Dislocation core structures in (0001) InGaN

Threading dislocation core structures in c-plane GaN and InxGa1−xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1−xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in InxGa1−xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in InxGa1−xN, consistent with predictions from atomistic Monte Carlo simulations.This work was funded in part by the Cambridge Commonwealth Trust, St. John’s College and the EPSRC (grant number EP/I012591/1). MAM acknowledges support from the Royal Society through a University Research Fellowship. Additional support was provided by the EPSRC (Supplementary data for EPSRC [49] is available) through the UK National Facility for Aberration-Corrected STEM (SuperSTEM). The Titan 80-200kV ChemiSTEM™ was funded through HM Government (UK) and is associated with the capabilities of the University of Manchester Nuclear Manufacturing (NUMAN) capabilities. SJH acknowledges funding from the Defence Threat Reduction Agency (DTRA) USA (grant number HDTRA1-12-1-0013). The authors also acknowledge C. M. McGilvery and A. Kovacs for helpful discussions.This is the author accepted manuscript. It is currently under an indefinite embargo pending publication by AIP

Structure and strain relaxation effects of defects in In<inf>x</inf>Ga<inf>1-x</inf>N epilayers

The formation of trench-defects is observed in 160 nm-thick InxGa1-xN epilayers with x ≤ 0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase epitaxy. The trench-defect density increases with increasing indium content, and high resolution transmission electron microscopy shows an identical structure to those observed previously in InGaN quantum wells, comprising meandering stacking mismatch boundaries connected to an I1-type basal plane stacking fault. These defects do not appear to relieve in-plane compressive strain. Other horizontal sub-interface defects are also observed for these samples and are found to be pre-existing threading dislocations which form half-loops by bending into the basal-plane, and not basal-plane stacking faults, as previously reported by other groups. The origins of these defects are discussed, and are likely to originate from a combination of the small in-plane misorientation of the sapphire substrate and the thermal mismatch strain between the GaN and InGaN layers grown at different temperatures.This work was funded in part by the Cambridge Commonwealth trust and the EPSRC. SKR is funded through the Cambridge-India Partnership Fund and Indian Institute of Technology Bombay via a scholarship. SKR also acknowledges funds from St. John’s College. MAM acknowledges support from the Royal Society through a University Research Fellowship.This is the accepted manuscript version. The final version is available from AIP at http://scitation.aip.org/content/aip/journal/jap/116/10/10.1063/1.4894688

Strong Lefschetz elements of the coinvariant rings of finite Coxeter groups

For the coinvariant rings of finite Coxeter groups of types other than H$_4$, we show that a homogeneous element of degree one is a strong Lefschetz element if and only if it is not fixed by any reflections. We also give the necessary and sufficient condition for strong Lefschetz elements in the invariant subrings of the coinvariant rings of Weyl groups.Comment: 18 page

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

In this paper we report on the impact that the quantum well growth temperature has on the internal quantum efficiency and carrier recombination dynamics of two sets of InGaN/GaN multiple quantum well samples, designed to emit at 460 and 530 nm, in which the indium content of the quantum wells within each sample set was maintained. Measurements of the internal quantum efficiency of each sample set showed a systematic variation, with quantum wells grown at a higher temperature exhibiting higher internal quantum efficiency and this variation was preserved at all excitation power densities. By investigating the carrier dynamics at both 10 K and 300 K we were able to attribute this change in internal quantum efficiency to a decrease in the non-radiative recombination rate as the QW growth temperature was increased which we attribute to a decrease in incorporation of the point defects.This work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/H011676/1.This is the final version of the article. It first appeared from Wiley via https://doi.org/10.1002/pssc.20151018

Carrier localization in the vicinity of dislocations in InGaN

We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmission electron microscopy), and its morphological optical and structural properties directly correlated. We achieved this across an ensemble of defects large enough to be statistically significant. Our results provide evidence that carrier localization occurs in the direct vicinity of the dislocation through the enhanced formation of In-N chains and atomic condensates, thus limiting non-radiative recombination of carriers at the dislocation core. We highlight that the localization properties in the vicinity of threading dislocations arise as a consequence of the strain field of the individual dislocation and the additional strain field building between interacting neighboring dislocations. Our study therefore suggests that careful strain and dislocation distribution engineering may further improve the resilience of InGaN-based devices to threading dislocations. Besides providing a new understanding of dislocations in InGaN, this paper presents a proof-of-concept for a methodology which is relevant to many problems in materials science.This project is funded in part by the European Research Council under the European Community's Seventh Framework Programme (FP7/2007-2013)/ERC Grant Agreement No. 279361 (MACONS). The research leading to these results has received funding from the European Union Seventh Framework Programme under Grant Agreement 312483-ESTEEM2 (Integrated Infrastructure InitiativeI3). F.M. would also like to acknowledge the financial support from EPSRC Doctoral Prize Awards and Cambridge Philosophical Society. M.H. would like to acknowledge support from the Lindemann Fellowship

Alloy fluctuations at dislocations in III-Nitrides: identification and impact on optical properties

