796 research outputs found

    Full counting statistics of chaotic cavities with many open channels

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    Explicit formulas are obtained for all moments and for all cumulants of the electric current through a quantum chaotic cavity attached to two ideal leads, thus providing the full counting statistics for this type of system. The approach is based on random matrix theory, and is valid in the limit when both leads have many open channels. For an arbitrary number of open channels we present the third cumulant and an example of non-linear statistics.Comment: 4 pages, no figures; v2-added references; typos correcte

    Radiation effects on silicon solar cells Final report, Dec. 1, 1961 - Dec. 31, 1962

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    Displacement defects in silicon solar cells by high energy electron irradiation using electron spin resonance, galvanometric, excess carrier lifetime, and infrared absorption measurement

    Sibling Rivalry among Paralogs Promotes Evolution of the Human Brain

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    Geneticists have long sought to identify the genetic changes that made us human, but pinpointing the functionally relevant changes has been challenging. Two papers in this issue suggest that partial duplication of SRGAP2, producing an incomplete protein that antagonizes the original, contributed to human brain evolution

    Stated choices and simulated experiences: Differences in the value of travel time and reliability

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    Surveys with stated choice experiments (SCE) are widely used to derive values of time and reliability for transport project appraisal purposes. However, such methods ask respondents to make hypothetical choices, which in turn could create a bias between choices made in the experiment compared to those in an environment where the choices have consequence. In this paper, borrowing principles of experimental economics, we introduce an incentive compatible driving simulator experiment, where participants are required to experience the travel time of their chosen route and actually pay any toll costs associated with the choice of a tolled road. In a first for the literature, we use a within respondent design to compare both the value of travel time savings (VTT) and value of travel time reliability (VOR) across a typical SCE and an environment with simulated consequence. Given the importance of VTT and VOR to transport decision making and the difficulty in estimating VOR using revealed preference data, our results are noteworthy and emphasise that more research on this topic is imperative. We provide suggestions on how the results herein may be used in future studies, to potentially reduce hypothetical bias that may be exhibited in SCE

    Degeneracy Algorithm for Random Magnets

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    It has been known for a long time that the ground state problem of random magnets, e.g. random field Ising model (RFIM), can be mapped onto the max-flow/min-cut problem of transportation networks. I build on this approach, relying on the concept of residual graph, and design an algorithm that I prove to be exact for finding all the minimum cuts, i.e. the ground state degeneracy of these systems. I demonstrate that this algorithm is also relevant for the study of the ground state properties of the dilute Ising antiferromagnet in a constant field (DAFF) and interfaces in random bond magnets.Comment: 17 pages(Revtex), 8 Postscript figures(5color) to appear in Phys. Rev. E 58, December 1st (1998

    Maximum principle and mutation thresholds for four-letter sequence evolution

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    A four-state mutation-selection model for the evolution of populations of DNA-sequences is investigated with particular interest in the phenomenon of error thresholds. The mutation model considered is the Kimura 3ST mutation scheme, fitness functions, which determine the selection process, come from the permutation-invariant class. Error thresholds can be found for various fitness functions, the phase diagrams are more interesting than for equivalent two-state models. Results for (small) finite sequence lengths are compared with those for infinite sequence length, obtained via a maximum principle that is equivalent to the principle of minimal free energy in physics.Comment: 25 pages, 16 figure

    A unified approach to combinatorial key predistribution schemes for sensor networks

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    There have been numerous recent proposals for key predistribution schemes for wireless sensor networks based on various types of combinatorial structures such as designs and codes. Many of these schemes have very similar properties and are analysed in a similar manner. We seek to provide a unified framework to study these kinds of schemes. To do so, we define a new, general class of designs, termed “partially balanced t-designs”, that is sufficiently general that it encompasses almost all of the designs that have been proposed for combinatorial key predistribution schemes. However, this new class of designs still has sufficient structure that we are able to derive general formulas for the metrics of the resulting key predistribution schemes. These metrics can be evaluated for a particular scheme simply by substituting appropriate parameters of the underlying combinatorial structure into our general formulas. We also compare various classes of schemes based on different designs, and point out that some existing proposed schemes are in fact identical, even though their descriptions may seem different. We believe that our general framework should facilitate the analysis of proposals for combinatorial key predistribution schemes and their comparison with existing schemes, and also allow researchers to easily evaluate which scheme or schemes present the best combination of performance metrics for a given application scenario

    The propagator for the step potential and delta function potential using the path decomposition expansion

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    We present a derivation of the propagator for a particle in the presence of the step and delta function potentials. These propagators are known, but we present a direct path integral derivation, based on the path decomposition expansion and the Brownian motion definition of the path integral. The derivation exploits properties of the Catalan numbers, which enumerate certain classes of lattice paths.Comment: 11 pages, 3 figure

    Signal and noise of Diamond Pixel Detectors at High Radiation Fluences

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    CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in comparison with silicon at fluences in excess of 1015^{15} neq_{eq} cm2^{-2}, which are expected for the LHC upgrade, is important. Based on measurements of irradiated diamond sensors and the FE-I4 pixel readout chip design, we determine the signal and the noise of diamond pixel detectors irradiated with high particle fluences. To characterize the effect of the radiation damage on the materials and the signal decrease, the change of the mean free path λe/h\lambda_{e/h} of the charge carriers is determined as a function of irradiation fluence. We make use of the FE-I4 pixel chip developed for ATLAS upgrades to realistically estimate the expected noise figures: the expected leakage current at a given fluence is taken from calibrated calculations and the pixel capacitance is measured using a purposely developed chip (PixCap). We compare the resulting S/N figures with those for planar silicon pixel detectors using published charge loss measurements and the same extrapolation methods as for diamond. It is shown that the expected S/N of a diamond pixel detector with pixel pitches typical for LHC, exceeds that of planar silicon pixels at fluences beyond 1015^{15} particles cm2^{-2}, the exact value only depending on the maximum operation voltage assumed for irradiated silicon pixel detectors
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