Electrochemical etching of AlGaN for the realization of thin-film devices

Heterogeneously integrated AlGaN epitaxial layers will be essential for future optical and electrical devices like thin-film flip-chip ultraviolet (UV) light-emitting diodes, UV vertical-cavity surface-emitting lasers, and high-electron mobility transistors on efficient heat sinks. Such AlGaN-membranes will also enable flexible and micromechanical devices. However, to develop a method to separate the AlGaN-device membranes from the substrate has proven to be challenging, in particular, for high-quality device materials, which require the use of a lattice-matched AlGaN sacrificial layer. We demonstrate an electrochemical etching method by which it is possible to achieve complete lateral etching of an AlGaN sacrificial layer with up to 50% Al-content. The influence of etching voltage and the Al-content of the sacrificial layer on the etching process is investigated. The etched N-polar surface shows the same macroscopic topography as that of the as-grown epitaxial structure, and the root-mean square roughness is 3.5 nm for 1 \ub5m x 1 \ub5m scan areas. Separated device layers have a well-defined thickness and smooth etched surfaces. Transferred multi-quantum-well structures were fabricated and investigated by time-resolved photoluminescence measurements. The quantum wells showed no sign of degradation caused by the thin-film process

Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth

Producción CientíficaWe fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method.Ministerio de Economía, Industria y Competitividad (Proyect ENE2014-56069-C4-4-R)Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. Project VA081U16)Swedish Energy Agency and SOLAR-ERA.NET (program 40176-1),Swedish Research Council through Linné Excellence Center ADOP

Photon Walk in Transparent Wood: Scattering and Absorption in Hierarchically Structured Materials

The optical response of hierarchical materials is convoluted, which hinders their direct study and property control. Transparent wood (TW) is an emerging biocomposite in this category, which adds optical function to the structural properties of wood. Nano- and microscale inhomogeneities in composition, structure and at interfaces strongly affect light transmission and haze. While interface manipulation can tailor TW properties, the realization of optically clear wood requires detailed understanding of light-TW interaction mechanisms. Here we show how material scattering and absorption coefficients can be extracted from a combination of experimental spectroscopic measurements and a photon diffusion model. Contributions from different length scales can thus be deciphered and quantified. It is shown that forward scattering dominates haze in TW, primarily caused by refractive index mismatch between the wood substrate and the polymer phase. Rayleigh scattering from the wood cell wall and absorption from residual lignin have minor effects on transmittance, but the former affects haze. Results provide guidance for material design of transparent hierarchical composites towards desired optical functionality; we demonstrate experimentally how transmittance and haze of TW can be controlled over a broad range.QC 20220125</p

Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs

By studying low radiative efficiency blue III-nitride light emitting diodes (LEDs), we find that the ABC model of recombination commonly used for understanding efficiency behavior in LEDs is insufficient and that additional effects should be taken into account. We propose a modification to the standard recombination model by incorporating a bimolecular nonradiative term. The modified model is shown to be in much better agreement with the radiative efficiency data and to be more consistent than the conventional model with very short carrier lifetimes measured by time-resolved photoluminescence in similar, low radiative efficiency material. We present experimental evidence that a hot carrier-generating process is occurring within these devices, in the form of measurements of forward photocurrent under forward bias. The forward photocurrent, due to hot carrier generation in the active region, is present despite the lack of any "efficiency droop"-the usual signature of band-to-band Auger recombination in high-quality III-nitride LEDs. Hot carrier generation in the absence of band-to-band Auger recombination implies that some other source of hot carriers exists within these low radiative efficiency devices, such as trap-assisted Auger recombination