Nature of photoexcited states in ZnO-embedded graphene quantum dots

The combination of wide-band gap semiconductors like zinc oxide (ZnO) and graphene quantum dots (GQDs) is a promising strategy to tune optoelectronic properties of GQDs and to develop new functionalities. Here we report on a theoretical design of not-yet-synthesized hybrid materials composed of ZnO clusters surrounded by carbon moieties, hereinafter referred to as ZnO-embedded graphene quantum dots. Their structure and light absorption properties are presented, with an in-depth analysis of the nature of the photoexcited states. The stability of the (ZnO)nC96-2n system with n=1, 3, 4, 7, 12 and 27 is investigated by estimating cohesive energy and performing vibrational mode analysis. A strong dependence of the structural and optoelectronic properties of the hybrid material on the amount of ZnO pairs is revealed and discussed. A strong light absorption and unexpected enhancement of Raman modes related to the vibrations in carbon moiety are observed for highly symmetric (ZnO)27C42 system that makes it an ideal study subject. Complementary excited state analysis, charge density difference (CDD) analysis and interfragment charge transfer analysis enabled reaching deep insights into the nature of the excited states. A dominating contribution of doubly degenerate locally excited states in broadband light absorption by (ZnO)27C42 is identified. The present results are helpful to elucidate the nature of the fundamental internal mechanisms underlying the light absorption in ZnO-embedded graphene quantum dots, thereby providing a scientific background for future experimental study of low-dimensional metal-oxygen-carbon materials family

Private Colleges, State Aid, and the Establishment Clause

Using local scanning electrical techniques we study edge effects in side-gated Hall bar nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of similar to 60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.Funding Agencies|NMS under the IRD Graphene Project (NPL); EMRP</p

Оценка квалификации выпускника фармацевтического факультета с позиций компетентностного подхода

конкурентоспособностьОБРАЗОВАНИЕ ФАРМАЦЕВТИЧЕСКОЕпровизорыПРОФЕССИОНАЛЬНАЯ КОМПЕТЕНТНОСТ

Antibiotic Adverse Reactions and Drug Interactions

Magnetic force microscopy (MFM) offers a unique insight into the nanoscopic scale domain structures of magnetic materials. However, MFM is generally regarded as a qualitative technique and, therefore, requires meticulous calibration of the magnetic scanning probe stray field (Bprobe) for quantitative measurements. We present a straightforward calibration of Bprobe using scanning gate microscopy on epitaxial graphene Hall sensor in conjunction with Kelvin probe force microscopy feedback loop to eliminate sample-probe parasitic electric field interactions. Using this technique, we determined Bprobe ~ 70 mT and ~ 76 mT for probes with nominal magnetic moment ~ 1 × 10-13 and &gt; 3 × 10-13 emu, respectively, at a probe-sample distance of 20 nm.Funding Agencies|Concept Graphene project||IRD Graphene project||MetMags project|||CSD2010-00024|</p

Вплив засобів масової інформації та комп’ютерних технологій на формування культури сімейних стосунків

(uk) У статті автор розкриває вплив засобів масової інформації та комп’ютерних технологій на формування культури сімейних стосунків.(ru) В статье автором рассматривается влияние средств массовой информации и компьютерных технологий на формирование культуры семейных отношений

Magnetotransport in graphene on silicon side of SiC

We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before.Comment: 5 pages, 6 figures, accepted for publication in the "IOP Journal of Physics: Conference series" as a contribution to the proceedings of the 20th International Conference on "High Magnetic Fields in Semiconductor Physics", HMF 2

Anodization study of epitaxial graphene:insights on the oxygen evolution reaction of graphitic materials

The photoemission electron microscopy and x-ray photoemission spectroscopy were utilized for the study of anodized epitaxial graphene (EG) on silicon carbide as a fundamental aspect of the oxygen evolution reaction on graphitic materials. The high-resolution analysis of surface morphology and composition quantified the material transformation during the anodization. We investigated the surface with lateral resolution amp;lt;150 nm, revealing significant transformations on the EG and the role of multilayer edges in increasing the film capacitance.Funding Agencies| [EP/K035746/1]; [EP/M000605/1]</p

Типы отношения к болезни у пациентов с желчнокаменной болезнью

ЖЕЛЧНОКАМЕННАЯ БОЛЕЗНЬЖЕЛЧНЫХ ПУТЕЙ БОЛЕЗНИтестированиеБОЛЕЗНЬВЫЗДОРОВЛЕНИЕпсихоэмоциональные факторыпсиходиагностик