169 research outputs found
Properties of InGaN deposited on Glass at Low Temperature
We have investigated the properties of InGaN grown at low temperature on glass substrates by a plasma enhanced MBE process. The goal of this study was to evaluate the potential of InGaN as an oxide-free, transparent conductor material which could be deposited at or slightly above room temperature with minimal interaction or damage to the underlying material. InxGa1−xN films deposited on glass, even without substrate heating, are highly crystalline, but the crystallinity as measured by x-ray degrades at x 0.5) is conductive due to its high electron concentration. InN electron Hall mobilities > 20 cm2/Vs when grown at 400°C, and ~ 7 cm2/Vs on unheated substrates were obtained. The addition of GaN degraded the electrical properties of the films to a greater extent than it improved the transparency. As a result, the best transparent conductor films were pure InN which, when deposited at 400°C, were half as transparent in the green as an indium tin oxide film having the same sheet resistanc
Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
We investigated the properties of ion-implanted GaN:Zn annealed under various conditions using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD). Epitaxial GaN/sapphire of high optical quality was ion-implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV. The sample was capped with 200 Å of SiNx and then diced into numerous pieces which were annealed under varied conditions in an attempt to optically activate the Zn. Annealing was performed in a tube furnace under flowing N2, an atmospheric pressure MOCVD reactor under flowing NH3 or N2, and under an N2 overpressure of 190 atm. The observed improvement in the optical quality of GaN:Zn annealed under N2 overpressure yields further insights into the trade-off between defect annealing and N loss from the GaN crysta
Raman spectroscopy of InN films grown on Si
We have used Raman spectroscopy to study indium nitride thin films grown by
molecular beam epitaxy on (111) silicon substrates at temperatures between 450
and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591
cm{-1}, which correspond to the A_1(TO), E_1(TO), E_2^{high}, and A_1(LO)
phonons of the wurtzite structure, respectively. In backscattering normal to
the surface the A_1(TO) and E_1(TO) peaks are very weak, indicating that the
films grow along the hexagonal c axis. The dependence of the peak width on
growth temperature reveals that the optimum temperature is 500 C, for which the
fullwidth of the E_2^{high} peak has the minimum value of 7 cm{-1}. This small
value, comparable to previous results for InN films grown on sapphire, is
evidence of the good crystallinity of the films.Comment: 3 pages, 1 eps figure, RevTe
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
We continue our investigations into the optical activation of Zn-implanted GaN annealed under ever higher N2 overpressure. The samples studied were epitaxial GaN/sapphire layers of good optical quality which were implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV, diced into equivalent pieces and annealed under 10 kbar of N2. The N2 overpressure permitted annealing at temperatures up to 1250°C for 1 hr without GaN decomposition. The blue Zn-related photoluminescence (PL) signal rises sharply with increasing anneal temperature. The Zn-related PL intensity in the implanted sample annealed at 1250°C exceeded that of the epitaxially doped GaN:Zn standard proving that high temperature annealing of GaN under kbar N2 overpressure can effectively remove implantation damage and efficiently activate implanted dopants in GaN. We propose a lateral LED device which could be fabricated using ion implanted dopants activated by high temperature annealing at high pressur
Direct SIMS Determination of the InxGa1-xN Mole Fraction
We demonstrate that our secondary mass ion spectroscopy (SIMS) method for the determination of the mole fraction in solid InxGa1-xN solutions is accurate and reproduceable without need of reference samples. The method is based on measuring relative current values of CsM+ (M=Ga, In) secondary ions. The claim of reliable SIMS determination without reference samples was confirmed by four independent analytical methods on the same samples with a relative error in the InN mole fraction determination below 15
Acceptor binding energies in GaN and AlN
We employ effective mass theory for degenerate hole-bands to calculate the
acceptor binding energies for Be, Mg, Zn, Ca, C and Si substitutional acceptors
in GaN and AlN. The calculations are performed through the 66
Rashba-Sheka-Pikus and the Luttinger-Kohn matrix Hamiltonians for wurtzite (WZ)
and zincblende (ZB) crystal phases, respectively. An analytic representation
for the acceptor pseudopotential is used to introduce the specific nature of
the impurity atoms. The energy shift due to polaron effects is also considered
in this approach. The ionization energy estimates are in very good agreement
with those reported experimentally in WZ-GaN. The binding energies for ZB-GaN
acceptors are all predicted to be shallower than the corresponding impurities
in the WZ phase. The binding energy dependence upon the crystal field splitting
in WZ-GaN is analyzed. Ionization levels in AlN are found to have similar
`shallow' values to those in GaN, but with some important differences, which
depend on the band structure parameterizations, especially the value of crystal
field splitting used.Comment: REVTEX file - 1 figur
Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer
The adsorption of CO molecule on pristine, As, B, BAs doped (4, 4) armchair AlNNTs: a computational study
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