We investigated alloy fluctuations at dislocations in III-Nitride alloys (InGaN and AlGaN). We found that in both alloys, atom segregation (In segregation in InGaN and Ga segregation in AlGaN) occurs in the tensile part of dislocations with an edge component. In InGaN, In atom segregation leads to an enhanced formation of In-N chains and atomic condensates which act as carrier localization centers. This feature results in a bright spot at the position of the dislocation in the CL images, suggesting that non-radiative recombination at dislocations is impaired. On the other hand, Ga atom segregation at dislocations in AlGaN does not seem to noticeably affect the intensity recorded by CL at the dislocation. This study sheds light on why InGaN-based devices are more resilient to dislocations than AlGaN-based devices. An interesting approach to hinder non-radiative recombination at dislocations may therefore be to dope AlGaN with In.ER

Report from the third international consensus meeting to harmonise core outcome measures for atopic eczema/dermatitis clinical trials (HOME).

This report provides a summary of the third meeting of the Harmonising Outcome Measures for Eczema (HOME) initiative held in San Diego, CA, U.S.A., 6-7 April 2013 (HOME III). The meeting addressed the four domains that had previously been agreed should be measured in every eczema clinical trial: clinical signs, patient-reported symptoms, long-term control and quality of life. Formal presentations and nominal group techniques were used at this working meeting, attended by 56 voting participants (31 of whom were dermatologists). Significant progress was made on the domain of clinical signs. Without reference to any named scales, it was agreed that the intensity and extent of erythema, excoriation, oedema/papulation and lichenification should be included in the core outcome measure for the scale to have content validity. The group then discussed a systematic review of all scales measuring the clinical signs of eczema and their measurement properties, followed by a consensus vote on which scale to recommend for inclusion in the core outcome set. Research into the remaining three domains was presented, followed by discussions. The symptoms group and quality of life groups need to systematically identify all available tools and rate the quality of the tools. A definition of long-term control is needed before progress can be made towards recommending a core outcome measure

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties

We conducted a comprehensive investigation of dislocations in Al$_{0.46}$Ga$_{0.54}$N. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray spectroscopy, the atomic structure and atom distribution at the dislocation core have been examined. We report that the core configuration of dislocations in AlGaN is consistent with that of other materials in the III-Nitride system. However, we observed that the dissociation of mixed-type dislocations is impeded by alloying GaN with AlN, which is confirmed by our experimental observation of Ga and Al atom segregation in the tensile and compressive parts of the dislocations, respectively. Investigation of the optical properties of the dislocations shows that the atom segregation at dislocations has no significant effect on the intensity recorded by cathodoluminescence in the vicinity of the dislocations. These results are in contrast with the case of dislocations in In$_{0.09}$Ga$_{0.91}$N where segregation of In and Ga atoms also occurs but results in carrier localization limiting non-radiative recombination at the dislocation. This study therefore sheds light on why InGaN-based devices are generally more resilient to dislocations than their AlGaN-based counterparts.This project is funded in part by the European Research Council under the European Community’s Seventh Framework Programme (FP7/2007-2013)/ERC Grant Agreement 279361 (MACONS). The research leading to these results has received funding from the European Union Seventh Framework Programme under Grant Agreement 312483 - ESTEEM2 (Integrated Infrastructure InitiativeI3). S.R. acknowledges financial support from the ERC Starting Grant 307636 “SCOPE”. M.H. would like to acknowledge support from the Lindemann Trust Fellowship

Chronic psychosocial and financial burden accelerates 5-year telomere shortening: findings from the Coronary Artery Risk Development in Young Adults Study.

Leukocyte telomere length, a marker of immune system function, is sensitive to exposures such as psychosocial stressors and health-maintaining behaviors. Past research has determined that stress experienced in adulthood is associated with shorter telomere length, but is limited to mostly cross-sectional reports. We test whether repeated reports of chronic psychosocial and financial burden is associated with telomere length change over a 5-year period (years 15 and 20) from 969 participants in the Coronary Artery Risk Development in Young Adults (CARDIA) Study, a longitudinal, population-based cohort, ages 18-30 at time of recruitment in 1985. We further examine whether multisystem resiliency, comprised of social connections, health-maintaining behaviors, and psychological resources, mitigates the effects of repeated&nbsp;burden on telomere attrition over 5 years. Our results indicate that adults with high chronic burden do not show decreased telomere length over the 5-year period. However, these effects do vary by level of resiliency, as regression results revealed a significant interaction between chronic burden and multisystem resiliency. For individuals with high repeated&nbsp;chronic burden and low multisystem resiliency (1 SD below the mean), there was a significant 5-year shortening in telomere length, whereas no significant relationships between chronic burden and attrition were evident for those at moderate and higher levels of resiliency. These effects apply similarly across the three components of resiliency. Results imply that interventions should focus on establishing strong social connections, psychological resources, and health-maintaining behaviors when attempting to ameliorate stress-related decline in telomere length among at-risk individuals