698 research outputs found
Fabrication of Atomically Precise Nanopores in Hexagonal Boron Nitride
We demonstrate the fabrication of individual nanopores in hexagonal boron
nitride (hBN) with atomically precise control of the pore size. Previous
methods of pore production in other 2D materials create pores of irregular
geometry with imprecise diameters. By taking advantage of the preferential
growth of boron vacancies in hBN under electron beam irradiation, we are able
to observe the pore growth via transmission electron microscopy, and terminate
the process when the pore has reached its desired size. Careful control of beam
conditions allows us to nucleate and grow individual triangular and hexagonal
pores with diameters ranging from subnanometer to 6nm over a large area of
suspended hBN using a conventional TEM. These nanopores could find application
in molecular sensing, DNA sequencing, water desalination, and molecular
separation. Furthermore, the chemical edge-groups along the hBN pores can be
made entirely nitrogen terminated or faceted with boron-terminated edges,
opening avenues for tailored functionalization and extending the applications
of these hBN nanopores.Comment: 5 pages, 6 figure
Local formation of nitrogen-vacancy centers in diamond by swift heavy ions
We exposed nitrogen-implanted diamonds to beams of swift uranium and gold
ions (~1 GeV) and find that these irradiations lead directly to the formation
of nitrogen vacancy (NV) centers, without thermal annealing. We compare the
photoluminescence intensities of swift heavy ion activated NV- centers to those
formed by irradiation with low-energy electrons and by thermal annealing. NV-
yields from irradiations with swift heavy ions are 0.1 of yields from low
energy electrons and 0.02 of yields from thermal annealing. We discuss possible
mechanisms of NV-center formation by swift heavy ions such as electronic
excitations and thermal spikes. While forming NV centers with low efficiency,
swift heavy ions enable the formation of three dimensional NV- assemblies over
relatively large distances of tens of micrometers. Further, our results show
that NV-center formation is a local probe of (partial) lattice damage
relaxation induced by electronic excitations from swift heavy ions in diamond.Comment: to be published in Journal of Applied Physic
Effects of low energy electron irradiation on formation of nitrogen-vacancy centers in single-crystal diamond
Exposure to beams of low energy electrons (2 to 30 keV) in a scanning
electron microscope locally induces formation of NV-centers without thermal
annealing in diamonds that have been implanted with nitrogen ions. We find that
non-thermal, electron beam induced NV-formation is about four times less
efficient than thermal annealing. But NV-center formation in a consecutive
thermal annealing step (800C) following exposure to low energy electrons
increases by a factor of up to 1.8 compared to thermal annealing alone. These
observations point to reconstruction of nitrogen-vacancy complexes induced by
electronic excitations from low energy electrons as an NV-center formation
mechanism and identify local electronic excitations as a means for spatially
controlled room-temperature NV-center formation
Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride
Light emitters in wide band gap semiconductors are of great fundamental
interest and have potential as optically addressable qubits. Here we describe
the discovery of a new color center in high-quality hexagonal boron nitride
(h-BN) with a sharp emission line at 435 nm. The emitters are activated and
deactivated by electron beam irradiation and have spectral and temporal
characteristics consistent with atomic color centers weakly coupled to lattice
vibrations. The emitters are conspicuously absent from commercially available
h-BN and are only present in ultra-high-quality h-BN grown using a
high-pressure, high-temperature Ba-B-N flux/solvent, suggesting that these
emitters originate from impurities or related defects specific to this unique
synthetic route. Our results imply that the light emission is activated and
deactivated by electron beam manipulation of the charge state of an
impurity-defect complex
Alternative Stacking Sequences in Hexagonal Boron Nitride
The relative orientation of successive sheets, i.e. the stacking sequence, in
layered two-dimensional materials is central to the electronic, thermal, and
mechanical properties of the material. Often different stacking sequences have
comparable cohesive energy, leading to alternative stable crystal structures.
