Microscopic interface phonon modes in structures of GaAs quantum dots embedded in AlAs shells

By means of a microscopic valence force field model, a series of novel microscopic interface phonon modes are identified in shell quantum dots(SQDs) composed of a GaAs quantum dot of nanoscale embedded in an AlAs shell of a few atomic layers in thickness. In SQDs with such thin shells, the basic principle of the continuum dielectric model and the macroscopic dielectric function are not valid any more. The frequencies of these microscopic interface modes lie inside the gap between the bulk GaAs band and the bulk AlAs band, contrary to the macroscopic interface phonon modes. The average vibrational energies and amplitudes of each atomic shell show peaks at the interface between GaAs and AlAs. These peaks decay fast as their penetrating depths from the interface increase.Comment: 13 pages, 4 figure

The thermal conductivity reduction in HgTe/CdTe superlattices

The techniques used previously to calculate the three-fold thermal conductivity reduction due to phonon dispersion in GaAs/AlAs superlattices (SLs) are applied to HgTe/CdTe SLs. The reduction factor is approximately the same, indicating that this SL may be applicable both as a photodetector and a thermoelectric cooler.Comment: 5 pages, 2 figures; to be published in Journal of Applied Physic

On equations over sets of integers

Systems of equations with sets of integers as unknowns are considered. It is shown that the class of sets representable by unique solutions of equations using the operations of union and addition S+T=\makeset{m+n}{m \in S, \: n \in T} and with ultimately periodic constants is exactly the class of hyper-arithmetical sets. Equations using addition only can represent every hyper-arithmetical set under a simple encoding. All hyper-arithmetical sets can also be represented by equations over sets of natural numbers equipped with union, addition and subtraction S \dotminus T=\makeset{m-n}{m \in S, \: n \in T, \: m \geqslant n}. Testing whether a given system has a solution is $\Sigma^1_1$-complete for each model. These results, in particular, settle the expressive power of the most general types of language equations, as well as equations over subsets of free groups.Comment: 12 apges, 0 figure

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.Comment: 11 pages, 7 figure

On Varieties of Ordered Automata

The Eilenberg correspondence relates varieties of regular languages to pseudovarieties of finite monoids. Various modifications of this correspondence have been found with more general classes of regular languages on one hand and classes of more complex algebraic structures on the other hand. It is also possible to consider classes of automata instead of algebraic structures as a natural counterpart of classes of languages. Here we deal with the correspondence relating positive $\mathcal C$-varieties of languages to positive $\mathcal C$-varieties of ordered automata and we present various specific instances of this correspondence. These bring certain well-known results from a new perspective and also some new observations. Moreover, complexity aspects of the membership problem are discussed both in the particular examples and in a general setting

The effects of interface morphology on Schottky barrier heights: a case study on Al/GaAs(001)

The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any structural distortions on the metal side---including elongations of the metal-semiconductor bond (i.e. interface strain)---whereas it strongly depends on the interface structure on the semiconductor side. A rationale for these findings is given in terms of the interface dipole generated by the ionic effective charges.Comment: 5 pages, latex file, 2 postscript figures automatically include

New Exclusion Limits for the Search of Scalar and Pseudoscalar Axion-Like Particles from "Light Shining Through a Wall"

Physics beyond the Standard Model predicts the possible existence of new particles that can be searched at the low energy frontier in the sub-eV range. The OSQAR photon regeneration experiment looks for "Light Shining through a Wall" from the quantum oscillation of optical photons into "Weakly Interacting Sub-eV Particles", such as axion or Axion-Like Particles (ALPs), in a 9 T transverse magnetic field over the unprecedented length of $2 \times 14.3$ m. In 2014, this experiment has been run with an outstanding sensitivity, using an 18.5 W continuous wave laser emitting in the green at the single wavelength of 532 nm. No regenerated photons have been detected after the wall, pushing the limits for the existence of axions and ALPs down to an unprecedented level for such a type of laboratory experiment. The di-photon couplings of possible pseudo-scalar and scalar ALPs can be constrained in the nearly massless limit to be less than $3.5\cdot 10^{-8}$ GeV$^{-1}$ and $3.2\cdot 10^{-8}$ GeV$^{-1}$, respectively, at 95% Confidence Level.Comment: 6 pages, 6 figure

Effect of pressure on the Raman modes of antimony

The effect of pressure on the zone-center optical phonon modes of antimony in the A7 structure has been investigated by Raman spectroscopy. The A_g and E_g frequencies exhibit a pronounced softening with increasing pressure, the effect being related to a gradual suppression of the Peierls-like distortion of the A7 phase relative to a cubic primitive lattice. Also, both Raman modes broaden significantly under pressure. Spectra taken at low temperature indicate that the broadening is at least partly caused by phonon-phonon interactions. We also report results of ab initio frozen-phonon calculations of the A_g and E_g mode frequencies. Presence of strong anharmonicity is clearly apparent in calculated total energy versus atom displacement relations. Pronounced nonlinearities in the force versus displacement relations are observed. Structural instabilities of the Sb-A7 phase are briefly addressed in the Appendix.Comment: 10 pages, 8 figure

Raman spectra of MgB2 at high pressure and topological electronic transition

Raman spectra of the MgB2 ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at ~590 cm-1 related to the E2g phonon mode. The frequency of this mode exhibits a strong linear dependence in the pressure region from 5 to 18 GPa, whereas beyond this region the slope of the pressure-induced frequency shift is reduced by about a factor of two. The pressure dependence of the phonon mode up to ~ 5GPa exhibits a change in the slope as well as a "hysteresis" effect in the frequency vs. pressure behavior. These singularities in the E2g mode behavior under pressure support the suggestion that MgB2 may undergo a pressure-induced topological electronic transition.Comment: 2 figure

Calculations on the Size Effects of Raman Intensities of Silicon Quantum Dots

Raman intensities of Si quantum dots (QDs) with up to 11,489 atoms (about 7.6 nm in diameter) for different scattering configurations are calculated. First, phonon modes in these QDs, including all vibration frequencies and vibration amplitudes, are calculated directly from the lattice dynamic matrix by using a microscopic valence force field model combined with the group theory. Then the Raman intensities of these quantum dots are calculated by using a bond-polarizability approximation. The size effects of the Raman intensity in these QDs are discussed in detail based on these calculations. The calculations are compared with the available experimental observation. We are expecting that our calculations can further stimulate more experimental measurements.Comment: 21 pages, 7 figure