Boron δ-doped (111) diamond solution gate field effect transistors.

A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (111) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I-V) characteristics in comparison to previous similar devices fabricated on (100) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET. The oxidised device shows a site-binding model pH sensitivity of 36 mV/pH, displaying fast temporal responses. Considering the biocompatibility of diamond towards cells, the device's highly mutable transistor characteristics, pH sensitivity and stability against anodic oxidation common to hydrogen terminated diamond SGFET, oxidised boron δ-doped diamond SGFETs show promise for the recording of action potentials from electrogenic cells

Structural, optical and electrical properties of Cu2Zn1−xCdxSnS4 quinternary alloys nanostructures deposited on porous silicon

Tyto nanostruktury quinternarních slitin Cu2Zn1-xCdxSnS4 s různým obsahem Cd byly pěstovány pomocí odstřeďovací techniky potahováním porézního substrátu křemíku (63,93%). Strukturní vlastnosti Cu2Zn1-xCdxSnS4 / PS byly zkoumány pomocí rentgenové difrakce a pole pomocí emisního elektronového mikroskopu (FE-SEM).The Cu2Zn1−xCdxSnS4 quinternary alloy nanostructures with different Cd contents were grown using spin coating technique on porous silicon (63.93 %) substrate. The structural properties of Cu2Zn1−xCdxSnS4/PS were investigated by X-ray diffraction and field emission-scanning electron microscope (FE-SEM)