Born or Made? An Overview of the Social Status and Professional Training of Hungarian Interpreters in Romania

Abstract There is a recurrent debate in the scholarly literature on interpreting studies: are interpreters made or bom? While classical interpreting schools state that great interpreters are bom and that formation and development is of a secondary importance, the newest publications on this topic place a much greater stress on the formation and development of interpreting abilities, skills, and competences. The latest results also challenge several ideas and stereotypes concerning the personality and attitudes of interpreters. This article outlines the position and situation regarding Hungarian interpreters in Romania with a special regard to the legal framework, and to the present state of professional training. The study also discusses why interpreters of Hungarian are much more likely to be bom in Romania, and not made, (a factor that hinders the professionalization of Hungarian interpreters in Romania). Equally significant are the legislative loopholes which enable untrained individuals to perform interpreting activities (even economic activities), the result of which is a significantly poorer image of the profession, and a lowering of the quality of work it produces. We also give a short overview of the translation and interpreting programmes. As the majority of the Hungarian population in Romania reside in Transylvania, we confine our overview to Transylvanian universities.</jats:p

Bevezetés a tolmácsolás elméletébe

A kötet elsősorban a Sapientia EMTE fordító és tolmács szakos hallgatói számára nyújt betekintést a tolmácsolás elméletébe, néhány gyakorlati szempont érintésével. Kitér a tolmácsolás történetére, tipológiáira, fajtáira, a szakterületen alkalmazható információs technológiai fejlesztésekre, ugyanakkor lélektani-kognitív szempontokat is felvillant a tolmács személyiségjegyeivel és kompetenciáival kapcsolatban. Tekintve, hogy a szerzők az említett témakörök tárgyalása során a romániai „fordításpiac” jellegzetességeit is figyelembe veszik, a könyv nemcsak a hallgatók, hanem a gyakorló tolmácsok számára is hasznos tanácsokkal szolgálhat

Born or Made? An Overview of the Social Status and Professional Training of Hungarian Interpreters in Romania

There is a recurrent debate in the scholarly literature on interpreting studies: are interpreters made or bom? While classical interpreting schools state that great interpreters are bom and that formation and development is of a secondary importance, the newest publications on this topic place a much greater stress on the formation and development of interpreting abilities, skills, and competences. The latest results also challenge several ideas and stereotypes concerning the personality and attitudes of interpreters. This article outlines the position and situation regarding Hungarian interpreters in Romania with a special regard to the legal framework, and to the present state of professional training. The study also discusses why interpreters of Hungarian are much more likely to be bom in Romania, and not made, (a factor that hinders the professionalization of Hungarian interpreters in Romania). Equally significant are the legislative loopholes which enable untrained individuals to perform interpreting activities (even economic activities), the result of which is a significantly poorer image of the profession, and a lowering of the quality of work it produces. We also give a short overview of the translation and interpreting programmes. As the majority of the Hungarian population in Romania reside in Transylvania, we confine our overview to Transylvanian universities

Exciton Dynamics in MoS2-Pentacene and WSe2-Pentacene Heterojunctions

We measured the exciton dynamics in van der Waals heterojunctions of transition metal dichalcogenides (TMDCs) and organic semiconductors (OSs). TMDCs and OSs are semiconducting materials with rich and highly diverse optical and electronic properties. Their heterostructures, exhibiting van der Waals bonding at their interfaces, can be utilized in the field of optoelectronics and photovoltaics. Two types of heterojunctions, MoS2-pentacene and WSe2-pentacene, were prepared by layer transfer of 20 nm pentacene thin films as well as MoS2and WSe2monolayer crystals onto Au surfaces. The samples were studied by means of transient absorption spectroscopy in the reflectance mode. We found that A-exciton decay by hole transfer from MoS2to pentacene occurs with a characteristic time of 21 ± 3 ps. This is slow compared to previously reported hole transfer times of 6.7 ps in MoS2-pentacene junctions formed by vapor deposition of pentacene molecules onto MoS2on SiO2. The B-exciton decay in WSe2shows faster hole transfer rates for WSe2-pentacene heterojunctions, with a characteristic time of 7 ± 1 ps. The A-exciton in WSe2also decays faster due to the presence of a pentacene overlayer; however, fitting the decay traces did not allow for the unambiguous assignment of the associated decay time. Our work provides important insights into excitonic dynamics in the growing field of TMDC-OS heterojunctions

Exciton Dynamics in MoS₂‑Pentacene and WSe₂‑Pentacene Heterojunctions

We measured the exciton dynamics in van der Waals heterojunctions of transition metal dichalcogenides (TMDCs) and organic semiconductors (OSs). TMDCs and OSs are semiconducting materials with rich and highly diverse optical and electronic properties. Their heterostructures, exhibiting van der Waals bonding at their interfaces, can be utilized in the field of optoelectronics and photovoltaics. Two types of heterojunctions, MoS2-pentacene and WSe2-pentacene, were prepared by layer transfer of 20 nm pentacene thin films as well as MoS2 and WSe2 monolayer crystals onto Au surfaces. The samples were studied by means of transient absorption spectroscopy in the reflectance mode. We found that A-exciton decay by hole transfer from MoS2 to pentacene occurs with a characteristic time of 21 ± 3 ps. This is slow compared to previously reported hole transfer times of 6.7 ps in MoS2-pentacene junctions formed by vapor deposition of pentacene molecules onto MoS2 on SiO2. The B-exciton decay in WSe2 shows faster hole transfer rates for WSe2-pentacene heterojunctions, with a characteristic time of 7 ± 1 ps. The A-exciton in WSe2 also decays faster due to the presence of a pentacene overlayer; however, fitting the decay traces did not allow for the unambiguous assignment of the associated decay time. Our work provides important insights into excitonic dynamics in the growing field of TMDC-OS heterojunctions