On the Fekete-Szeg\"o problem for concave univalent functions

We consider the Fekete-Szeg\"o problem with real parameter $\lambda$ for the class $Co(\alpha)$ of concave univalent functions.Comment: 9 page

Process Modules for GeSn Nanoelectronics with high Sn-contents

This paper systematically studies GeSn n-FETs, from individual process modules to a complete device. High-k gate stacks and NiGeSn metallic contacts for source and drain are characterized in independent experiments. To study both direct and indirect bandgap semiconductors, a range of 0 at.% to 14.5 at.% Sn-content GeSn alloys are investigated. Special emphasis is placed on capacitance-voltage (C-V) characteristics and Schottky-barrier optimization. GeSn n-FET devices are presented including temperature dependent I-V characteristics. Finally, as an important step towards implementing GeSn in tunnel-FETs, negative differential resistance in Ge0.87Sn0.13 tunnel-diodes is demonstrated at cryogenic temperatures. The present work provides a base for further optimization of GeSn FETs and novel tunnel FET devices

Optical Transitions in Direct-Bandgap Ge1-xSnx Alloys

A comprehensive study of optical transitions in direct-bandgap Ge0.875Sn0.125 group IV alloys via photoluminescence measurements as a function of temperature, compressive strain and excitation power is performed. The analysis of the integrated emission intensities reveals a strain-dependent indirect-to-direct bandgap transition, in good agreement with band structure calculations based on the 8-band k·p and deformation potential methods. We have observed and quantified Γ valley-heavy hole and Γ valley-light hole transitions at low pumping power and low temperatures in order to verify the splitting of the valence band due to strain. We will demonstrate that the intensity evolution of these transitions supports the conclusion about the fundamental direct bandgap in compressively strained GeSn alloys. The presented investigation, thus, demonstrates that direct-bandgap group IV alloys can be directly grown on Ge-buffered Si(001) substrates despite their residual compressive strain

Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si

The experimental demonstration of fundamental direct bandgap, group IV GeSn alloys has constituted an important step towards realization of the last missing ingredient for electronic-photonic integrated circuits, i.e. the e cient group IV laser source. In this contribution, we present electroluminescence studies of reduced-pressure CVD grown, direct bandgap GeSn light emitting diodes (LEDs) with Sn contents up to 11 at.%. Besides homojunction GeSn LEDs, complex heterojunction structures, such as GeSn/Ge multi quantum wells (MQWs) have been studied. Structural and compositional investigations con rm high crystalline quality, abrupt interfaces and tailored strain of the grown structures. While also being suitable for light absorption applications, all devices show light emission in a narrow short-wave infrared (SWIR) range. Temperature dependent electroluminescence (EL) clearly indicates a fundamentally direct bandgap in the 11 at.% Sn sample, with room temperature emission at around 0.55 eV (2.25 m). We have, however, identi ed some limitations of the GeSn/Ge MQW approach regarding emission e ciency, which can be overcome by introducing SiGeSn ternary alloys as quantum con nement barriers

GeSn lasers for CMOS integration

In search of a suitable CMOS compatible light source many routes and materials are under investigation. Si-based group IV (Si)GeSn alloys offer a tunable bandgap from indirect to direct, making them ideal candidates for on-chip photonics and nano-electronics. An overview of recent achievements in material growth and device developments will be given. Optically pumped waveguide and microdisk structures with different strain and various Sn concentrations provide direct evidence of gain in these alloys and the width of the emission wavelength range that can be covered. Towards the aim of electrically pumped lasers, a set of different homojunction light emitting diodes and more complex heterostructure SiGeSn/GeSn LEDs is presented. Detailed investigation of electroluminescence spectra indicate that GeSn/SiGeSn heterostructures will be advantageous for future laser fabrication

Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform

We report on the first experimental demonstration of direct bandgap group IV GeSn microdisk (MD) lasers (λem=2.5 μm) grown on Si(001). The evidence of lasing is supported by a detailed analysis of strain-dependent emission characteristics of GeSn alloys with xSn ≥ 12 at.%. Residual compressive strain within the layer is relieved via under-etching of the MD enabling increased energy offsets up to EL-EΓ=80 meV. The lasing threshold and max. temperature amount to 220 kW/cm2 and 135 K, respectively