Active dielectric antenna on chip for spatial light modulation

Integrated photonic resonators are widely used to manipulate light propagation in an evanescently-coupled waveguide. While the evanescent coupling scheme works well for planar optical systems that are naturally waveguide based, many optical applications are free-space based, such as imaging, display, holographics, metrology and remote sensing. Here we demonstrate an active dielectric antenna as the interface device that allows the large-scale integration capability of silicon photonics to serve the free-space applications. We show a novel perturbation-base diffractive coupling scheme that allows a high-Q planer resonator to directly interact with and manipulate free-space waves. Using a silicon-based photonic crystal cavity whose resonance can be rapidly tuned with a p-i-n junction, a compact spatial light modulator with an extinction ratio of 9.5 dB and a modulation speed of 150 MHz is demonstrated. Method to improve the modulation speed is discussed.Air Force Office of Scientific Research (AFOSR grant FA9550-12-1-0261

Lower bound for the spatial extent of localized modes in photonic-crystal waveguides with small random imperfections

Light localization due to random imperfections in periodic media is paramount in photonics research. The group index is known to be a key parameter for localization near photonic band edges, since small group velocities reinforce light interaction with imperfections. Here, we show that the size of the smallest localized mode that is formed at the band edge of a one-dimensional periodic medium is driven instead by the effective photon mass, i.e. the flatness of the dispersion curve. Our theoretical prediction is supported by numerical simulations, which reveal that photonic-crystal waveguides can exhibit surprisingly small localized modes, much smaller than those observed in Bragg stacks thanks to their larger effective photon mass. This possibility is demonstrated experimentally with a photonic-crystal waveguide fabricated without any intentional disorder, for which near-field measurements allow us to distinctly observe a wavelength-scale localized mode despite the smallness (∼1/1000 of a wavelength) of the fabrication imperfections

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Strongly enhanced light emission at wavelengths between 1.3 and 1.6 μm is reported at room temperature in silicon photonic crystal (PhC) nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures.Publisher PDFPeer reviewe

Enhancement of room temperature sub-bandgap light emission from silicon photonic crystal nanocavity by Purcell effect

We report the enhancement of sub-bandgap photoluminescence from silicon via the Purcell effect. We couple the defect emission from silicon, which is believed to be due to hydrogen incorporation into the lattice, to a photonic crystal (PhC) nanocavity. We observe an up to 300-fold enhancement of the emission at room temperature at 1550 nm, as compared to an unpatterned sample, which is then comparable to the silicon band-edge emission. We discuss the possibility of enhancing this emission even further by introducing additional defects by ion implantation, or by treating the silicon PhC nanocavity with hydrogen plasma. © 2011 Elsevier B.V

Photoluminescence spectroscopy of silicon photonic crystal nanocavities

This paper demonstrates the possibility to characterize Si photonic crystal (PhC) nanocavity modes made on silicon on insulator (SOI), and operating at telecom wavelengths, through photoluminescence (PL) spectroscopy at room temperature. In fact, a wide PL band between 1200 and 1600 nm is observed under optical pumping when proper material processing is performed after the nanocavities fabrication, namely plasma treatment and Si implantation. PL emission is originated through the carrier recombination occurring at defect states formed in silicon after such treatments. Photonic modes of L3 PhC nanocavities were studied with a proper geometry optimization in order to obtain high quality (Q) factors and improved coupling to the far field

Nonlinear optics in Silicon photonic crystal cavities

Silicon is known to be a very good material for the realization of high-Q, low-volume photonic cavities, but at the same it is usually considered as a poor material for nonlinear optical functionalities like second-harmonic generation, because its second-order nonlinear susceptibility vanishes in the dipole approximation. In this work we demonstrate that nonlinear optical effects in silicon nanocavities can be strongly enhanced and even become macroscopically observable. We employ photonic crystal nanocavities in silicon membranes that are optimized simultaneously for high quality factor and efficient coupling to an incoming beam in the far field. Using a low-power, continuous-wave laser at telecommunication wavelengths as a pump beam, we demonstrate simultaneous generation of second- and third harmonics in the visible region, which can be observed with a simple camera. The results are in good agreement with a theoretical model that treats third-harmonic generation as a bulk effect in the cavity region, and second-harmonic generation as a surface effect arising from the vertical hole sidewalls. Optical bistability is also observed in the silicon nanocavities and its physical mechanisms (optical, due to two-photon generation of free carriers, as well as thermal) are investigated. © 2011 IEEE

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Light generation in silicon photonic crystal cavities

Far-field optimized photonic crystal nanocavities are used to strongly increase light generation from crystalline silicon. Low-power continuous-wave harmonic generation as well as efficient room temperature light-emission from optically-active defects are demonstrated in these devices. © 2011 IEEE

Subbandgap photoluminescence of Si photonic crystal nanocavity at room temperature

Using a photonic crystal cavity and a hydrogen plasma treatment, we enhance the photoluminescence (PL) from optically active defects in silicon by a factor of 3000 compared to the as-bought material at room temperature. © 2011 IEEE