Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions

Selfconsistent hybridization expansions for static properties of the Anderson impurity model

By means of a projector-operator formalism we derive an approximation based on a self consistent hybridization expansion to study the ground state properties of the Anderson Impurity model. We applied the approximation to the general case of finite Coulomb repulsion $U$, extending previous work with the same formalism in the infinite-$U$ case. The treatment provides a very accurate calculation of the ground state energy and their related zero temperature properties in the case in which $U$ is large enough, but still finite, as compared with the rest of energy scales involved in the model. The results for the valence of the impurity are compared with exact results that we obtain from equations derived using the Bethe ansatz and with a perturbative approach. The magnetization and magnetic susceptibility is also compared with Bethe ansatz results. In order to do this comparison, we also show how to regularize the Bethe ansatz integral equations necessary to calculate the impurity valence, for arbitrary values of the parameters.Comment: 8 pages, 5 figure

A non-perturbative analysis of symmetry breaking in two-dimensional phi^4 theory using periodic field methods

We describe the generalization of spherical field theory to other modal expansion methods. The main approach remains the same, to reduce a d-dimensional field theory into a set of coupled one-dimensional systems. The method we discuss here uses an expansion with respect to periodic-box modes. We apply the method to phi^4 theory in two dimensions and compute the critical coupling and critical exponents. We compare with lattice results and predictions via universality and the two-dimensional Ising model.Comment: 12 pages, 4 figures, version to appear in Physics Letters

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analysed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain, but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.Comment: 15 pages, 3 figures, 1 table to be published in Applied Physics Letter

Applying the Hilbert--Huang Decomposition to Horizontal Light Propagation C_n^2 data

The Hilbert Huang Transform is a new technique for the analysis of non--stationary signals. It comprises two distinct parts: Empirical Mode Decomposition (EMD) and the Hilbert Transform of each of the modes found from the first step to produce a Hilbert Spectrum. The EMD is an adaptive decomposition of the data, which results in the extraction of Intrinsic Mode Functions (IMFs). We discuss the application of the EMD to the calibration of two optical scintillometers that have been used to measure C_n^2 over horizontal paths on a building rooftop, and discuss the advantage of using the Marginal Hilbert Spectrum over the traditional Fourier Power Spectrum.Comment: 9 pages, 11 figures, proc. SPIE 626

Initial state preparation with dynamically generated system-environment correlations

The dependence of the dynamics of open quantum systems upon initial correlations between the system and environment is an utterly important yet poorly understood subject. For technical convenience most prior studies assume factorizable initial states where the system and its environments are uncorrelated, but these conditions are not very realistic and give rise to peculiar behaviors. One distinct feature is the rapid build up or a sudden jolt of physical quantities immediately after the system is brought in contact with its environments. The ultimate cause of this is an initial imbalance between system-environment correlations and coupling. In this note we demonstrate explicitly how to avoid these unphysical behaviors by proper adjustments of correlations and/or the coupling, for setups of both theoretical and experimental interest. We provide simple analytical results in terms of quantities that appear in linear (as opposed to affine) master equations derived for factorized initial states.Comment: 6 pages, 2 figure

A Brillouin torus decomposition for Chern insulators

Two-band Chern insulators are topologically classified by the Chern number, $c$, which is given by the integral of the Berry curvature of the occupied band over the Brillouin torus. The curvature itself comes from the imaginary part of a more basic object, the quantum geometric tensor, $Q$. On the other hand, the integral over the Brillouin torus of the real part of $Q$ gives rise to another magnitude, the quantum volume, $v_{g}$, that like $c$ also changes abruptly when the system undergoes a topological phase transition. Recently, the information about the topology of the system contained in the quantum volume has been investigated. In this paper we present new results regarding the underlying geometric structure of two-band Chern insulators. Since a generic model describing the system can be characterized by a map, the classifying map, from the Brillouin torus to the two-sphere, we study its properties at the geometric level. We present a procedure for splitting the Brillouin torus into different sectors in such a way that the classifying map when restricted to each of them is an injective immersion. By doing so, we show that $c$ and $v_{g}$ have a very rich inner structure, meaning that they are composed by different contributions that behave differently at the topological phase transition. In particular, some specific regions are found to be ones responsible for the non vanishing value of the topological invariant $c$. In addition, the present work makes contact with, and clarifies, some interpretations of the quantum volume in terms of the Euler characteristic number that were done in the recent literature. We illustrate our findings by a careful analysis of some selected models for Chern insulators corresponding to tight-binding Hamiltonians