SILVER nano-cylinders designed by EBL used as label free LSPR nano-biosensors

Localized Surface Plasmon Resonance (LSPR) is based on the electromagnetic-field enhancement of metallic nano-particles. It is observed at the metal-dielectric interface and the resonance wavelength can be tuned by the size, shape, and periodicity of the metallic nanoparticles and the surrounding dielectric environment. This makes LSPR a powerful candidate in bio-sensing. In the present work, the size and period dependency of the LSPR wavelength was studied through simulations and fabrications. The surface functionalization, that transforms the surface into a sensing platform was done and verified. Finally, the concentration dependency of the LSPR shifts was observed. All the measurements were done by a transmission set-up. The study is at an early stage, however results are promising. The detection of specific bacteria species can be made possible with such a detection method. © 2011 SPIE

Plasmonic nanoparticle based nanobiosensors and nanophotodetectors

Plasmonics mainly deals with light-matter interactions in metallic nanostructures. It has gathered interest since its discovery due to the benefits it provides when compared with photonics and electronics. It owes its popularity to the tremendous number of applications it serves for. In this paper, we review how plasmonic nanoparticles can be utilized in applications such as localized surface plasmon resonance based biosensing and enhancing performance of photodetectors. © 2013 SPIE

Investigation of trap states in AlInN/AlN/GaN heterostructures by frequency-dependent admittance analysis

We present a systematic study on the admittance characterization of surface trap states in unpassivated and SiN x -passivated Al 0.83In 0.17N/AlN/GaN heterostructures. C-V and G/ω-V measurements were carried out in the frequency range of 1 kHz to 1 MHz, and an equivalent circuit model was used to analyze the experimental data. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming models in which traps are located at the metal-AlInN surface. The density (D t) and time constant (τ t) of the surface trap states have been determined as a function of energy separation from the conduction-band edge (E c - E t). The D st and τ st values of the surface trap states for the unpassivated samples were found to be D st≅ (4 - 13)× 10 12 eV - 1 cm - 2 and τ st ≈ 3 μs to 7 μs, respectively. For the passivated sample, D st decreased to 1.5× 10 12eV - 1cm - 2 and τ st to 1.8 μs to 2 μs. The density of surface trap states in Al 0.83In 0.17N/AlN/GaN heterostructures decreased by approximately one order of magnitude with SiN x passivation, indicating that the SiN x insulator layer between the metal contact and the surface of the Al 0.83In 0.17N layer can passivate surface states. © 2010 TMS

Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors

Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE

Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height ( B0), series resistance (R s), interface-state density (N ss). The energy density distribution profiles of the N ss were obtained from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height ( e) and ideality factor (n V) of devices. In addition, the N ss as a function of E c-E ss was determined from the low-high frequency capacitance methods. It was found that the values of N ss and R s in SBD HEMTs decreases with increasing insulator layer thickness. © 2010 Elsevier Ltd. All rights reserved

Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes

The current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current transport mechanisms for (Ni/Au)-AlN/GaN SBDs, by taking the Js(tunnel), E 0, and Rs as adjustable fit parameters, the experimental J-V data were fitted to the analytical expressions given for the current transport mechanisms in a wide range of applied biases and at different temperatures. Fitting results show the weak temperature dependent behavior in the saturation current and the temperature independent behavior of the tunneling parameters in this temperature range. Therefore, it has been concluded that the mechanism of charge transport in (Ni/Au)-AlN/GaN SBDs, along the dislocations intersecting the space charge region, is performed by tunneling. In addition, in order to analyze the trapping effects in (Ni/Au)-AlN/GaN SBDs, the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics were measured in the frequency range 0.7-50 kHz. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming the models in which traps are located at the heterojunction interface. The density (Dt) and time constants (τt) of the trap states have been determined as a function of energy separation from the conduction-band edge (Ec - Et) as Dt≅ (5-8)×10 12eV-1 cm-2andτt≅(43-102) μs, respectively. © 2010 Elsevier Ltd. All rights reserved

End-group ionisation enables the use of poly(N-(2-methacryloyloxy)ethyl pyrrolidone) as an electrosteric stabiliser block for polymerisation-induced self-assembly in aqueous media

A series of near-monodisperse poly(N-2-(methacryloyloxy)ethyl pyrrolidone) (PNMEP) homopolymers was prepared via reversible addition-fragmentation chain transfer (RAFT) solution polymerisation of NMEP in ethanol at 70 °C using a carboxylic acid-functional RAFT agent. The mean degree of polymerisation (DP) was varied from 19 to 89 and acid titration indicated end-group pK a values of 5.07-5.44. Turbidimetry studies indicated that homopolymer cloud points were significantly higher at pH 7 (anionic carboxylate) than at pH 3 (neutral carboxylic acid). Moreover, this enhanced hydrophilic character enabled PNMEP to be used as a steric stabiliser for aqueous polymerisation-induced self-assembly (PISA) syntheses. Thus, a PNMEP 42 precursor was chain-extended via RAFT aqueous dispersion polymerisation of 2-hydroxypropyl methacrylate (HPMA) at 44 °C. A series of PNMEP 42 -PHPMA x diblock copolymers were synthesised using this protocol, with target PHPMA DPs of 150 to 400. High conversions were achieved and a linear evolution in M n with increasing PHPMA DP was observed. Dynamic light scattering (DLS) and transmission electron microscopy (TEM) studies confirmed a spherical morphology in all cases. The nanoparticles flocculated either below pH 4.5 (owing to protonation) or on addition of 60 mM KCl (as a result of charge screening). Thus the anionic end-groups on the PNMEP stabiliser chains make an important contribution to the overall colloidal stability. Similarly, a PNMEP 53 macro-CTA was chain-extended via RAFT aqueous emulsion polymerisation of 2-ethoxyethyl methacrylate (EEMA) at 44 °C. Again, a neutral solution pH was critical for the synthesis of colloidally stable nanoparticles. High conversions were achieved as the target PEEMA DP was varied between 100 and 600 and a linear evolution in molecular weight with PEEMA DP was confirmed by chloroform GPC studies. DLS experiments indicated a monotonic increase in nanoparticle diameter with PEEMA DP and TEM studies confirmed a spherical morphology in each case. In summary, PNMEP can be used as a water-soluble steric stabiliser for aqueous PISA syntheses provided that it contains an anionic carboxylate end-group to enhance its hydrophilic character

SiC Substrate effects on electron transport in the epitaxial graphene layer

Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one high-mobility carrier (3493 cm2/Vs at 300 K) and one low-mobility carrier (1115 cm2/Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate. © 2014 The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht