5 research outputs found
Electrochemical properties of CVD grown pristine graphene: monolayer- vs. quasi-graphene
We report the electrochemical properties of pristine monolayer, double layer and few-layer (termed quasi-)
graphene grown via CVD and transferred using PMMA onto an insulating substrate (silicon dioxide wafers).
Characterisation has been performed by Raman spectroscopy, optical spectroscopy, Atomic Force
Microscopy and X-ray Photoelectron Spectroscopy, revealing ‘true’ pristine single-layer graphene (O/C
of 0.05) at the former and pristine quasi-graphene at the latter (O/C of 0.07); the term “quasi-graphene”
is coined due to the surface comprising on average 4-graphene-layers. The graphene electrodes are
electrochemically characterised using both inner-sphere and outer-sphere redox probes with
electrochemical performances of the graphene electrodes compared to other available graphitic
electrodes, namely that of basal- and edge- plane pyrolytic graphite electrodes constructed from Highly
Ordered Pyrolytic Graphite (HOPG), with information on heterogeneous rate constants (ko) obtained.
The electrochemical rate constants are predominantly influenced by the electronic properties of the
graphene surfaces. Monolayer graphene is found to exhibit slow heterogeneous electron transfer (HET)
kinetics towards the redox probes studied, with HET rates ca. 2 and 8 times faster at quasi-graphene and
HOPG respectively, relative to that of the monolayer graphene electrode. Critically contrasting the
performance of monolayer graphene to quasi-graphene and HOPG electrodes reveals that increasing
the number of graphene layers results in improved electrochemical properties, where in terms of the
electrochemical reversibility of the probes studied: monolayer-graphene < quasi-graphene < HOPG, as
governed by the respective HET electrochemical rate constants. Given that edge plane sites are the
predominant origin of fast electron transfer kinetics at graphitic materials, the slow HET rates at pristine
single-layer graphene electrodes are likely due to graphene’s fundamental geometry, which comprises a
small edge plane and large basal plane contribution. In the case of quasi-graphene and HOPG, they
possess increasing global coverage of electrochemically reactive edge plane sites (respectively) and thus
exhibit superior electrochemical performances over that of monolayer graphene. Last, the case of a
double-layer graphene electrode is considered, which as a result of its fabrication possesses a large
global coverage of edge plane like- sites/defects. In agreement with the former conclusions, the doublelayered
defect-graphene electrode is found to exhibit fast/favourable electrochemical properties, which
is attributed to its large edge plane content (i.e. defect abundant graphene) and thus is further evidence
that the electrochemical response is dependent on the density of edge plane sites at graphene based
electrodes (influenced by the coverage of graphene-defects and the number of graphene layers)
Epigenetic regulator genes direct lineage switching in MLL/AF4 leukaemia
The fusion gene MLL/AF4 defines a high-risk subtype of pro-B acute lymphoblastic leukaemia. Relapse can be associated with a lineage switch from acute lymphoblastic to acute myeloid leukaemia resulting in poor clinical outcomes due to resistance towards chemo- and immuno-therapies. Here we show that the myeloid relapses share oncogene fusion breakpoints with their matched lymphoid presentations and can originate from varying differentiation stages from immature progenitors through to committed B-cell precursors. Lineage switching is linked to substantial changes in chromatin accessibility and rewiring of transcriptional programmes, including alternative splicing. These findings indicate that the execution and maintenance of lymphoid lineage differentiation is impaired. The relapsed myeloid phenotype is recurrently associated with the altered expression, splicing or mutation of chromatin modifiers, including CHD4 coding for the ATPase/helicase of the nucleosome remodelling and deacetylation complex, NuRD. Perturbation of CHD4 alone or in combination with other mutated epigenetic modifiers induces myeloid gene expression in MLL/AF4-positive cell models indicating that lineage switching in MLL/AF4 leukaemia is driven and maintained by disrupted epigenetic regulation
Epigenetic regulator genes direct lineage switching in MLL/AF4 leukaemia
The fusion gene MLL/AF4 defines a high-risk subtype of pro-B acute lymphoblastic leukaemia. Relapse can be associated with a lineage switch from acute lymphoblastic to acute myeloid leukaemia resulting in poor clinical outcomes due to resistance towards chemo- and immuno-therapies. Here we show that the myeloid relapses share oncogene fusion breakpoints with their matched lymphoid presentations and can originate from varying differentiation stages from immature progenitors through to committed B-cell precursors. Lineage switching is linked to substantial changes in chromatin accessibility and rewiring of transcriptional programmes, including alternative splicing. These findings indicate that the execution and maintenance of lymphoid lineage differentiation is impaired. The relapsed myeloid phenotype is recurrently associated with the altered expression, splicing or mutation of chromatin modifiers, including CHD4 coding for the ATPase/helicase of the nucleosome remodelling and deacetylation complex, NuRD. Perturbation of CHD4 alone or in combination with other mutated epigenetic modifiers induces myeloid gene expression in MLL/AF4-positive cell models indicating that lineage switching in MLL/AF4 leukaemia is driven and maintained by disrupted epigenetic regulation