218 research outputs found
Design and cryogenic operation of a hybrid quantum-CMOS circuit
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit
quantum effects like Coulomb blockade or single-dopant transport at low
temperature. The same process also yields excellent field-effect transistors
(FETs) for larger dimensions, allowing to design integrated circuits. Using the
same process, we have co-integrated a FET-based ring oscillator circuit
operating at cryogenic temperature which generates a radio-frequency (RF)
signal on the gate of a nanoscale device showing Coulomb oscillations. We
observe rectification of the RF signal, in good agreement with modeling
A CMOS silicon spin qubit
Silicon, the main constituent of microprocessor chips, is emerging as a
promising material for the realization of future quantum processors. Leveraging
its well-established complementary metal-oxide-semiconductor (CMOS) technology
would be a clear asset to the development of scalable quantum computing
architectures and to their co-integration with classical control hardware. Here
we report a silicon quantum bit (qubit) device made with an industry-standard
fabrication process. The device consists of a two-gate, p-type transistor with
an undoped channel. At low temperature, the first gate defines a quantum dot
(QD) encoding a hole spin qubit, the second one a QD used for the qubit
readout. All electrical, two-axis control of the spin qubit is achieved by
applying a phase-tunable microwave modulation to the first gate. Our result
opens a viable path to qubit up-scaling through a readily exploitable CMOS
platform.Comment: 12 pages, 4 figure
Pauli spin blockade in CMOS double quantum dot devices
Silicon quantum dots are attractive candidates for the development of
scalable, spin-based qubits. Pauli spin blockade in double quantum dots
provides an efficient, temperature independent mechanism for qubit readout.
Here we report on transport experiments in double gate nanowire transistors
issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low
temperature the devices behave as two few-electron quantum dots in series. We
observe signatures of Pauli spin blockade with a singlet-triplet splitting
ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that
transitions which conserve spin are shown to be magnetic-field independent up
to B = 6 T.Comment: 5 pages , 4 figure
Synaptoproteomic analysis of a rat gene-environment model of depression reveals involvement of energy metabolism and cellular remodeling pathways
Major depression is a severe mental illness that causes heavy social and economic burden worldwide. A number of studies have shown that interaction between individual genetic vulnerability and environmental risk factors, such as stress, is crucial in psychiatric pathophysiology. In particular, the experience of stressful events in childhood, such as neglect, abuse or parent loss, was found to increase the risk for development of depression in adult life. Here, to reproduce the gene x environment interaction, we employed an animal model that combines genetic vulnerability with early-life stress
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