Elaboración de una asignatura a distancia— Contaminación Electromagnética Medioambiental— bajo el marco del Espacio Europeo de Educación Superior

The most important change that the Spanish university will tackle is the changes related with the European Higher Education Area (EHEA). This will imply changes in old concepts as credits evaluating the work of the teachers. In the future, the subjects have to be implemented with the aim of evaluating the total volume of work for the students. Also the relationship between the (EHEA) and the new communication technologies is a challenge for the teachers. In this communication the development of a subject titled “Environmental Electromagnetic Contamination” under the EHEA using internet is presented

Fault Modeling of Graphene Nanoribbon FET Logic Circuits

[EN] Due to the increasing defect rates in highly scaled complementary metal-oxide-semiconductor (CMOS) devices, and the emergence of alternative nanotechnology devices, reliability challenges are of growing importance. Understanding and controlling the fault mechanisms associated with new materials and structures for both transistors and interconnection is a key issue in novel nanodevices. The graphene nanoribbon field-effect transistor (GNR FET) has revealed itself as a promising technology to design emerging research logic circuits, because of its outstanding potential speed and power properties. This work presents a study of fault causes, mechanisms, and models at the device level, as well as their impact on logic circuits based on GNR FETs. From a literature review of fault causes and mechanisms, fault propagation was analyzed, and fault models were derived for device and logic circuit levels. This study may be helpful for the prevention of faults in the design process of graphene nanodevices. In addition, it can help in the design and evaluation of defect- and fault-tolerant nanoarchitectures based on graphene circuits. Results are compared with other emerging devices, such as carbon nanotube (CNT) FET and nanowire (NW) FET.This work was supported in part by the Spanish Government under the research project TIN2016-81075-R and by Primeros Proyectos de Investigacion (PAID-06-18), Vicerrectorado de Investigacion, Innovacion y Transferencia de la Universitat Politecnica de Valencia (UPV), under the project 200190032.Gil Tomás, DA.; Gracia-Morán, J.; Saiz-Adalid, L.; Gil, P. (2019). Fault Modeling of Graphene Nanoribbon FET Logic Circuits. Electronics. 8(8):1-18. https://doi.org/10.3390/electronics8080851S11888International Technology Roadmap for Semiconductors (ITRS) 2013http://www.itrs2.net/2013-itrs.htmlSchuegraf, K., Abraham, M. C., Brand, A., Naik, M., & Thakur, R. (2013). Semiconductor Logic Technology Innovation to Achieve Sub-10 nm Manufacturing. IEEE Journal of the Electron Devices Society, 1(3), 66-75. doi:10.1109/jeds.2013.2271582International Technology Roadmap for Semiconductors (ITRS) 2015https://bit.ly/2xiiT8PNovoselov, K. S. (2004). Electric Field Effect in Atomically Thin Carbon Films. Science, 306(5696), 666-669. doi:10.1126/science.1102896Geim, A. K., & Novoselov, K. S. (2007). The rise of graphene. Nature Materials, 6(3), 183-191. doi:10.1038/nmat1849Wu, Y., Farmer, D. B., Xia, F., & Avouris, P. (2013). Graphene Electronics: Materials, Devices, and Circuits. Proceedings of the IEEE, 101(7), 1620-1637. doi:10.1109/jproc.2013.2260311Choudhury, M. R., Youngki Yoon, Jing Guo, & Mohanram, K. (2011). Graphene Nanoribbon FETs: Technology Exploration for Performance and Reliability. IEEE Transactions on Nanotechnology, 10(4), 727-736. doi:10.1109/tnano.2010.2073718Avouris, P. (2010). Graphene: Electronic and Photonic Properties and Devices. Nano Letters, 10(11), 4285-4294. doi:10.1021/nl102824hBanadaki, Y. M., & Srivastava, A. (2015). Scaling Effects on Static Metrics and Switching Attributes of Graphene Nanoribbon FET for Emerging Technology. IEEE Transactions on Emerging Topics in Computing, 3(4), 