Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large resistivity of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.Comment: 14 pages, 6 figures. Accepted in 2D Materials. https://doi.org/10.1088/2053-1583/aa882

Spin Pumping and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces

Through combined ferromagnetic resonance, spin-pumping and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $\theta_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic damping and the spin Hall effect induced voltage.Comment: 6 pages, 3 figures (main text) and 8 pages supplementary. Published with small modifications in Phys. Rev. Let

Pinning of domain walls in thin ferromagnetic films

We present a quantitative investigation of magnetic domain-wall pinning in thin magnets with perpendicular anisotropy. A self-consistent description exploiting the universal features of the depinning and thermally activated subthreshold creep regimes observed in the field-driven domain-wall velocity is used to determine the effective pinning parameters controlling the domain-wall dynamics: The effective height of pinning barriers, the depinning threshold, and the velocity at depinning. Within this framework, the analysis of results published in the literature allows for a quantitative comparison of pinning properties for a set of magnetic materials in a wide temperature range. On the basis of scaling arguments, the microscopic parameters controlling the pinning: The correlation length of pinning, the collectively pinned domain-wall length (Larkin length), and the strength of pinning disorder are estimated from the effective pinning and the micromagnetic parameters. The analysis of thermal effects reveals a crossover between different pinning length scales and strengths at low reduced temperatures.Fil: Jeudy, V.. Université Paris Sud; Francia. Centre D'etudes de Saclay; Francia. Centre National de la Recherche Scientifique; FranciaFil: Díaz Pardo, R.. Université Paris Sud; Francia. Centre D'etudes de Saclay; Francia. Centre National de la Recherche Scientifique; FranciaFil: Savero Torres, W.. Université Paris Sud; Francia. Centre D'etudes de Saclay; Francia. Centre National de la Recherche Scientifique; FranciaFil: Bustingorry, Sebastián. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Kolton, Alejandro Benedykt. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentin

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity and small induced damping, this AuW alloy may find applications in the nearest future

Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperature

Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfacing graphene with a semiconducting transition metal dechalcogenide, such as tungsten disulphide (WS$_2$). Signatures of such an enhancement have recently been reported but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and WS$_2$. By using out-of-plane spin precession, we show that the spin lifetime is largest when the spins point out of the graphene plane. Moreover, we observe that the spin lifetime varies over one order of magnitude depending on the spin orientation, indicating that the strong spin-valley coupling in WS$_2$ is imprinted in the bilayer and felt by the propagating spins. These findings provide a rich platform to explore coupled spin-valley phenomena and offer novel spin manipulation strategies based on spin relaxation anisotropy in two-dimensional materials

Switchable Spin-Current Source Controlled by Magnetic Domain Walls

International audienc

Magnetism, spin dynamics, and quantum transport in two-dimensional systems

International audienc

Universal depinning transition of domain walls in ultrathin ferromagnets

We present a quantitative and comparative study of magnetic-field-driven domain-wall depinning transition in different ferromagnetic ultrathin films over a wide range of temperature. We reveal a universal scaling function accounting for both drive and thermal effects on the depinning transition, including critical exponents. The consistent description we obtain for both the depinning and subthreshold thermally activated creep motion should shed light on the universal glassy dynamics of thermally fluctuating elastic objects pinned by disordered energy landscapes.Fil: Diaz Pardo, R.. Université Paris Sud; Francia. Centre National de la Recherche Scientifique; FranciaFil: Savero Torres, W.. Université Paris Sud; Francia. Centre National de la Recherche Scientifique; FranciaFil: Kolton, Alejandro Benedykt. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaFil: Bustingorry, Sebastián. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaFil: Jeudy, V.. Université Paris Sud; Francia. Centre National de la Recherche Scientifique; Franci