Analysis of recreational land using Skylab data

The author has identified the following significant results. S192 data collected on 5 August 1973 were processed by computer to produce a classification map of a part of the Gratiot-Saginaw State Game Area in south central Michigan. A 10-category map was prepared of an area consisting of diverse terrain types, including forests, wetlands, brush, and herbaceous vegetation. An accuracy check indicated that 54% of the pixels were correctly recognized. When these ten scene classes were consolidated to a 5-category map, the accuracy increased to 72%. S190 A, S190 B, and S192 data can be used for regional surveys of existing and potential recreation sites, for delineation of open space, and for preliminary evaluation of geographically extensive sites

Electron correlations in Mnx_xGa1−x_{1-x}As as seen by resonant electron spectroscopy and dynamical mean field theory

After two decades from the discovery of ferromagnetism in Mn-doped GaAs, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of Mn-doped GaAs. The experimental data are obtained through the differences between off- and on-resonance photo-emission data. The theoretical spectrum is calculated by means of a combination of density-functional theory in the local density approximation and dynamical mean-field theory (LDA+DMFT), using exact diagonalisation as impurity solver. Theory is found to accurately reproduce measured data, and illustrates the importance of correlation effects. Our results demonstrate that the Mn states extend over a broad range of energy, including the top of the valence band, and that no impurity band splits off from the valence band edge, while the induced holes seem located primarily around the Mn impurity.Comment: 5 pages, 4 figure

Mn induced modifications of Ga 3d photoemission from (Ga, Mn)As: evidence for long range effects

Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown ${\rm Ga}_{1-x}{\rm Mn}_{x}{\rm As}$. Although Mn is located in Ga substitutional sites, and does therefore not have any Ga nearest neighbours, the impact of Mn on the Ga core level spectra is pronounced even at Mn concentrations in the range of 0.5%. The analysis shows that each Mn atom affects a volume corresponding to a sphere with around 1.4 nm diameter.Comment: Submitted to Physical Review B, Brief Repor

Termination dependent topological surface states of the natural superlattice phase Bi4_4Se3_3

We describe the topological surface states of Bi$_4$Se$_3$, a compound in the infinitely adaptive Bi$_2$-Bi$_2$Se$_3$ natural superlattice phase series, determined by a combination of experimental and theoretical methods. Two observable cleavage surfaces, terminating at Bi or Se, are characterized by angle resolved photoelectron spectroscopy and scanning tunneling microscopy, and modeled by ab-initio density functional theory calculations. Topological surface states are observed on both surfaces, but with markedly different dispersions and Kramers point energies. Bi$_4$Se$_3$ therefore represents the only known compound with different topological states on differently terminated surfaces.Comment: 5 figures references added Published in PRB: http://link.aps.org/doi/10.1103/PhysRevB.88.08110

Band-structure analysis in (Ga,Mn)As epitaxial layers

The ternary III-V semiconductor (Ga,Mn)As has recently drawn a lot of attention as the model diluted ferromagnetic semiconductor, combining semiconducting properties with magnetism. (Ga,Mn)As layers are usually gown by the low-temperature molecular-beam epitaxy (LT-MBE) technique. Below a magnetic transition temperature, TC, substitutional Mn2+ ions are ferromagnetically ordered owing to interaction with spin-polarized holes. However, the character of electronic states near the Fermi energy and the valence-band structure in ferromagnetic (Ga,Mn)As are still a matter of controversy. The photoreflectance (PR) spectroscopy was applied to study the band-structure evolution in (Ga,Mn)As layers with increasing Mn content. We have investigated thick (800 - 700nm and 230 – 300nm) (Ga,Mn)As layers with Mn content in the range from 0.001% to 6% and, as a reference, undoped GaAs layer, grown by LT-MBE on semiinsulating (001) GaAs substrates. Our findings were interpreted in terms of the model, which assumes that the mobile holes residing in the valence band of ferromagnetic (Ga,Mn)As and the Fermi level position determined by the concentration of valenceband holes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2063