Alteration patterns of trabecular bone microarchitectural characteristics induced by osteoarthritis over time

10.2147/CIA.S32513Clinical Interventions in Aging7303-31

Changes in microarchitectural characteristics at the tibial epiphysis induced by collagen-induced rheumatoid arthritis over time

10.2147/CIA.S35202Clinical Interventions in Aging7373-38

Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias anomaly and a V^1/2 dependence of the conductance, indicating a correlation gap in the density of states of GaMnAs. These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs.Comment: 14 pages, submitted to Phys. Rev.

Three-body decay of the d* dibaryon

Under certain circumstances, a three-body decay width can be approximated by an integral involving a product of two off-shell two-body decay widths. This ``angle-average'' approximation is used to calculate the $\pi NN$ decay width of the $d^*(J^\pi=3^+, T=0)$ dibaryon in a simple $\Delta^2$ model for the most important Feynman diagrams describing pion emissions with baryon-baryon recoil and meson retardation. The decay width is found to be about 0.006 (0.07, 0.5) MeV at the $d^*$ mass of 2065 (2100, 2150) MeV for input dynamics derived from the Full Bonn potential. The smallness of this width is qualitatively understood as the result of the three-body decay being ``third forbidden''. The concept of $\ell$ forbiddenness and the threshold behavior of a three-body decay are further studied in connection with the $\pi NN$ decay of the dibaryon $d'(J^\pi=0^-, T=0 or 2)$ where the idea of unfavorness has to be introduced. The implications of these results are briefly discussed.Comment: 15 pages, RevTeX, two-column journal style, six figure

Persistent Tissue Kinetics and Redistribution of Nanoparticles, Quantum Dot 705, in Mice: ICP-MS Quantitative Assessment

Background: Quantum dots (QDs) are autofluorescent semiconductor nanocrystals that can be used for in vivo biomedical imaging. However, we know little about their in vivo disposition and health consequences. Objectives: We assessed the tissue disposition and pharmacokinetics of QD705 in mice. Methods: We determined quantitatively the blood and tissue kinetics of QD705 in mice after single intravenous (iv) injection at the dose of 40 pmol for up to 28 days. Inductively coupled plasma–mass spectrometry (ICP-MS) measurement of cadmium was the primary method of quantification of QD705. Fluorescence light microscopy revealed the localization of QD705 in tissues. Results: Plasma half-life of QD705 in mice was short (18.5 hr), but ICP-MS analyses revealed QD705 persisted and even continued to increase in the spleen, liver, and kidney 28 days after an iv dose. Considerable time-dependent redistribution from body mass to liver and kidney was apparent between 1 and 28 days postdosing. The recoveries at both time points were near 100%; all QD705s reside in the body. Neither fecal nor urinary excretion of QD705 was detected appreciably in 28 days postdosing. Fluorescence microscopy demonstrated deposition of QD705 in the liver, spleen, and kidneys. Conclusion: Judging from the continued increase in the liver (29–42% of the administered dose), kidney (1.5–9.2%), and spleen (4.8–5.2%) between 1 and 28 days without any appreciable excretion, QD705 has a very long half-life, potentially weeks or even months, in the body and its health consequences deserve serious consideration

Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States

Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is here discussed using Monte Carlo simulations. This effort is a continuation of previous work (G. Alvarez, Phys. Rev. Lett. 89, 277202 (2002)) where the static properties of the model were studied. The present results support the view that the relevant regime of J/t (standard notation) is that of intermediate coupling, where carriers are only partially trapped near Mn spins, and locally ordered regions (clusters) are present above the Curie temperature T_C. This conclusion is based on the calculation of the resistivity vs. temperature, that shows a soft metal to insulator transition near T_C, as well on the analysis of the density-of-states and optical conductivity. In addition, in the clustered regime a large magnetoresistance is observed in simulations. Formal analogies between DMS and manganites are also discussed.Comment: Revtex4, 20 figures. References updated, minor changes to figures and tex

Spin injection into a ballistic semiconductor microstructure

A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient $\gamma$ is suppressed by the Sharvin resistance of the semiconductor $r_N^*=(h/e^2)(\pi^2/S_N)$, where $S_N$ is the Fermi-surface cross-section. It competes with the diffusion resistances of the ferromagnets $r_F$, and $\gamma\sim r_F/r_N^*\ll 1$ in the absence of contact barriers. Efficient spin injection can be ensured by contact barriers. Explicit formulae for the junction resistance and the spin-valve effect are presented.Comment: 5 pages, 2 column REVTeX. Explicit prescription relating the results of the ballistic and diffusive theories of spin injection is added. To this end, some notations are changed. Three references added, typos correcte

Anomalous Hall effect in paramagnetic two dimensional systems

We investigate the possibility of observing the anomalous Hall effect (AHE) in two dimensional paramagnetic systems. We apply the semiclassical equations of motion to carriers in the conduction and valence bands of wurtzite and zincblende quantum wells in the exchange field generated by magnetic impurities and we calculate the anomalous Hall conductivity based on the Berry phase corrections to the carrier velocity. We show that under certain circumstances this conductivity approaches one half of the conductance quantum. We consider the effect of an external magnetic field and show that for a small enough field the theory is unaltered.Comment: 9 pages, 10 figures, 2 table

Anomalous Hall effect in Fe/Cu bilayers

The scaling of anomalous Hall resistivity on the longitudinal resistivity has been intensively studied in the different magnetic systems, including multilayers and granular films, to examine which mechanism, skew scattering or side-jump, dominates. The basis of the scaling law is that both the resistivities are due to the electron scattering at the imperfections in the materials. By studying of anomalous Hall effect (AHE) in the simple Fe/Cu bilayers, we demonstrate that the measured anomalous Hall effect should not follow the scaling laws derived from skew scattering or side-jump mechanism due to the short-circuit and shunting effects of the non-magnetic layers.Comment: 12 pages, 4 figures; http://www.springerlink.com/content/1718722u75j24587

Measurement of the B0-anti-B0-Oscillation Frequency with Inclusive Dilepton Events

The $B^0$-$\bar B^0$ oscillation frequency has been measured with a sample of 23 million \B\bar B pairs collected with the BABAR detector at the PEP-II asymmetric B Factory at SLAC. In this sample, we select events in which both B mesons decay semileptonically and use the charge of the leptons to identify the flavor of each B meson. A simultaneous fit to the decay time difference distributions for opposite- and same-sign dilepton events gives $\Delta m_d = 0.493 \pm 0.012{(stat)}\pm 0.009{(syst)}$ ps$^{-1}$.Comment: 7 pages, 1 figure, submitted to Physical Review Letter