458-469. doi:10.1109/tetc.2015.2445104Avouris, P., Chen, Z., & Perebeinos, V. (2007). Carbon-based electronics. Nature Nanotechnology, 2(10), 605-615. doi:10.1038/nnano.2007.300Banerjee, S. K., Register, L. F., Tutuc, E., Basu, D., Kim, S., Reddy, D., & MacDonald, A. H. (2010). Graphene for CMOS and Beyond CMOS Applications. Proceedings of the IEEE, 98(12), 2032-2046. doi:10.1109/jproc.2010.2064151Schwierz, F. (2013). Graphene Transistors: Status, Prospects, and Problems. Proceedings of the IEEE, 101(7), 1567-1584. doi:10.1109/jproc.2013.2257633Fregonese, S., Magallo, M., Maneux, C., Happy, H., & Zimmer, T. (2013). Scalable Electrical Compact Modeling for Graphene FET Transistors. IEEE Transactions on Nanotechnology, 12(4), 539-546. doi:10.1109/tnano.2013.2257832Chen, Y.-Y., Sangai, A., Rogachev, A., Gholipour, M., Iannaccone, G., Fiori, G., & Chen, D. (2015). A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation. IEEE Transactions on Nanotechnology, 14(6), 1068-1082. doi:10.1109/tnano.2015.2469647Ferrari, A. C., Bonaccorso, F., Fal’ko, V., Novoselov, K. S., Roche, S., Bøggild, P., … Pugno, N. (2015). Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. Nanoscale, 7(11), 4598-4810. doi:10.1039/c4nr01600aHong, A. J., Song, E. B., Yu, H. S., Allen, M. J., Kim, J., Fowler, J. D., … Wang, K. L. (2011). Graphene Flash Memory. ACS Nano, 5(10), 7812-7817. doi:10.1021/nn201809kJeng, S.-L., Lu, J.-C., & Wang, K. (2007). A Review of Reliability Research on Nanotechnology. IEEE Transactions on Reliability, 56(3), 401-410. doi:10.1109/tr.2007.903188Srinivasu, B., & Sridharan, K. (2017). A Transistor-Level Probabilistic Approach for Reliability Analysis of Arithmetic Circuits With Applications to Emerging Technologies. IEEE Transactions on Reliability, 66(2), 440-457. doi:10.1109/tr.2016.2642168Teixeira Franco, D., Naviner, J.-F., & Naviner, L. (2006). Yield and reliability issues in nanoelectronic technologies. annals of telecommunications - annales des télécommunications, 61(11-12), 1422-1457. doi:10.1007/bf03219903Lin, Y.-M., Jenkins, K. A., Valdes-Garcia, A., Small, J. P., Farmer, D. B., & Avouris, P. (2009). Operation of Graphene Transistors at Gigahertz Frequencies. Nano Letters, 9(1), 422-426. doi:10.1021/nl803316hLiao, L., Lin, Y.-C., Bao, M., Cheng, R., Bai, J., Liu, Y., … Duan, X. (2010). High-speed graphene transistors with a self-aligned nanowire gate. Nature, 467(7313), 305-308. doi:10.1038/nature09405Wang, X., Tabakman, S. M., & Dai, H. (2008). Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene. Journal of the American Chemical Society, 130(26), 8152-8153. doi:10.1021/ja8023059Geim, A. K. (2009). Graphene: Status and Prospects. Science, 324(5934), 1530-1534. doi:10.1126/science.1158877Mistewicz, K., Nowak, M., Wrzalik, R., Śleziona, J., Wieczorek, J., & Guiseppi-Elie, A. (2016). Ultrasonic processing of SbSI nanowires for their application to gas sensors. Ultrasonics, 69, 67-73. doi:10.1016/j.ultras.2016.04.004Jesionek, M., Nowak, M., Mistewicz, K., Kępińska, M., Stróż, D., Bednarczyk, I., & Paszkiewicz, R. (2018). Sonochemical growth of nanomaterials in carbon nanotube. Ultrasonics, 83, 179-187. doi:10.1016/j.ultras.2017.03.014Chen, X., Seo, D. H., Seo, S., Chung, H., & Wong, H.-S. P. (2012). Graphene Interconnect Lifetime: A Reliability Analysis. IEEE Electron Device Letters, 33(11), 1604-1606. doi:10.1109/led.2012.2211564Wang, Z. F., Zheng, H., Shi, Q. W., & Chen, J. (2009). Emerging nanodevice paradigm. ACM Journal on Emerging Technologies in Computing Systems, 5(1), 1-19. doi:10.1145/1482613.1482616Dong, J., Xiang, G., Xiang-Yang, K., & Jia-Ming, L. (2007). Atomistic Failure Mechanism of Single Wall Carbon Nanotubes with Small Diameters. Chinese Physics Letters, 24(1), 165-168. doi:10.1088/0256-307x/24/1/045Bu, H., Chen, Y., Zou, M., Yi, H., Bi, K., & Ni, Z. (2009). Atomistic simulations of mechanical properties of graphene nanoribbons. Physics Letters A, 373(37), 3359-3362. doi:10.1016/j.physleta.2009.07.04

