Spectrally tunable ultrashort monochromatized extreme ultraviolet pulses at 100 kHz

We present the experimental realization of spectrally tunable, ultrashort, quasimonochromatic extreme ultraviolet (XUV) pulses generated at 100 kHz repetition rate in a user-oriented gas high harmonic generation (GHHG) beamline of the Extreme Light Infrastructure - Attosecond Light Pulse Source (ELI ALPS) facility. Versatile spectral and temporal shaping of the XUV pulses are accomplished with a double-grating, time-delay compensated monochromator accommodating the two composing stages in a novel, asymmetrical geometry. This configuration supports the achievement of high monochromatic XUV flux (2.8e10+/-0.9e10 photons/s) combined with ultrashort pulse duration (4.0+/-0.2 fs using 12.1+/-0.6 fs driving pulses) and small spot size (sub-100 um). Focusability, spectral bandwidth, and overall photon flux of the produced radiation were investigated covering a wide range of instrumental configurations. Moreover, complete temporal (intensity and phase) characterization of the few-femtosecond monochromatic XUV pulses - a goal that is difficult to achieve by conventional reconstruction techniques - has been realized using ptychographic algorithm on experimentally recorded XUV-IR pump-probe traces. The presented results contribute to in-situ, time-resolved experiments accessing direct information on the electronic structure dynamics of novel target materials.Comment: 20 pages, 8 figure

Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers

We present an extensive analysis of the physical mechanisms responsible for the degradation of 1.3-μm InAs quantum dot lasers epitaxially grown on Si, for application in silicon photonics. For the first time, we characterize the degradation of the devices by combined electro-optical measurements, electroluminescence spectra, and current-voltage analysis. We demonstrate the following original results: when submitted to a current step-stress experiment: 1) QD lasers show a measurable increase in threshold current, which is correlated to a decrease in slope efficiency; 2) the degradation process is stronger, when devices are stressed at current higher than 200 mA, i.e., in the stress regime, where both ground-state and excited-state emission are present; and 3) in the same range of stress currents, an increase in the defect-related current components is also detected, along with a slight decrease in the series resistance. Based on the experimental evidence collected within this paper, the degradation of QD lasers is ascribed to a recombination-enhanced defect reaction (REDR) process, activated by the escape of electrons out of the quantum dots

Investigation of Current-Driven Degradation of 1.3 μ m Quantum-Dot Lasers Epitaxially Grown on Silicon

This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechanisms responsible for the optical degradation. More specifically, the samples (i) exhibited a gradual increase in threshold current, well correlated with (ii) a decrease in sub-threshold emission, and (iii) a decrease in slope efficiency. These variations were found to be compatible with a diffusion process involving the propagation of defects toward the active region of the device and the subsequent decrease in injection efficiency. This hypothesis was also supported by the increase in the defect-related current conduction components exhibited by the electrical characteristics, and highlights the role of defects in the gradual degradation of InAs quantum dot laser diodes. Electroluminescence measurements were used to provide further insight in the degradation process

Characterization of the high harmonics source for the VUV ellipsometer at ELI Beamlines

In this paper, the authors present the characterization experiments of a 20 fs vacuum ultraviolet beam from a high harmonic generation source. The beam hits a silicon sample and passes a triple reflection gold polarizer located inside an ultrahigh vacuum chamber. The polarizer’s Malus curve was obtained; the total acquisition time for each point of the curve was 30 s. This aims to be the first vacuum ultraviolet time-resolved user station dedicated to ellipsometry. The high harmonic beam is generated by a 12 mJ, 1 kHz, 20 fs, in-house-developed laser and detected by a back-illuminated charge-coupled device.