69 research outputs found

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    Department of Materials Science EngineeringDefects are a very important aspect of materials science as they can influence the intrinsic properties of materials. In particular, structural defects can greatly impact two-dimensional (2D) materials because these defects are all located on the surface. To understand the relationship between defects and properties of 2D materials, the basic crystal structure of the materials and the formation mechanism of their defects must be precisely understood. Graphene, which consists of single carbon atoms, has been comprehensively studied in regards to its structural defects, owing to its many interesting mechanical and chemical properties. Nevertheless, the behavior of graphene defects is not well understood at the atomic scale. Hexagonal boron nitride (hBN) has a hexagonal lattice similar to that of graphene, but consists of two elements (boron and nitrogen) instead of one. Molybdenum disulfide (MoS2) is a representative transition metal chalcogenide (TMD), which consists of two sulfur layers and a molybdenum layer. The defects of hBN and MoS2 have also been studied, but these studies are not well-developed compared to those of graphene, as hBN and MoS2 have more complex structures. As theoretical studies of defects in three-dimensional (3D) materials are already well-established, the study of defects in 2D materials must also be developed as the two are not entirely relatable. In this thesis, the atomic structures and dynamics of defects on 2D materials are systemically studied using aberration-corrected transmission electron microscopy. To investigate the underlying mechanism of these defects, an accelerating voltage of 80 kV was used, selected in consideration of the knock-on thresholds of graphene, hBN and MoS2 when forming and analyzing atomic defects under electron beam irradiation. The effects of oxygen and oxygen atoms on defects in monolayer graphene sheet were also studied using density functional theory calculations and free standing 2D silicon dioxide sheets. Finally, the dynamics of atomic defects such as dopants, vacancies, edge states, and stacking in 2D materials were investigated, showing excellent visualization of atomic defect structures.ope

    Atomic Resolution Imaging of Rotated Bilayer Graphene Sheets Using a Low kV Aberration-corrected Transmission Electron Microscope

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    Modern aberration-corrected transmission electron microscope (TEM) with appropriate electron beam energy is able to achieve atomic resolution imaging of single and bilayer graphene sheets. Especially, atomic configuration of bilayer graphene with a rotation angle can be identified from the direct imaging and phase reconstructed imaging since atomic resolution Moir pattern can be obtained successfully at atomic scale using an aberration-corrected TEM. This study boosts a reliable stacking order analysis, which is required for synthesized or artificially prepared multilayer graphene, and lets graphene researchers utilize the information of atomic configuration of stacked graphene layers readily.ope

    Atomic Arrangements of Graphene-like ZnO

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    ZnO, which can exist in various dimensions such as bulk, thin films, nanorods, and quantum dots, has interesting physical properties depending on its dimensional structures. When a typical bulk wurtzite ZnO structure is thinned to an atomic level, it is converted into a hexagonal ZnO layer such as layered graphene. In this study, we report the atomic arrangement and structural merging behavior of graphene-like ZnO nanosheets transferred onto a monolayer graphene using aberration-corrected TEM. In the region to which an electron beam is continuously irradiated, it is confirmed that there is a directional tendency, which is that small-patched ZnO flakes are not only merging but also forming atomic migration of Zn and O atoms. This study suggests atomic alignments and rearrangements of the graphene-like ZnO, which are not considered in the wurtzite ZnO structure. In addition, this study also presents a new perspective on the atomic behavior when a bulk crystal structure, which is not an original layered structure, is converted into an atomic-thick layered two-dimensional structure

    Morphologically Controlled Synthesis of Reduced-Dimensional ZnO/ Zn(OH)2 Nanosheets

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    Conventional two-dimensional materials either have natural layered structures or are produced, with large surface areas, via physical or chemical synthesis. However, to form a twodimensional material from a non-layered material, a method different from the existing ones is required. In this study, a surfactant-assisted method was utilized to synthesize Zn(OH)2 (a nonlayered transition metal oxide) nanosheets. This study described the synthesis of Zn(OH)2 nanosheets using an anionic sulfate layer and demonstrated a method of controlling the thickness and shape of the synthesized nanosheets by varying the surfactant concentration. Further, the characteristics of oxygen evolution reaction using ZnO/Zn(OH)2 nanosheets, obtained by annealing the synthesized sheets, as catalysts were studied

    A Case of Non-Hodgkin's Lymphoma in Patient with Coombs' Negative Hemolytic Anemia and Idiopathic Thrombocytopenic Purpura

