmetric superconductors and Rashba systems in general

Long-lived nonequilibrium superconductivity in a noncentrosymmetric Rashba semiconductor

We report non-equilibrium magnetodynamics in the Rashba-superconductor GeTe, which lacks inversion symmetry in the bulk. We find that at low temperature the system exhibits a non-equilibrium state, which decays on time scales that exceed conventional electronic scattering times by many orders of magnitude. This reveals a non-equilibrium magnetoresponse that is asymmetric under magnetic field reversal and, strikingly, induces a non-equilibrium superconducting state distinct from the equilibrium one. We develop a model of a Rashba system where non-equilibrium configurations relax on a finite timescale which captures the qualitative features of the data. We also obtain evidence for the slow dynamics in another non-superconducting Rashba system. Our work provides novel insights into the dynamics of non-centrosymmetric superconductors and Rashba systems in general.EPSRC, Royal Society, DF

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3–4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al

Observation of Josephson harmonics in tunnel junctions

Approaches to developing large-scale superconducting quantum processors must cope with the numerous microscopic degrees of freedom that are ubiquitous in solid-state devices. State-of-the-art superconducting qubits employ aluminium oxide (AlO$_x$) tunnel Josephson junctions as the sources of nonlinearity necessary to perform quantum operations. Analyses of these junctions typically assume an idealized, purely sinusoidal current–phase relation. However, this relation is expected to hold only in the limit of vanishingly low-transparency channels in the AlO$_x$ barrier. Here we show that the standard current–phase relation fails to accurately describe the energy spectra of transmon artificial atoms across various samples and laboratories. Instead, a mesoscopic model of tunnelling through an inhomogeneous AlO$_x$ barrier predicts percent-level contributions from higher Josephson harmonics. By including these in the transmon Hamiltonian, we obtain orders of magnitude better agreement between the computed and measured energy spectra. The presence and impact of Josephson harmonics has important implications for developing AlOx-based quantum technologies including quantum computers and parametric amplifiers. As an example, we show that engineered Josephson harmonics can reduce the charge dispersion and associated errors in transmon qubits by an order of magnitude while preserving their anharmonicity

Observation of Josephson Harmonics in Tunnel Junctions

Superconducting quantum processors have a long road ahead to reach fault-tolerant quantum computing. One of the most daunting challenges is taming the numerous microscopic degrees of freedom ubiquitous in solid-state devices. State-of-the-art technologies, including the world's largest quantum processors, employ aluminum oxide (AlO$_x$) tunnel Josephson junctions (JJs) as sources of nonlinearity, assuming an idealized pure $\sin\varphi$ current-phase relation (C$\varphi$R). However, this celebrated $\sin\varphi$ C$\varphi$R is only expected to occur in the limit of vanishingly low-transparency channels in the AlO$_x$ barrier. Here we show that the standard C$\varphi$R fails to accurately describe the energy spectra of transmon artificial atoms across various samples and laboratories. Instead, a mesoscopic model of tunneling through an inhomogeneous AlO$_x$ barrier predicts %-level contributions from higher Josephson harmonics. By including these in the transmon Hamiltonian, we obtain orders of magnitude better agreement between the computed and measured energy spectra. The reality of Josephson harmonics transforms qubit design and prompts a reevaluation of models for quantum gates and readout, parametric amplification and mixing, Floquet qubits, protected Josephson qubits, etc. As an example, we show that engineered Josephson harmonics can reduce the charge dispersion and the associated errors in transmon qubits by an order of magnitude, while preserving anharmonicity

Magnetotransport signatures of three-dimensional topological insulator nanostructures

We study the magnetotransport properties of patterned 3D topological insulator nanostructures with several leads, such as kinks or Y-junctions, near the Dirac point with analytical as well as numerical techniques. The interplay of the nanostructure geometry, the external magnetic field, and the spin-momentum locking of the topological surface states lead to a richer magnetoconductance phenomenology as compared to straight nanowires. Similar to straight wires, a quantized conductance with perfect transmission across the nanostructure can be realized across a kink when the input and output channels are pierced by a half-integer magnetic flux quantum. Unlike for straight wires, there is an additional requirement depending on the orientation of the external magnetic field. A right-angle kink shows a unique π -periodic magnetoconductance signature as a function of the in-plane angle of the magnetic field. For a Y-junction, the transmission can be perfectly steered to either of the two possible output legs by a proper alignment of the external magnetic field. These magnetotransport signatures offer new ways to explore topological surface states and could be relevant for quantum transport experiments on nanostructures which can be realized with existing fabrication methods

TiN nanobridge Josephson junctions and nanoSQUIDs on SiN-buffered Si

We report the fabrication and properties of titanium nitride (TiN) nanobridge Josephson junctions (nJJs) and nanoscale superconducting quantum interference devices (nanoSQUIDs) on SiN-buffered Si substrates. The superior corrosion resistance, large coherence length, suitable superconducting transition temperature and highly selective reactive ion etching (RIE) of TiN compared to e-beam resists and the SiN buffer layer allow for reproducible preparation and result in long-term stability of the TiN nJJs. High-resolution transmission electron microscopy reveals a columnar structure of the TiN film on an amorphous SiN buffer layer. High-resolution scanning electron microscopy reveals the variable thickness shape of the nJJs. A combination of wet etching in 20% potassium hydroxide and RIE is used for bulk nanomachining of nanoSQUID cantilevers. More than 20 oscillations of the V(B) dependence of the nanoSQUIDs with a period of ∼6 mT and hysteresis-free I(V) characteristics (CVCs) of the all-TiN nJJs are observed at 4.2 K. CVCs of the low-Ic all-TiN nJJs follow theoretical predictions for dirty superconductors down to ∼10 mK, with the critical current saturated below ∼0.6 K. These results pave the way for superconducting electronics based on nJJs operating non-hysteretically at 4.2 K, as well as for all-TiN qubits operating at sub-100 mK temperatures

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3–4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al