2,139 research outputs found

    Gate-tunable split Kondo effect in a carbon nanotube quantum dot

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    We show a detailed investigation of the split Kondo effect in a carbon nanotube quantum dot with multiple gate electrodes. It is found that the splitting decreases for increasing magnetic field, to result in a recovered zero-bias Kondo resonance at finite magnetic field. Surprisingly, in the same charge state, but under different gate-configurations, the splitting does not disappear for any value of the magnetic field, but we observe an avoided crossing of two high-conductance lines. We think that our observations can be understood in terms of a two-impurity Kondo effect with two spins coupled antiferromagnetically. The exchange coupling between the two spins can be influenced by a local gate, and the non-recovery of the Kondo resonance for certain gate configurations is explained by the existence of a small antisymmetric contribution to the exchange interaction between the two spins.Comment: 12 pages, 4 figures, published versio

    Fork stamping of pristine carbon nanotubes onto ferromagnetic contacts for spin-valve devices

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    We present a fabrication scheme called 'fork stamping' optimized for the dry transfer of individual pristine carbon nanotubes (CNTs) onto ferromagnetic contact electrodes fabricated by standard lithography. We demonstrate the detailed recipes for a residue-free device fabrication and in-situ current annealing on suspended CNT spin-valve devices with ferromagnetic Permalloy (Py) contacts and report preliminary transport characterization and magnetoresistance experiments at cryogenic temperatures. This scheme can directly be used to implement more complex device structures, including multiple gates or superconducting contacts.Comment: 7 pages, 4 figures, submitted to IWEPNM 2015 conference proceedings (physica status solidi (b)

    Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

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    We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25\% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find {\it two} sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transition between singlet and a triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin-based Bell inequalities.Comment: 7 pages, 6 figure

    Shot noise of a quantum dot measured with GHz stub impedance matching

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    The demand for a fast high-frequency read-out of high impedance devices, such as quantum dots, necessitates impedance matching. Here we use a resonant impedance matching circuit (a stub tuner) realized by on-chip superconducting transmission lines to measure the electronic shot noise of a carbon nanotube quantum dot at a frequency close to 3 GHz in an efficient way. As compared to wide-band detection without impedance matching, the signal to noise ratio can be enhanced by as much as a factor of 800 for a device with an impedance of 100 kΩ\Omega. The advantage of the stub resonator concept is the ease with which the response of the circuit can be predicted, designed and fabricated. We further demonstrate that all relevant matching circuit parameters can reliably be deduced from power reflectance measurements and then used to predict the power transmission function from the device through the circuit. The shot noise of the carbon nanotube quantum dot in the Coulomb blockade regime shows an oscillating suppression below the Schottky value of 2eI2eI, as well an enhancement in specific regions.Comment: 6 pages, 4 figures, supplementar

    Multi-wall carbon nanotubes as quantum dots

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    We have measured the differential conductance dI/dV of individual multi-wall carbon nanotubes (MWNT) of different lengths. A cross-over from wire-like (long tubes) to dot-like (short tubes) behavior is observed. dI/dV is dominated by random conductance fluctuations (UCF) in long MWNT devices (L=2...7 ÎĽm\mu m), while Coulomb blockade and energy level quantization are observed in short ones (L=300 nm). The electron levels of short MWNT dots are nearly four-fold degenerate (including spin) and their evolution in magnetic field (Zeeman splitting) agrees with a g-factor of 2. In zero magnetic field the sequential filling of states evolves with spin S according to S=0 -> 1/2 -> 0... In addition, a Kondo enhancement of the conductance is observed when the number of electrons on the tube is odd.Comment: 10 pages, 4 figure

    Tuning the Josephson current in carbon nanotubes with the Kondo effect

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    We investigate the Josephson current in a single wall carbon nanotube connected to superconducting electrodes. We focus on the parameter regime in which transport is dominated by Kondo physics. A sizeable supercurrent is observed for odd number of electrons on the nanotube when the Kondo temperature Tk is sufficiently large compared to the superconducting gap. On the other hand when, in the center of the Kondo ridge, Tk is slightly smaller than the superconducting gap, the supercurrent is found to be extremely sensitive to the gate voltage Vbg. Whereas it is largely suppressed at the center of the ridge, it shows a sharp increase at a finite value of Vbg. This increase can be attributed to a doublet-singlet transition of the spin state of the nanotube island leading to a pi shift in the current phase relation. This transition is very sensitive to the asymmetry of the contacts and is in good agreement with theoretical predictions.Comment: 5 pages, 4 figure

    Local electrical tuning of the nonlocal signals in a Cooper pair splitter

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    A Cooper pair splitter consists of a central superconducting contact, S, from which electrons are injected into two parallel, spatially separated quantum dots (QDs). This geometry and electron interactions can lead to correlated electrical currents due to the spatial separation of spin-singlet Cooper pairs from S. We present experiments on such a device with a series of bottom gates, which allows for spatially resolved tuning of the tunnel couplings between the QDs and the electrical contacts and between the QDs. Our main findings are gate-induced transitions between positive conductance correlation in the QDs due to Cooper pair splitting and negative correlations due to QD dynamics. Using a semi-classical rate equation model we show that the experimental findings are consistent with in-situ electrical tuning of the local and nonlocal quantum transport processes. In particular, we illustrate how the competition between Cooper pair splitting and local processes can be optimized in such hybrid nanostructures.Comment: 9 pages, 6 figures, 2 table

    Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

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    We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependent gating in solution with nanosecond time resolution.Comment: 14 pages, 4 figure

    Strong Pinning and Plastic Deformations of the Vortex Lattice

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    We investigate numerically the dynamically generated plastic deformations of a 3D vortex lattice (VL) driven through a disorder potential with isolated, strong pinning centers (point-like or extended along the field direction). We find that the VL exhibits a very peculiar dynamical behavior in the plastic flow regime, in particular, topological excitations consisting of three or four entangled vortices are formed. We determine the critical current density jcj_c and the activation energy for depinning UcU_c in the presence of a finite density of strong pinning centers.Comment: 12 pages, TeX type, Postscript figure

    Magnetic field tuning and quantum interference in a Cooper pair splitter

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    Cooper pair splitting (CPS) is a process in which the electrons of naturally occurring spin-singlet pairs in a superconductor are spatially separated using two quantum dots. Here we investigate the evolution of the conductance correlations in an InAs CPS device in the presence of an external magnetic field. In our experiments the gate dependence of the signal that depends on both quantum dots continuously evolves from a slightly asymmetric Lorentzian to a strongly asymmetric Fano-type resonance with increasing field. These experiments can be understood in a simple three - site model, which shows that the nonlocal CPS leads to symmetric line shapes, while the local transport processes can exhibit an asymmetric shape due to quantum interference. These findings demonstrate that the electrons from a Cooper pair splitter can propagate coherently after their emission from the superconductor and how a magnetic field can be used to optimize the performance of a CPS device. In addition, the model calculations suggest that the estimate of the CPS efficiency in the experiments is a lower bound for the actual efficiency.Comment: 5 pages + 4 pages supplementary informatio
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