Coherent spin transport through a 350-micron-thick Silicon wafer

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500ns at 60K.Comment: Accepted in PR

How Good Is the Samaritan, and Why?

What is the extent and nature of religious prosociality? If religious prosociality exists, is it parochial and extended selectively to co-religionists, or is it generalized regardless of the recipient? Further, is it driven by preferences to help others or by expectations of reciprocity? We examined how much of a $0.30 bonus Mechanical Turk workers would share with the other player whose religion was prominently displayed during two online resource allocation games. In one game (but not the other), the recipient could choose to reciprocate. Results from both games showed that the more central religion was in participants’ lives, the more of the bonus they shared, regardless of whether they were giving to atheists or Christians. Furthermore, this effect was most clearly related to self-reported frequency of “thinking about religious ideas”, rather than belief in God or religious practice/experience. Our findings provide evidence of generalized religious prosociality and illuminate its basis

Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunneling Spectroscopy

Co islands grown on Cu(111) with a stacking fault at the interface present a conductance in the empty electronic states larger than the Co islands that follow the stacking sequence of the Cu substrate. Electrons can be more easily injected into these faulted interfaces, providing a way to enhance transmission in future spintronic devices. The electronic states associated to the stacking fault are visualized by tunneling spectroscopy and its origin is identified by band structure calculations.Comment: 4 pages, 4 figures; to be published in Phys. Rev. Lett (2000

Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions

Epitaxial thin films of the theoretically predicted half metal Co2Cr0.6Fe0.4Al were deposited by dc magnetron sputtering on different substrates and buffer layers. The samples were characterized by x-ray and electron beam diffraction (RHEED) demonstrating the B2 order of the Heusler compound with only a small partition of disorder on the Co sites. Magnetic tunneling junctions with Co2Cr0.6Fe0.4Al electrode, AlOx barrier and Co counter electrode were prepared. From the Julliere model a spin polarisation of Co2Cr0.6Fe0.4Al of 54% at T=4K is deduced. The relation between the annealing temperature of the Heusler electrodes and the magnitude of the tunneling magnetoresistance effect was investigated and the results are discussed in the framework of morphology and surface order based of in situ STM and RHEED investigations.Comment: accepted by J. Phys. D: Appl. Phy

Direct electronic measurement of the spin Hall effect

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling, which couples the spin of an electron to its momentum, is attracting considerable interest. In a spin-orbit-coupled system, a nonzero spin-current is predicted in a direction perpendicular to the applied electric field, giving rise to a "spin Hall effect"[2-4]. Consistent with this effect, electrically-induced spin polarization was recently detected by optical techniques at the edges of a semiconductor channel[5] and in two-dimensional electron gases in semiconductor heterostructures[6,7]. Here we report electrical measurements of the spin-Hall effect in a diffusive metallic conductor, using a ferromagnetic electrode in combination with a tunnel barrier to inject a spin-polarized current. In our devices, we observe an induced voltage that results exclusively from the conversion of the injected spin current into charge imbalance through the spin Hall effect. Such a voltage is proportional to the component of the injected spins that is perpendicular to the plane defined by the spin current direction and the voltage probes. These experiments reveal opportunities for efficient spin detection without the need for magnetic materials, which could lead to useful spintronics devices that integrate information processing and data storage.Comment: 5 pages, 4 figures. Accepted for publication in Nature (pending format approval

Systematic Two-band Model Calculations of the GMR Effect with Metallic and Nonmetallic Spacers and with Impurities

By an accurate Green's function method we calculate conductances and the corresponding Giant Magneto-Resistance effects (GMR) of two metallic ferromagnetic films separated by different spacers, metallic and non-metallic ones, in a simplified model on a sc lattice, in CPP and CIP geometries (i.e. current perpendicular or parallel to the planes), without impurities, or with interface- or bulk impurities. The electronic structure of the systems is approximated by two hybridized orbitals per atom, to mimic s-bands and d-bands and their hybridization. We show that such calculations usually give rough estimates only, but of the correct order of magnitude; in particular, the predictions on the impurity effects depend strongly on the model parameters. One of our main results is the prediction of huge CPP-GMR effects for {\it non-metallic} spacers in the ballistic limit.Comment: Revised version; discussions and references improved; accepted by JMM

Spin Electronics and Spin Computation

We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and our recent proposal of an all-semiconductor spin transistor and a spin battery. We also address some key issues in spin-polarized transport, which are relevant to the feasibility and operation of hybrid semiconductor devices. Finally, we discuss a more radical aspect of spintronic research--the spin-based quantum computation and quantum information processing.Comment: 17 pages, 3 figure

Spin injection and spin accumulation in all-metal mesoscopic spin valves

We study the electrical injection and detection of spin accumulation in lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, permalloy (Py), cobalt (Co) and nickel (Ni), are used as electrical spin injectors and detectors. For the nonmagnetic metal both aluminium (Al) and copper (Cu) are used. Our multi-terminal geometry allows us to experimentally separate the spin valve effect from other magneto resistance signals such as the anomalous magneto resistance (AMR) and Hall effects. We find that the AMR contribution of the ferromagnetic contacts can dominate the amplitude of the spin valve effect, making it impossible to observe the spin valve effect in a 'conventional' measurement geometry. In a 'non local' spin valve measurement we are able to completely isolate the spin valve signal and observe clear spin accumulation signals at T=4.2 K as well as at room temperature (RT). For aluminum we obtain spin relaxation lengths (lambda_{sf}) of 1.2 mu m and 600 nm at T=4.2 K and RT respectively, whereas for copper we obtain 1.0 mu m and 350 nm. The spin relaxation times tau_{sf} in Al and Cu are compared with theory and results obtained from giant magneto resistance (GMR), conduction electron spin resonance (CESR), anti-weak localization and superconducting tunneling experiments. The spin valve signals generated by the Py electrodes (alpha_F lambda_F=0.5 [1.2] nm at RT [T=4.2 K]) are larger than the Co electrodes (alpha_F lambda_F=0.3 [0.7] nm at RT [T=4.2 K]), whereas for Ni (alpha_F lambda_F<0.3 nm at RT and T=4.2 K) no spin signal is observed. These values are compared to the results obtained from GMR experiments.Comment: 16 pages, 12 figures, submitted to PR

Reduction of the Three Dimensional Schrodinger Equation for Multilayered Films

In this paper, we present a method for reducing the three dimensional Schrodinger equation to study confined metallic states, such as quantum well states, in a multilayer film geometry. While discussing some approximations that are employed when dealing with the three dimensionality of the problem, we derive a one dimensional equation suitable for studying such states using an envelope function approach. Some applications to the Cu/Co multilayer system with regard to spin tunneling/rotations and angle resolved photoemission are discussed.Comment: 14 pages, 1 figur