Ultraviolet Lasing Characteristics of ZnS Microbelt Lasers

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Direct multiple shoot induction and plant regeneration from dormant buds of Codonopsis pilosula (Franch.) Nannf.

An efficient and reproducible protocol for in vitro plant multiplication system via direct organogenesis from dormant buds of Codonopsis pilosula Nannf was developed. Multiple shoots were induced at a frequency of 75% after nine weeks on Murashige and Skoog (MS) medium supplemented with BAP (1.0 mg/l), NAA (0.5 mg/l), 3% sucrose and 0.7% agar. Approximately, 15 to 18 shoots were formed at the base of each dormant bud. Higher concentrations of BAP and NAA resulted in callus formation. Further development of shoot elongation and multiplication were also studied. Well-grown shoots of 2.8 cm height and 3.8 proliferation coefficient were achieved by sub-culturing on MS medium supplemented with 0.2 mg/l BAP and 0.05 mg/l IBA. At higher concentrations, BAP (0.5 mg/l) promoted higher shoot proliferation coefficient (4.2); however, it negatively affected shoot elongation. Further, low NAA concentration was beneficial to shoot proliferation. All in vitro-derived shoots measuring 2.5 to 3 cm in length, rooted when grown on ½MS (half of all MS elements) basal medium containing 1.5 mg/l IBA within 3 weeks, 100% of shoots developed roots and test-tube seedlings grew stout.Key words: Codonopsis pilosula, dormant bud, direct organogenesis, multiple shoot, shoot elongation, rooting

Feasibility investigation of cognitive rehabilitation service after traumatic brain injury in community

2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Lasing characteristics of random cylindrical microcavity lasers

Author name used in this publication: H. ZhuVersion of RecordPublishe

Primary Care Workforce And Continuous Medical Education In China: Lessons To Learn From A Nationwide Cross-sectional Survey

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Photon-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystals

The authors report the photon-induced conduction modulation in Si O2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices. © 2007 American Institute of Physics.published_or_final_versio

Directional single-mode emission from coupled whispering gallery resonators realized by using ZnS microbelts

Author name used in this publication: Siu Fung Yu2012-2013 > Academic research: refereed > Publication in refereed journalpublished_fina

Segregation of Mn, Si, Al, and oxygen during the friction stir welding of DH36 steel

This work investigates the role of welding speed in elemental segregation of Mn, Si, Al, and oxygen during friction stir welding (FSW) in DH36 steel. The experimental work undertaken showed that when the speed of the FSW process exceeds 500 RPM with a traverse speed of 400 mm/min, then elemental segregation of Mn, Si, Al, and O occurred. The mechanism of this segregation is not fully understood; additionally, the presence of oxygen within these segregated elements needs investigation. This work examines the elemental segregation within DH36 steel by conducting heat treatment experiments on unwelded samples incrementally in the range of 1200–1500 °C and at cooling rates similar to that in FSW process. The results of heat treatments were compared with samples welded under two extremes of weld tool speeds, namely W1 low tool speeds (200 RPM with traverse speed of 100 mm/min) and W2 high tool speeds (550 RPM with traverse speed of 400 mm/min). The results from the heat treatment trials showed that segregation commences when the temperature exceeds 1400 °C and Mn, Si, Al, and oxygen segregation progress occurs at 1450 °C and at a cooling rate associated with acicular ferrite formation. It was also found that high rotational speeds exceeding 500 RPM caused localized melting at the advancing-trailing side of the friction stir-welded samples. The study aims to estimate peak temperature limits at which elemental segregation does not occur and hence prevent their occurrence in practice by applying the findings to the tool’s rotational and traverse speed that correspond to the defined temperature

Higher Spin Black Holes from CFT

Higher spin gravity in three dimensions has explicit black holes solutions, carrying higher spin charge. We compute the free energy of a charged black hole from the holographic dual, a 2d CFT with extended conformal symmetry, and find exact agreement with the bulk thermodynamics. In the CFT, higher spin corrections to the free energy can be calculated at high temperature from correlation functions of W-algebra currents.Comment: 24 pages; v2 reference adde

Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. © 2007 American Institute of Physics.published_or_final_versio