Injecting Intermittent Faults for the Dependability Assessment of a Fault-Tolerant Microcomputer System

© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.As scaling is more and more aggressive, intermittent faults are increasing their importance in current deep submicron complementary metal-oxide-semiconductor (CMOS) technologies. This work shows the dependability assessment of a fault-tol- erant computer system against intermittent faults. The applied methodology lies in VHDL-based fault injection, which allows the assessment in early design phases, together with a high level of observability and controllability. The evaluated system is a duplex microcontroller system with cold stand-by sparing. A wide set of intermittent fault models have been injected, and from the simulation traces, coverages and latencies have been measured. Markov models for this system have been generated and some dependability functions, such as reliability and safety, have been calculated. From these results, some enhancements of detection and recovery mechanisms have been suggested. The methodology presented is general to any fault-tolerant computer system.This work was supported in part by the Universitat Politecnica de Valencia under the Research Project SP20120806, and in part by the Spanish Government under the Research Project TIN2012-38308-C02-01. Associate Editor: J. Shortle.Gil Tomás, DA.; Gracia Morán, J.; Baraza Calvo, JC.; Saiz Adalid, LJ.; Gil Vicente, PJ. (2016). Injecting Intermittent Faults for the Dependability Assessment of a Fault-Tolerant Microcomputer System. IEEE Transactions on Reliability. 65(2):648-661. https://doi.org/10.1109/TR.2015.2484058S64866165

Improving Error Correction Codes for Multiple-Cell Upsets in Space Applications

© 2018 IEEE. Personal use of this material is permitted. Permissíon from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertisíng or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.[EN] Currently, faults suffered by SRAM memory systems have increased due to the aggressive CMOS integration density. Thus, the probability of occurrence of single-cell upsets (SCUs) or multiple-cell upsets (MCUs) augments. One of the main causes of MCUs in space applications is cosmic radiation. A common solution is the use of error correction codes (ECCs). Nevertheless, when using ECCs in space applications, they must achieve a good balance between error coverage and redundancy, and their encoding/decoding circuits must be efficient in terms of area, power, and delay. Different codes have been proposed to tolerate MCUs. For instance, Matrix codes use Hamming codes and parity checks in a bi-dimensional layout to correct and detect some patterns of MCUs. Recently presented, column¿line¿code (CLC) has been designed to tolerate MCUs in space applications. CLC is a modified Matrix code, based on extended Hamming codes and parity checks. Nevertheless, a common property of these codes is the high redundancy introduced. In this paper, we present a series of new lowredundant ECCs able to correct MCUs with reduced area, power, and delay overheads. Also, these new codes maintain, or even improve, memory error coverage with respect to Matrix and CLC codes.This work was supported by the Spanish Government under the research Project TIN2016-81075-R.Gracia-Morán, J.; Saiz-Adalid, L.; Gil Tomás, DA.; Gil, P. (2018). Improving Error Correction Codes for Multiple-Cell Upsets in Space Applications. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26(10):2132-2142. https://doi.org/10.1109/TVLSI.2018.2837220S21322142261

