Using an on-line image analysis technique to characterize sucrose crystal morphology during a crystallization run

The morphological forms and habits of crystals and agglomeration are important properties on crystallization processes. Online techniques for realtime measurement of these properties are mandatory for a better comprehension of crystal growth phenomenon. The present paper presents and describes a new online method to determine the complexity level of a crystal or a population of crystals during a crystallization process. An image analysis technique is combined with discriminant factorial analysis leading to results that allow the computation of the complexity of crystals through the parameter agglomeration degree of crystals. With this methodology, it has been possible to distinguish online and automatically among three different classes of crystals according to their complexity. It further describes the application of such methodology on the study of CaCl2, D-fructose, and D-glucose influence on the crystallization of sucrose, namely, on crystal size, morphology, and complexity. The effect of supersaturation, growth rate, and impurity concentration on the type, amount, and complexity level of the agglomerates was determined at different temperatures. The combination of image analysis and kinetic results allowed to understand better the crystallization phenomena in the presence and absence of impurities. The image analysis results suggest the possible application of this tool for process control, optimizing, by this way, laboratory and industrial crystallizers.This work was supported by Fundacao para a Ciencia e Tecnologia under program contract numbers SFRH/BD/11315/2002 and SFRH/BPD/45637/2008

Crystallisation route map

A route map for the assessment of crystallisation processes is presented. A theoretical background on solubility, meta-stable zone width, nucleation and crystal growth kinetics is presented with practical examples. The concepts of crystallisation hydrodynamics and the application of population balances and computational fluid dynamics for modelling crystallisation processes and their scaling up are also covered

Efficient perovskite solar cells by metal ion doping

Realizing the theoretical limiting power conversion efficiency (PCE) in perovskite solar cells requires a better understanding and control over the fundamental loss processes occurring in the bulk of the perovskite layer and at the internal semiconductor interfaces in devices. One of the main challenges is to eliminate the presence of charge recombination centres throughout the film which have been observed to be most densely located at regions near the grain boundaries. Here, we introduce aluminium acetylacetonate to the perovskite precursor solution, which improves the crystal quality by reducing the microstrain in the polycrystalline film. At the same time, we achieve a reduction in the non-radiative recombination rate, a remarkable improvement in the photoluminescence quantum efficiency (PLQE) and a reduction in the electronic disorder deduced from an Urbach energy of only 12.6 meV in complete devices. As a result, we demonstrate a PCE of 19.1% with negligible hysteresis in planar heterojunction solar cells comprising all organic p and n-type charge collection layers. Our work shows that an additional level of control of perovskite thin film quality is possible via impurity cation doping, and further demonstrates the continuing importance of improving the electronic quality of the perovskite absorber and the nature of the heterojunctions to further improve the solar cell performance

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

This is an Open Access article distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H2 proportion further increases, stress relaxation and H2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.Peer reviewe