Hooge's Constant of Carbon Nanotube Field Effect Transistors

The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air

Scattering mechanisms and Boltzmann transport in graphene

Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as well as analytical expressions for the dependence of conductivity on the dielectric constant of the substrate. We further examine the effect of ripples on the transport using a surface roughness model developed for semiconductor heterostructures. We find that close to the Dirac point, \sigma \sim n^\beta, where \beta=1,0,-2 for Coulomb, short-range and surface roughness respectively; implying that Coulomb scattering dominates over both short-range and surface roughness scattering at low density.Comment: To be published in Physica E as EP2DS-17 conference proceeding

Aligned Molecular Clouds towards SS433 and L=348.5 degrees; Possible Evidence for Galactic "Vapor Trail" Created by Relativistic Jet

We have carried out a detailed analysis of the NANTEN 12CO(J=1-0) dataset in two large areas of ~25 square degrees towards SS433 (l~40 degree) and of ~18 square degrees towards l~348.5 degree, respectively. We have discovered two groups of remarkably aligned molecular clouds at |b|~1--5 degree in the two regions. In SS433, we have detected 10 clouds in total, which are well aligned nearly along the axis of the X-ray jet emanating from SS433. These clouds have similar line-of-sight velocities of 42--56 km s^-1 and the total projected length of the feature is ~300 pc, three times larger than that of the X-ray jet, at a distance of 3 kpc. Towards l~348.5 degree, we have detected four clouds named as MJG348.5 at line-of-sight velocities of -80 -- -95 km s^-1 in V_LSR, which also show alignment nearly perpendicular to the Galactic plane. The total length of the feature is ~400 pc at a kinematic distance of 6 kpc. In the both cases, the CO clouds are distributed at high galactic latitudes where such clouds are very rare. In addition, their alignments and coincidence in velocity should be even rarer, suggesting that they are physically associated. We tested a few possibilities to explain these clouds, including protostellar outflows, supershells, and interactions with energetic jets. Among them, a favorable scenario is that the interaction between relativistic jet and the interstellar medium induced the formation of molecular clouds over the last ~10^5-6 yrs. It is suggested that the timescale of the relativistic jet may be considerably larger, in the order of 10^5-6 yrs, than previously thought in SS433. The driving engine of the jet is obviously SS433 itself in SS433, although the engine is not yet identified in MJG348.5 among possible several candidates detected in the X-rays and TeV gamma rays.Comment: 29 pages, 10 figures, already published in PASJ, 2008,60, 71

Transmission Line Impedance of Carbon Nanotube Thin Films for Chemical Sensing

We measure the resistance and frequency-dependent gate capacitance of carbon nanotube (CNT) thin films in ambient, vacuum, and under low-pressure (10E-6 torr) analyte environments. We model the CNT film as an RC transmission line and show that changes in the measured capacitance as a function of gate bias and analyte pressure are consistent with changes in the transmission line impedance due to changes in the CNT film resistivity alone; the electrostatic gate capacitance of the CNT film does not depend on gate voltage or chemical analyte adsorption. However, the CNT film resistance is enormously sensitive to low pressure analyte exposure.Comment: 14 pages, 4 figure

Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that acoustic phonon scattering[4-6] is indeed independent of n, and places an intrinsic limit on the resistivity in graphene of only 30 Ohm at room temperature (RT). At a technologically-relevant carrier density of 10^12 cm^-2, the mean free path for electron-acoustic phonon scattering is >2 microns, and the intrinsic mobility limit is 2x10^5 cm^2/Vs, exceeding the highest known inorganic semiconductor (InSb, ~7.7x10^4 cm^2/Vs[9]) and semiconducting carbon nanotubes (~1x10^5 cm^2/Vs[10]). We also show that extrinsic scattering by surface phonons of the SiO2 substrate[11,12] adds a strong temperature dependent resistivity above ~200 K[8], limiting the RT mobility to ~4x10^4 cm^2/Vs, pointing out the importance of substrate choice for graphene devices[13].Comment: 16 pages, 3 figure

A self-consistent theory for graphene transport

We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are not universal but depend on the concentration of charged impurities $n_{\rm imp}$. For dirty samples ($250 \times 10^{10} {\rm cm}^{-2} < n_{\rm imp} < 400 \times 10^{10} {\rm cm}^{-2}$), the value of the minimum conductivity at low carrier density is indeed $4 e^2/h$ in agreement with early experiments, with weak dependence on impurity concentration. For cleaner samples, we predict that the minimum conductivity depends strongly on $n_{\rm imp}$, increasing to $8 e^2/h$ for $n_{\rm imp} \sim 20 \times 10^{10}{\rm cm}^{-2}$. A clear strategy to improve graphene mobility is to eliminate charged impurities or use a substrate with a larger dielectric constant.Comment: To be published in Proc. Natl. Acad. Sci. US

Atomic Structure of Graphene on SiO2

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically-clean graphene sheets.Comment: 13 pages, 4 figure