Here we theoretically and experimentally explore different stacking sequences
in the van der Waals bonded material hexagonal boron nitride (h-BN). We examine
the total energy, electronic bandgap, and dielectric response tensor for five
distinct high symmetry stacking sequences for both bulk and bilayer forms of
h-BN. Two sequences, the generally assumed AA' sequence and the relatively
unknown (for h-BN) AB (Bernal) sequence, are predicted to have comparably low
energy. We present a scalable modified chemical vapor deposition method that
produces large flakes of virtually pure AB stacked h-BN; this new material
complements the generally available AA' stacked h-BN
Toward efficient synthesis of porous all-carbon-based nanocomposites for enantiospecific separation
Chiral separation and asymmetric synthesis and catalysis are crucial processes for obtaining enantiopure compounds, which are especially important in the pharmaceutical industry. The efficiency of the separation processes is readily increased by using porous materials as the active material can interact with a larger surface area. Silica, metalâorganic frameworks, or chiral polymers are versatile porous materials that are established in chiral applications, but their instability under certain conditions in some cases requires the use of more stable porous materials such as carbons. In addition to their stability, porous carbon materials can be tailored for their ability to adsorb and catalytically activate different chemical compounds from the liquid and the gas phase. The difficulties imposed by the functionalization of carbons with chiral species were tackled in the past by carbonizing chiral ionic liquids (CILs) together with a template to create pores, which results in the entire body of a material that is built up from the precursor. To increase the atomic efficiency of ionic liquids for better economic utilization of CILs, the approach presented here is based on the formation of a composite between CIL-derived chiral carbon and a pristine carbon material obtained from carbohydrate precursors. Two novel enantioselective carbon composite materials are applied for the chiral recognition of molecules in the gas phase, as well as in solution. The enantiomeric ratio of the l-composite for phenylalanine from the solution was (L/D) = 8.4, and for 2-butanol from the gas phase, it was (S/R) = 1.3. The d-composite showed an opposite behavior, where the enantiomeric ratio for phenylalanine was (D/L) = 2.7, and for 2-butanol from the gas phase, it was (R/S) = 1.3
Electron Beam-Induced Nanopores in Bernal-Stacked Hexagonal Boron Nitride
Controlling the size and shape of nanopores in two-dimensional materials is a
key challenge in applications such as DNA sequencing, sieving, and quantum
emission in artificial atoms. We here investigate experimentally and
theoretically triangular vacancies in (unconventional) Bernal-stacked AB-h-BN
formed using a high-energy electron beam. Due to the geometric configuration of
AB-h-BN, triangular pores in different layers are aligned, and their sizes are
controlled by the duration of the electron irradiation. Interlayer covalent
bonding at the vacancy edge is not favored, as opposed to what occurs in the
more common AA'-stacked BN. A variety of monolayer, concentric and bilayer
pores in bilayer AB-h-BN are observed in high-resolution transmission electron
microscopy and characterized using ab initio simulations. Bilayer pores in
AB-h-BN are commonly formed, and grow without breaking the bilayer character.
Nanopores in AB-h-BN exhibit a wide range of electronic properties, ranging
from half-metallic to non-magnetic and magnetic semiconducting. Therefore,
because of the controllability of the pore size, the electronic structure is
also highly controllable in these systems, and can potentially be tuned for
particular applications
Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110)
The atomic and electronic structure of positively charged P vacancies on
InP(110) surfaces is determined by combining scanning tunneling microscopy,
photoelectron spectroscopy, and density-functional theory calculations. The
vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge
transfer level 0.75+-0.1 eV above the valence band maximum. The scanning
tunneling microscopy (STM) images show only a time average of two degenerate
geometries, due to a thermal flip motion between the mirror configurations.
This leads to an apparently symmetric STM image, although the ground state
atomic structure is nonsymmetric.Comment: 5 pages including 3 figures. related publications can be found at
http://www.fhi-berlin.mpg.de/th/paper.htm
Carbon-assisted chemical vapor deposition of hexagonal boron nitride
We show that in a low-pressure chemical vapor deposition (CVD) system, the residual oxygen and/or air play a crucial role in the mechanism of the growth of hexagonal boron nitride (h-BN) films on Ni foil 'enclosures'. Hexagonal-BN films grow on the Ni foil surface via the formation of an intermediate boric-oxide (BOx) phase followed by a thermal reduction of the BOx by a carbon source (either amorphous carbon powder or methane), leading to the formation of single-and bi-layer h-N. Low energy electron microscopy (LEEM) and diffraction (LEED) were used to map the number of layers over large areas; Raman spectroscopy, time-of-flight secondary ion mass spectrometry (ToF-SIMS), x-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used to characterize the structure and physical quality of the ultra-thin h-BN film. The growth procedure reported here leads to a better understanding and control of the synthesis of ultra-thin h-BN films
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