Fomento de la motivación y uso de mapas conceptuales en el primer día de clase

El estudio de Informática por estudiantes de Ingenierías ‘no Informáticas’ es visto a menudo como un apéndice poco práctico de su titulación. A pesar de que cualquier estudiante de carreras técnicas tiene conocimientos de Informática a nivel de usuario, al profundizar en conceptos de arquitectura y estructura de computadores, la Informática se ve como una asignatura que deben aprobar, pero que no aportará grandes beneficios de cara al desempeño de su profesión. En este sentido, cobra especial importancia el primer día de clase para motivar al alumnado ante la materia, situando los conocimientos que se van a adquirir en un contexto adecuado, de tal forma que pase a convertirse en algo complementario y no en un simple apéndice de su currículo. El presente trabajo muestra la utilización de mapas conceptuales durante el primer día de clase para facilitar la comprensión de la asignatura, y de esta forma fomentar la motivación del alumnado

Bases para la puesta en marcha de un modelo de recuperación ambiental del paisaje de Tierra de Campos (Castilla y León, España)

Producción CientíficaTierra de Campos es una comarca de unos 4400 km2, cuyas características son el dominio del cultivo agrícola herbáceo, la práctica ausencia de vegetación natural y un gran declive demográfico. Su paisaje es uno de los más representativos de las campiñas agrícolas cerealistas, tanto de Castilla y León como del conjunto de España. La agricultura intensiva y las concentraciones parcelarias lo han simplificado notablemente, reduciendo su calidad visual y biodiversidad. En este trabajo se exponen las alteraciones más significativas de este paisaje, entre las que destacan: la pérdida de vegetación natural, la irrupción de grandes naves en el entorno de los pueblos y la desaparición del patrimonio cultural edificado. Analizada su degradación secular, se propone un modelo de recuperación que contempla tres tratamientos generales: la restauración vegetal con árboles y arbustos, la integración paisajística de edificaciones e infraestructuras, y la restauración del patrimonio cultural. Para ello se definen 56 actuaciones en los 14 espacios degradados diagnosticados: 1) espacios agrícolas intensivos afectados por concentraciones parcelarias; 2) espacios afectados por transformaciones en regadío; 3) aquellos afectados por infraestructuras lineales de transporte; 4) los afectados por explotaciones mineras, préstamos y vertederos; 5) espacios afectados por infraestructuras energéticas; 6) ríos y arroyos desnaturalizados; 7) zonas húmedas degradadas; 8) vías pecuarias y del ferrocarril en desuso; 9) fuentes y parcelas públicas degradadas; 10) terrenos deforestados y/o erosionados; 11) escombreras y vertederos de residuos; 12) entorno de construcciones en suelo rústico; 13) periferias de los pueblos; y 14) pueblos descuidados y abandonados. Para conseguir su restauración, se seleccionan 32 árboles y 27 arbustos. Finalmente, se define la imagen objetivo de este paisaje agrícola, cuya recuperación conllevará un mayor arraigo y calidad de vida de sus habitantes y constituirá un recurso socioeconómico para la comarca

