3,356 research outputs found
Ballistic one-dimensional holes with strong g-factor anisotropy in germanium
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e2/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors with absolute values below 1 in the quantum-well plane, and exceeding 10 out-of-plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, which is in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step toward the realization of novel devices for applications in quantum spintronics
Nongalvanic thermometry for ultracold two-dimensional electron domains
Measuring the temperature of a two-dimensional electron gas at temperatures
of a few mK is a challenging issue, which standard thermometry schemes may fail
to tackle. We propose and analyze a nongalvanic thermometer, based on a quantum
point contact and quantum dot, which delivers virtually no power to the
electron system to be measured.Comment: 5 pages, 3 figure
The Kondo Effect in the Unitary Limit
We observe a strong Kondo effect in a semiconductor quantum dot when a small
magnetic field is applied. The Coulomb blockade for electron tunneling is
overcome completely by the Kondo effect and the conductance reaches the
unitary-limit value. We compare the experimental Kondo temperature with the
theoretical predictions for the spin-1/2 Anderson impurity model. Excellent
agreement is found throughout the Kondo regime. Phase coherence is preserved
when a Kondo quantum dot is included in one of the arms of an Aharonov-Bohm
ring structure and the phase behavior differs from previous results on a
non-Kondo dot.Comment: 10 page
Le destin des manuscrits catholiques d’Isaac Papin après sa mort : convoitise et mystère autour de la dépouille intellectuelle d’un sympathisant janséniste
Isaac Papin (1657-1709), né calviniste, est passé à la postérité pour sa conversion au catholicisme. Après avoir été le fer de lance des pajonistes au sein du Refuge, il se convertit entre les mains de Bossuet, en 1690. La seconde partie de sa vie est beaucoup moins connue. Deux dossiers de la collection Port-Royal d’Utrecht permettent de lever le voile sur un aspect totalement inédit de son parcours : ses relations avec le milieu janséniste. Si les traces sont peu nombreuses, ses relations avec Pasquier Quesnel sont attestées. Après sa mort, ses manuscrits sont convoités et finalement récupérés par les jansénistes. Les textes qu’ils contiennent sont publiés par les soins de Quesnel, en 1713, sous le titre Les deux voies opposées en matière de religion
Single-electron tunneling in InP nanowires
We report on the fabrication and electrical characterization of field-effect
devices based on wire-shaped InP crystals grown from Au catalyst particles by a
vapor-liquid-solid process. Our InP wires are n-type doped with diameters in
the 40-55 nm range and lengths of several microns. After being deposited on an
oxidized Si substrate, wires are contacted individually via e-beam fabricated
Ti/Al electrodes. We obtain contact resistances as low as ~10 kOhm, with minor
temperature dependence. The distance between the electrodes varies between 0.2
and 2 micron. The electron density in the wires is changed with a back gate.
Low-temperature transport measurements show Coulomb-blockade behavior with
single-electron charging energies of ~1 meV. We also demonstrate energy
quantization resulting from the confinement in the wire.Comment: 4 pages, 3 figure
A CMOS silicon spin qubit
Silicon, the main constituent of microprocessor chips, is emerging as a
promising material for the realization of future quantum processors. Leveraging
its well-established complementary metal-oxide-semiconductor (CMOS) technology
would be a clear asset to the development of scalable quantum computing
architectures and to their co-integration with classical control hardware. Here
we report a silicon quantum bit (qubit) device made with an industry-standard
fabrication process. The device consists of a two-gate, p-type transistor with
an undoped channel. At low temperature, the first gate defines a quantum dot
(QD) encoding a hole spin qubit, the second one a QD used for the qubit
readout. All electrical, two-axis control of the spin qubit is achieved by
applying a phase-tunable microwave modulation to the first gate. Our result
opens a viable path to qubit up-scaling through a readily exploitable CMOS
platform.Comment: 12 pages, 4 figure
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