The Ingalls-Thomas Bijections

Given a finite acyclic quiver Q with path algebra kQ, Ingalls and Thomas have exhibited a bijection between the set of Morita equivalence classes of support-tilting modules and the set of thick subcategories of mod kQ and they have collected a large number of further bijections with these sets. We add some additional bijections and show that all these bijections hold for arbitrary hereditary artin algebras. The proofs presented here seem to be of interest also in the special case of the path algebra of a quiver.Comment: This is a modified version of an appendix which was written for the paper "The numbers of support-tilting modules for a Dynkin algebra" (see arXiv:1403.5827v1

Effects of plasma hydrogenation on trapping properties of dislocations in heteroepitaxial InP/GaAs

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells

Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples

Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration

Direct Measurement of Quantum Confinement Effects at Metal to Quantum-Well Nanocontacts

Model metal-semiconductor nanostructure Schottky nanocontacts were made on cleaved heterostructures containing GaAs quantum wells (QWs) of varying width and were locally probed by ballistic electron emission microscopy. The local Schottky barrier was found to increase by ∼0.140 eV as the QW width was systematically decreased from 15 to 1 nm, due mostly to a large (∼0.200 eV) quantum-confinement increase to the QW conduction band. The measured barrier increase over the full 1 to 15 nm QW range was quantitatively explained when local "interface pinning" and image force lowering effects are also considered

The rising burden of spondylodiscitis in Germany: an epidemiologic study based on the federal statistical office database [Abstract]

Introduction: Spondylodiscitis is the commonest form of infectious disease of the spine and harbours a high mortality rate of up to 20%. Recent demographic trends in Germany, such as an aging population, immunosuppression, and intravenous drug use, suggest that the incidence of spondylodiscitis may be on the rise. However, the exact epidemiological development of the disease remains uncertain. This study aims to analyse the burden on the tertiary healthcare system in Germany using data from the Federal Statistical Office of Germany (FSOG) database. Materials and Methods: All cases of spondylodiscitis diagnosed between 2005 and 2021 were identified from the FSOG database. The study characterised the mean duration of hospital stays, total and population-adjusted number of diagnoses made, age-stratified incidence, and outcomes of hospitalised patients. Results: A total of 131,982 diagnoses for spondylodiscitis were identified between 2005 and 2021. The number of diagnoses for spondylodiscitis has doubled during this period, from 5.4/100,000 population in 2005 to 11/100,000 population in 2021. The highest increase in admissions was recorded for those aged 90 years and above (+1307%), 80-89 (+376%) and 70-79 (+99%). Hospital discharges to rehabilitation facilities have increased by 160%, and discharges against medical advice by 91%. On the other hand, during the analysed period, the in-hospital mortality rate has decreased by 52%. Conclusion: The population-adjusted incidence of spondylodiscitis in Germany has more than doubled between 2005 and 2021, highlighting the clinical relevance of this disease. During the same period, in-hospital mortality dropped by half. These findings suggest the need for further investigation into optimal therapy, particularly the role and timing of surgical treatment

Applications of BGP-reflection functors: isomorphisms of cluster algebras

Given a symmetrizable generalized Cartan matrix $A$, for any index $k$, one can define an automorphism associated with $A,$ of the field $\mathbf{Q}(u_1, >..., u_n)$ of rational functions of $n$ independent indeterminates $u_1,..., u_n.$ It is an isomorphism between two cluster algebras associated to the matrix $A$ (see section 4 for precise meaning). When $A$ is of finite type, these isomorphisms behave nicely, they are compatible with the BGP-reflection functors of cluster categories defined in [Z1, Z2] if we identify the indecomposable objects in the categories with cluster variables of the corresponding cluster algebras, and they are also compatible with the "truncated simple reflections" defined in [FZ2, FZ3]. Using the construction of preprojective or preinjective modules of hereditary algebras by Dlab-Ringel [DR] and the Coxeter automorphisms (i.e., a product of these isomorphisms), we construct infinitely many cluster variables for cluster algebras of infinite type and all cluster variables for finite types.Comment: revised versio