Reducing the Overhead of BCH Codes: New Double Error Correction Codes

[EN] The Bose-Chaudhuri-Hocquenghem (BCH) codes are a well-known class of powerful error correction cyclic codes. BCH codes can correct multiple errors with minimal redundancy. Primitive BCH codes only exist for some word lengths, which do not frequently match those employed in digital systems. This paper focuses on double error correction (DEC) codes for word lengths that are in powers of two (8, 16, 32, and 64), which are commonly used in memories. We also focus on hardware implementations of the encoder and decoder circuits for very fast operations. This work proposes new low redundancy and reduced overhead (LRRO) DEC codes, with the same redundancy as the equivalent BCH DEC codes, but whose encoder, and decoder circuits present a lower overhead (in terms of propagation delay, silicon area usage and power consumption). We used a methodology to search parity check matrices, based on error patterns, in order to design the new codes. We implemented and synthesized them, and compared their results with those obtained for the BCH codes. Our implementation of the decoder circuits achieved reductions between 2.8% and 8.7% in the propagation delay, between 1.3% and 3.0% in the silicon area, and between 15.7% and 26.9% in the power consumption. Therefore, we propose LRRO codes as an alternative for protecting information against multiple errors.This research was supported in part by the Spanish Government, project TIN2016-81075-R, by Primeros Proyectos de Investigacion (PAID-06-18), Vicerrectorado de Investigacion, Innovacion y Transferencia de la Universitat Politecnica de Valencia (UPV), project 20190032, and by the Institute of Information and Communication Technologies (ITACA).Saiz-Adalid, L.; Gracia-Morán, J.; Gil Tomás, DA.; Baraza Calvo, JC.; Gil, P. (2020). Reducing the Overhead of BCH Codes: New Double Error Correction Codes. Electronics. 9(11):1-14. https://doi.org/10.3390/electronics9111897S114911Fujiwara, E. (2005). Code Design for Dependable Systems. doi:10.1002/0471792748Xinmiao, Z. (2017). VLSI Architectures for Modern Error-Correcting Codes. doi:10.1201/b18673Bose, R. C., & Ray-Chaudhuri, D. K. (1960). On a class of error correcting binary group codes. Information and Control, 3(1), 68-79. doi:10.1016/s0019-9958(60)90287-4Chen, P., Zhang, C., Jiang, H., Wang, Z., & Yue, S. (2015). High performance low complexity BCH error correction circuit for SSD controllers. 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). doi:10.1109/edssc.2015.7285089IEEE 802.3-2018 - IEEE Standard for Ethernethttps://standards.ieee.org/standard/802_3-2018.htmlH.263: Video Coding for Low Bit Rate Communicationhttps://www.itu.int/rec/T-REC-H.263/enVangelista, L., Benvenuto, N., Tomasin, S., Nokes, C., Stott, J., Filippi, A., … Morello, A. (2009). Key technologies for next-generation terrestrial digital television standard DVB-T2. IEEE Communications Magazine, 47(10), 146-153. doi:10.1109/mcom.2009.52738222013 ITRS—International Technology Roadmap for Semiconductorshttp://www.itrs2.net/2013-itrs.htmlIbe, E., Taniguchi, H., Yahagi, Y., Shimbo, K., & Toba, T. (2010). Impact of Scaling on Neutron-Induced Soft Error in SRAMs From a 250 nm to a 22 nm Design Rule. IEEE Transactions on Electron Devices, 57(7), 1527-1538. doi:10.1109/ted.2010.2047907Gil-Tomás, D., Gracia-Morán, J., Baraza-Calvo, J.-C., Saiz-Adalid, L.-J., & Gil-Vicente, P.-J. (2012). Studying the effects of intermittent faults on a microcontroller. Microelectronics Reliability, 52(11), 2837-2846. doi:10.1016/j.microrel.2012.06.004Neubauer, A., Freudenberger, J., & Khn, V. (2007). Coding Theory. doi:10.1002/9780470519837Morelos-Zaragoza, R. H. (2006). The Art of Error Correcting Coding. doi:10.1002/0470035706Naseer, R., & Draper, J. (2008). DEC ECC design to improve memory reliability in Sub-100nm technologies. 2008 15th IEEE International Conference on Electronics, Circuits and Systems. doi:10.1109/icecs.2008.4674921Saiz-Adalid, L.-J., Gracia-Moran, J., Gil-Tomas, D., Baraza-Calvo, J.-C., & Gil-Vicente, P.-J. (2019). Ultrafast Codes for Multiple Adjacent Error Correction and Double Error Detection. IEEE Access, 7, 151131-151143. doi:10.1109/access.2019.2947315Saiz-Adalid, L.-J., Gil-Vicente, P.-J., Ruiz-García, J.-C., Gil-Tomás, D., Baraza, J.-C., & Gracia-Morán, J. (2013). Flexible Unequal Error Control Codes with Selectable Error Detection and Correction Levels. Computer Safety, Reliability, and Security, 178-189. doi:10.1007/978-3-642-40793-2_17Saiz-Adalid, L.-J., Reviriego, P., Gil, P., Pontarelli, S., & Maestro, J. A. (2015). MCU Tolerance in SRAMs Through Low-Redundancy Triple Adjacent Error Correction. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 23(10), 2332-2336. doi:10.1109/tvlsi.2014.2357476Gracia-Moran, J., Saiz-Adalid, L. J., Gil-Tomas, D., & Gil-Vicente, P. J. (2018). Improving Error Correction Codes for Multiple-Cell Upsets in Space Applications. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 26(10), 2132-2142. doi:10.1109/tvlsi.2018.2837220Cadence: Computational Software for Intelligent System Designhttps://www.cadence.comStine, J. E., Castellanos, I., Wood, M., Henson, J., Love, F., Davis, W. R., … Jenkal, R. (2007). FreePDK: An Open-Source Variation-Aware Design Kit. 2007 IEEE International Conference on Microelectronic Systems Education (MSE’07). doi:10.1109/mse.2007.44NanGate FreePDK45 Open Cell Libraryhttp://www.nangate.com/?page_id=232

