175 research outputs found
Ultra-dense phosphorus in germanium delta-doped layers
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in
ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat
clean Ge(001) surface followed by thermal incorporation of P into the lattice
and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and
electrical characterizations show that P atoms are confined, with minimal
diffusion, into an ultra-narrow 2-nm-wide layer with an electrically-active
sheet carrier concentration of 4x10^13 cm-2 at 4.2 K. These results open up the
possibility of ultra-narrow source/drain regions with unprecedented carrier
densities for Ge n-channel field effect transistors
Influence of encapsulation temperature on Ge:P delta-doped layers
We present a systematic study of the influence of the encapsulation
temperature on dopant confinement and electrical properties of Ge:P delta-doped
layers. For increasing growth temperature we observe an enhancement of the
electrical properties accompanied by an increased segregation of the
phosphorous donors, resulting in a slight broadening of the delta-layer. We
demonstrate that a step-flow growth achieved at 530 C provides the best
compromise between high crystal quality and minimal dopant redistribution, with
an electron mobility ~ 128 cm^2/Vs at a carrier density 1.3x10^14 cm-2, and a
4.2 K phase coherence length of ~ 180 nm.Comment: Phys. Rev. B, in press (2009
Light effective hole mass in undoped Ge/SiGe quantum wells
We report density-dependent effective hole mass measurements in undoped
germanium quantum wells. We are able to span a large range of densities
( cm) in top-gated field effect transistors by
positioning the strained buried Ge channel at different depths of 12 and 44 nm
from the surface. From the thermal damping of the amplitude of Shubnikov-de
Haas oscillations, we measure a light mass of at a density of
cm. We confirm the theoretically predicted dependence
of increasing mass with density and by extrapolation we find an effective mass
of at zero density, the lightest effective mass for a planar
platform that demonstrated spin qubits in quantum dots
Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium
We report experimental evidence of a remarkable spontaneous time reversal
symmetry breaking in two dimensional electron systems formed by atomically
confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si)
and germanium (Ge). Weak localization corrections to the conductivity and the
universal conductance fluctuations were both found to decrease rapidly with
decreasing doping in the Si:P and Ge:P layers, suggesting an effect
driven by Coulomb interactions. In-plane magnetotransport measurements indicate
the presence of intrinsic local spin fluctuations at low doping, providing a
microscopic mechanism for spontaneous lifting of the time reversal symmetry.
Our experiments suggest the emergence of a new many-body quantum state when two
dimensional electrons are confined to narrow half-filled impurity bands
Strong spin-photon coupling in silicon
We report the strong coupling of a single electron spin and a single
microwave photon. The electron spin is trapped in a silicon double quantum dot
and the microwave photon is stored in an on-chip high-impedance superconducting
resonator. The electric field component of the cavity photon couples directly
to the charge dipole of the electron in the double dot, and indirectly to the
electron spin, through a strong local magnetic field gradient from a nearby
micromagnet. This result opens the way to the realization of large networks of
quantum dot based spin qubit registers, removing a major roadblock to scalable
quantum computing with spin qubits
Low field magnetotransport in strained Si/SiGe cavities
Low field magnetotransport revealing signatures of ballistic transport
effects in strained Si/SiGe cavities is investigated. We fabricated strained
Si/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowire
geometry defined by electron-beam lithography and reactive ion etching. The
main features observed in the low temperature magnetoresistance curves are the
presence of a zero-field magnetoresistance peak and of an oscillatory structure
at low fields. By adopting a simple geometrical model we explain the
oscillatory structure in terms of electron magnetic focusing. A detailed
examination of the zero-field peak lineshape clearly shows deviations from the
predictions of ballistic weak localization theory.Comment: Submitted to Physical Review B, 25 pages, 7 figure
Conductance quantization in etched Si/SiGe quantum point contacts
We fabricated strongly confined Schottky-gated quantum point contacts by
etching Si/SiGe heterostructures and observed intriguing conductance
quantization in units of approximately 1e2/h. Non-linear conductance
measurements were performed depleting the quantum point contacts at fixed
mode-energy separation. We report evidences of the formation of a half 1e2/h
plateau, supporting the speculation that adiabatic transmission occurs through
1D modes with complete removal of valley and spin degeneracies.Comment: to appear in Physical Review
Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
Buried-channel semiconductor heterostructures are an archetype material
platform to fabricate gated semiconductor quantum devices. Sharp confinement
potential is obtained by positioning the channel near the surface, however
nearby surface states degrade the electrical properties of the starting
material. In this paper we demonstrate a two-dimensional hole gas of high
mobility ( cm/Vs) in a very shallow strained germanium
channel, which is located only 22 nm below the surface. This high mobility
leads to mean free paths , setting new benchmarks for holes in
shallow FET devices. Carriers are confined in an undoped Ge/SiGe
heterostructure with reduced background contamination, sharp interfaces, and
high uniformity. The top-gate of a dopant-less field effect transistor controls
the carrier density in the channel. The high mobility, along with a percolation
density of , light effective mass (0.09
m), and high g-factor (up to ) highlight the potential of undoped
Ge/SiGe as a low-disorder material platform for hybrid quantum technologies
Bottom-up assembly of metallic germanium
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (1019 to 1020 cm-3) low-resistivity (10-4Ω ∙ cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory
- …