1,615 research outputs found
Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
We explore the robust quantization of the Hall resistance in epitaxial
graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of
quantum over classical capacitance in the charge transfer between the substrate
and graphene is such that Landau levels (in particular, the one at exactly zero
energy) remain completely filled over an extraordinarily broad range of
magnetic fields. One important implication of this pinning of the filling
factor is that the system can sustain a very high nondissipative current. This
makes epitaxial graphene ideally suited for quantum resistance metrology, and
we have achieved a precision of 3 parts in 10^10 in the Hall resistance
quantization measurements
Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
We demonstrate quantum Hall resistance measurements with metrological
accuracy in a small cryogen-free system operating at a temperature of around
3.8K and magnetic fields below 5T. Operating this system requires little
experimental knowledge or laboratory infrastructure, thereby greatly advancing
the proliferation of primary quantum standards for precision electrical
metrology. This significant advance in technology has come about as a result of
the unique properties of epitaxial graphene on SiC.Comment: 15 pages, 9 figure
Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements
We report a study of disorder effects on epitaxial graphene in the vicinity
of the Dirac point by magneto-transport. Hall effect measurements show that the
carrier density increases quadratically with temperature, in good agreement
with theoretical predictions which take into account intrinsic thermal
excitation combined with electron-hole puddles induced by charged impurities.
We deduce disorder strengths in the range 10.2 31.2 meV, depending on
the sample treatment. We investigate the scattering mechanisms and estimate the
impurity density to be cm for our samples.
An asymmetry in the electron/hole scattering is observed and is consistent with
theoretical calculations for graphene on SiC substrates. We also show that the
minimum conductivity increases with increasing disorder potential, in good
agreement with quantum-mechanical numerical calculations.Comment: 6 pages, 3 figure
Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
We study an epitaxial graphene monolayer with bilayer inclusions via
magnetotransport measurements and scanning gate microscopy at low temperatures.
We find that bilayer inclusions can be metallic or insulating depending on the
initial and gated carrier density. The metallic bilayers act as equipotential
shorts for edge currents, while closely spaced insulating bilayers guide the
flow of electrons in the monolayer constriction, which was locally gated using
a scanning gate probe.Comment: 5 pages, 5 figure
Helicity-dependent photocurrents in graphene layers excited by mid-infrared radiation of a CO-laser
We report the study of the helicity driven photocurrents in graphene excited
by mid-infrared light of a CO-laser. Illuminating an unbiased monolayer
sheet of graphene with circularly polarized radiation generates -- under
oblique incidence -- an electric current perpendicular to the plane of
incidence, whose sign is reversed by switching the radiation helicity. We show
that the current is caused by the interplay of the circular Hall effect
and the circular photogalvanic effect. Studying the frequency dependence of the
current in graphene layers grown on the SiC substrate we observe that the
current exhibits a resonance at frequencies matching the longitudinal optical
phonon in SiC
Организация закупок материально-технических ресурсов в Республике Беларусь: предпосылки и перспективы развития
Материалы VII Междунар. науч.-практ. конф., Гомель, 24–25 нояб. 2011 г
Terahertz radiation driven chiral edge currents in graphene
We observe photocurrents induced in single layer graphene samples by
illumination of the graphene edges with circularly polarized terahertz
radiation at normal incidence. The photocurrent flows along the sample edges
and forms a vortex. Its winding direction reverses by switching the light
helicity from left- to right-handed. We demonstrate that the photocurrent stems
from the sample edges, which reduce the spatial symmetry and result in an
asymmetric scattering of carriers driven by the radiation electric field. The
developed theory is in a good agreement with the experiment. We show that the
edge photocurrents can be applied for determination of the conductivity type
and the momentum scattering time of the charge carriers in the graphene edge
vicinity.Comment: 4 pages, 4 figure, additional Supplemental Material (3 pages, 1
figure
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