Effects of intermittent faults on the reliability of a Reduced Instruction Set Computing (RISC) microprocessor

© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.With the scaling of complementary metal-oxide-semiconductor (CMOS) technology to the submicron range, designers have to deal with a growing number and variety of fault types. In this way, intermittent faults are gaining importance in modern very large scale integration (VLSI) circuits. The presence of these faults is increasing due to the complexity of manufacturing processes (which produce residues and parameter variations), together with special aging mechanisms. This work presents a case study of the impact of intermittent faults on the behavior of a reduced instruction set computing (RISC) microprocessor. We have carried out an exhaustive reliability assessment by using very-high-speed-integrated-circuit hardware description language (VHDL)-based fault injection. In this way, we have been able to modify different intermittent fault parameters, to select various targets, and even, to compare the impact of intermittent faults with those induced by transient and permanent faults.This work was supported by the Spanish Government under the Research Project TIN2009-13825 and by the Universitat Politecnica de Valencia under the Project SP20120806. Associate Editor: L. Cui.Gracia-Morán, J.; Baraza Calvo, JC.; Gil Tomás, DA.; Saiz-Adalid, L.; Gil, P. (2014). Effects of intermittent faults on the reliability of a Reduced Instruction Set Computing (RISC) microprocessor. IEEE Transactions on Reliability. 63(1):144-153. https://doi.org/10.1109/TR.2014.2299711S14415363

Proposal of an Adaptive Fault Tolerance Mechanism to Tolerate Intermittent Faults in RAM