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    Coombs' negative autoimmune hemolytic anemia (AIHA) is a rare disease which shares similar clinical and hematological features with Coombs' positive AIHA, but its exact frequency remains unknown. There have been few reports of idiopathic thrombocytopenic purpura (ITP) and Coombs' negative AIHA associated with other lymphoproliferative disorders (LPDs). Since there is a well known association between LPDs and autoimmune phenomena, it is important to investigate the possibility of an underlying malignancy. We report a case of ITP and Coombs' negative AIHA associated with diffuse large B-cell lymphoma

    Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer

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    The effective synthesis of two-dimensional transition metal dichalcogenides alloy is essential for successful application in electronic and optical devices based on a tunable band gap. Here we show a synthesis process for Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> alloy using sulfurization of super-cycle atomic layer deposition Mo<inf>1-x</inf>W<inf>x</inf>O<inf>y</inf>. Various spectroscopic and microscopic results indicate that the synthesized Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> alloys have complete mixing of Mo and Watoms and tunable band gap by systematically controlled composition and layer number. Based on this, we synthesize a vertically composition-controlled (VCC) Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> multilayer using five continuous super-cycles with different cycle ratios for each super-cycle. Angle-resolved X-ray photoemission spectroscopy, Raman and ultraviolet-visible spectrophotometer results reveal that a VCC Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> multilayer has different vertical composition and broadband light absorption with strong interlayer coupling within a VCC Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> multilayer. Further, we demonstrate that a VCC Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> multilayer photodetector generates three to four times greater photocurrent than MoS<inf>2</inf>-and WS<inf>2</inf>-based devices, owing to the broadband light absorption. © 2015 Macmillan Publishers Limitedopen1

    Atomic-scale dynamics of triangular hole growth in monolayer hexagonal boron nitride under electron irradiation

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    The production of holes by electron beam irradiation in hexagonal boron nitride (hBN), which has a lattice similar to that of graphene, is monitored over time using atomic resolution transmission electron microscopy. The holes appear to be initiated by the formation of a vacancy of boron and grow in a manner that retains an overall triangular shape. The hole growth process involves the formation of single chains of B and N atoms and is accompanied by the ejection of atoms and bundles of atoms along the hole edges, as well as atom migration. These observations are compared to density functional theory calculations and molecular dynamics simulations.open1

    The determinants of stroke phenotypes were different from the predictors (CHADS2 and CHA2DS2-VASc) of stroke in patients with atrial fibrillation: a comprehensive approach

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    <p>Abstract</p> <p>Background</p> <p>Atrial fibrillation (AF) is a leading cause of fatal ischemic stroke. It was recently reported that international normalized ratio (INR) levels were associated with infarct volumes. However, factors other than INR levels that affect stroke phenotypes are largely unknown. Therefore, we evaluated the determinants of stroke phenotypes (pattern and volume) among patients with AF who were not adequately anticoagulated.</p> <p>Methods</p> <p>We analyzed data pertaining to consecutive AF patients admitted over a 6-year period with acute MCA territory infarcts. We divided the patients according to DWI (diffusion-weighted imaging) lesion volumes and patterns, and the relationship between stroke predictors (the CHADS<sub>2 </sub>and CHA<sub>2</sub>DS<sub>2</sub>-VASc score), systemic, and local factors and each stroke phenotype were then evaluated.</p> <p>Results</p> <p>The stroke phenotypes varied among 231 patients (admission INR median 1.06, interquartile range (IQR) 1.00-1.14). Specifically, (1) the DWI lesion volumes ranged from 0.04-338.62 ml (median 11.86 ml; IQR, 3.07-44.20 ml) and (2) 46 patients had a territorial infarct pattern, 118 had a lobar/deep pattern and 67 had a small scattered pattern. Multivariate testing revealed that the CHADS<sub>2 </sub>and CHA<sub>2</sub>DS<sub>2</sub>-VASc score were not related to either stroke phenotype. Additionally, the prior use of antiplatelet agents was not related to the stroke phenotypes. Congestive heart failure and diastolic dysfunction were not associated with stroke phenotypes.</p> <p>Conclusions</p> <p>The results of this study indicated that the determinants of stroke phenotypes were different from the predictors (i.e., CHADS2 and CHA<sub>2</sub>DS<sub>2</sub>-VASc score) of stroke in patients with AF.</p
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