Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory

The static switching properties and readout characteristics of proposed high-speed and nonvolatile nanoelectromechanical (NEM) memory devices are investigated By conducting a three-dimensional finite element mechanical simulation combined with an electrostatic analysis, we analyze the electromechanical switching operation of a mechanically bistable NEM floating gate by applying gate voltage. We show that switching voltage can be reduced to less than 10V by reducing the zero-bias displacement of the floating gate and optimizing the cavity structure to improve mechanical symmetry. We also analyze the electrical readout property of the NEM memory devices by combining the electromechanical simulation with a drift-diffusion analysis We demonstrate that the mechanically bistable states of the floating gate can be detected via the changes in drain current with an ON/OFF current ratio of about 3 x 10 (C) 2009 The Japan Society of Applied Physic

Fabrication and characterization of Si3N4 ceramics without additives by high pressure hot pressing

High pressure hot-pressing of Si3N4 without additives was performed using various kinds of Si3N4 powder as starting materials, and the relation between densification and alpha-beta phase transformation was studied. The temperature dependences of Vickers microhardness and fracture toughness were also examined. Densification of Si3N4 was divided into three stages, and it was found that densification and phase transformation of Si3N4 under pressure were closely associated. The results of the temperature dependence of Vickers microhardness indicated that the high-temperature hardness was strongly influenced not only by the density and microstructure of sintered body but also by the purity of starting powder. The fracture toughness values of Si3N4 bodies without additives were 3.29-4.39 MN/m to the 3/2 power and independent of temperature up to 1400 C

Distribution of Microscopic Energy Flux in Equilibrium State

The distribution function P(j) of the microscopic energy flux, j, in equilibrium state is studied. It is observed that P(j) has a broad peak in small j regime and a stretched-exponential decay for large j. The peak structure originates in a potential advection term and energy transfer term between the particles. The stretched exponential tail comes from the momentum energy advection term.Comment: 5 pages, 2 figure

Hybridization gap formation in the Kondo insulator YbB12_{12} observed using time-resolved photoemission spectroscopy

A detailed low-energy electronic structure of a Kondo insulator YbB$_{12}$ was revealed by a synergetic combination of ultrahigh-resolution laser photoemission spectroscopy (PES) and time-resolved PES. The former confirmed a 25-meV pseudogap corresponding to the Kondo temperature of this material, and more importantly, it revealed that a 15-meV gap and a Kondo-peak feature developed below a crossover temperature $T^\ast \sim 110$ K. In harmony with this, the latter discovered a very long recombination time exceeding 100 ps below $\sim$$T^\ast$. This is a clear manifestation of photoexcited carriers due to the bottleneck in the recovery dynamics, which is interpreted as a developing hybridization gap of a hard gap.Comment: 6 pages, 4 figures, revised version accepted for publication in PRB Rapid Communication

Exciton diffusion in air-suspended single-walled carbon nanotubes

Direct measurements of the diffusion length of excitons in air-suspended single-walled carbon nanotubes are reported. Photoluminescence microscopy is used to identify individual nanotubes and to determine their lengths and chiral indices. Exciton diffusion length is obtained by comparing the dependence of photoluminescence intensity on the nanotube length to numerical solutions of diffusion equations. We find that the diffusion length in these clean, as-grown nanotubes is significantly longer than those reported for micelle-encapsulated nanotubes.Comment: 4 pages, 4 figure

Gate-induced blueshift and quenching of photoluminescence in suspended single-walled carbon nanotubes

Gate-voltage effects on photoluminescence spectra of suspended single-walled carbon nanotubes are investigated. Photoluminescence microscopy and excitation spectroscopy are used to identify individual nanotubes and to determine their chiralities. Under an application of gate voltage, we observe slight blueshifts in the emission energy and strong quenching of photoluminescence. The blueshifts are similar for different chiralities investigated, suggesting extrinsic mechanisms. In addition, we find that the photoluminescence intensity quenches exponentially with gate voltage.Comment: 4 pages, 4 figure