[EN] Due to transistor shrinking, intermittent faults are a major concern in current digital systems. This work presents an adaptive fault tolerance mechanism based on error correction codes (ECC), able to modify its behavior when the error conditions change without increasing the redundancy. As a case example, we have designed a mechanism that can detect intermittent faults and swap from an initial generic ECC to a specific ECC capable of tolerating one intermittent fault. We have inserted the mechanism in the memory system of a 32-bit RISC processor and validated it by using VHDL simulation-based fault injection. We have used two (39, 32) codes: a single error correction-double error detection (SEC-DED) and a code developed by our research group, called EPB3932, capable of correcting single errors and double and triple adjacent errors that include a bit previously tagged as error-prone. The results of injecting transient, intermittent, and combinations of intermittent and transient faults show that the proposed mechanism works properly. As an example, the percentage of failures and latent errors is 0% when injecting a triple adjacent fault after an intermittent stuck-at fault. We have synthesized the adaptive fault tolerance mechanism proposed in two types of FPGAs: non-reconfigurable and partially reconfigurable. In both cases, the overhead introduced is affordable in terms of hardware, time and power consumption.This research was supported in part by the Spanish Government, project TIN2016-81,075-R, and by Primeros Proyectos de Investigacion (PAID-06-18), Vicerrectorado de Investigacion, Innovacion y Transferencia de la Universitat Politecnica de Valencia (UPV), project 20190032.Baraza Calvo, JC.; Gracia-Morán, J.; Saiz-Adalid, L.; Gil Tomás, DA.; Gil, P. (2020). Proposal of an Adaptive Fault Tolerance Mechanism to Tolerate Intermittent Faults in RAM. Electronics. 9(12):1-30. https://doi.org/10.3390/electronics9122074S130912International Technology Roadmap for Semiconductors (ITRS)http://www.itrs2.net/2013-itrs.htmlJeng, S.-L., Lu, J.-C., & Wang, K. (2007). A Review of Reliability Research on Nanotechnology. IEEE Transactions on Reliability, 56(3), 401-410. doi:10.1109/tr.2007.903188Ibe, E., Taniguchi, H., Yahagi, Y., Shimbo, K., & Toba, T. (2010). Impact of Scaling on Neutron-Induced Soft Error in SRAMs From a 250 nm to a 22 nm Design Rule. IEEE Transactions on Electron Devices, 57(7), 1527-1538. doi:10.1109/ted.2010.2047907Boussif, A., Ghazel, M., & Basilio, J. C. (2020). Intermittent fault diagnosability of discrete event systems: an overview of automaton-based approaches. Discrete Event Dynamic Systems, 31(1), 59-102. doi:10.1007/s10626-020-00324-yConstantinescu, C. (2003). Trends and challenges in VLSI circuit reliability. 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Ultrafast Codes for Multiple Adjacent Error Correction and Double Error Detection

(c) 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.[EN] Reliable computer systems employ error control codes (ECCs) to protect information from errors. For example, memories are frequently protected using single error correction-double error detection (SEC-DED) codes. ECCs are traditionally designed to minimize the number of redundant bits, as they are added to each word in the whole memory. Nevertheless, using an ECC introduces encoding and decoding latencies, silicon area usage and power consumption. In other computer units, these parameters should be optimized, and redundancy would be less important. For example, protecting registers against errors remains a major concern for deep sub-micron systems due to technology scaling. In this case, an important requirement for register protection is to keep encoding and decoding latencies as short as possible. Ultrafast error control codes achieve very low delays, independently of the word length, increasing the redundancy. This paper summarizes previous works on Ultrafast codes (SEC and SEC-DED), and proposes new codes combining double error detection and adjacent error correction. We have implemented, synthesized and compared different Ultrafast codes with other state-of-the-art fast codes. The results show the validity of the approach, achieving low latencies and a good balance with silicon area and power consumption.This work was supported in part by the Spanish Government under Project TIN2016-81075-R, and in part by the Primeros Proyectos de Investigacion, Vicerrectorado de Investigacion, Innovacion y Transferencia de la Universitat Politecnica de Valencia (UPV), Valencia, Spain, under Project PAID-06-18 20190032.Saiz-Adalid, L.; Gracia-Morán, J.; Gil Tomás, DA.; Baraza Calvo, JC.; Gil, P. (2019). Ultrafast Codes for Multiple Adjacent Error Correction and Double Error Detection. IEEE Access. 7:151131-151143. https://doi.org/10.1109/ACCESS.2019.2947315S151131151143