Partitioning of computationally intensive tasks between FPGA and CPUs

With the recent development of faster and more complex Multiprocessor System-on-Cips (MPSoCs), a large number of different resources have become available on a single chip. For example, Xilinx's UltraScale+ is a powerful MPSoC with four ARM Cortex-A53 CPUs, two Cortex-R5 real-time cores, an FPGA fabric and a Mali-400 GPU. Optimal partitioning between CPUs, real-time cores, GPU and FPGA is therefore a challenge. For many scientific applications with high sampling rates and real-time signal analysis, an FFT needs to be calculated and analyzed directly in the measuring device. The goal of partitioning such an FFT in an MPSoC is to make best use of the available resources, to minimize latency and to optimize performance. The paper compares different partitioning designs and discusses their advantages and disadvantages. Measurement results with up to 250 MSamples per second are shown

4K HEVC video processing with GPU optimization on Jetson TX1

Learn how to capture and process 4K video (HEVC encoding, scaling, mixing) on the TX1 and how to integrate the powerful GPU for complex tasks. 4K video previously required custom hardware or high-performance desktop processors. The heterogeneous system architecture of the TX1 allows to process these tasks in a single chip. The main challenges lie in the optimal utilization of the different hardware resources of the TX1 (CPU, GPU, dedicated hardware blocks) and in the software frameworks. Variants are discussed and bottlenecks identified. The interaction between hardware and software is shown. Simple capturing and displaying 4K video can be achieved using existing out-of-the-box methods. However, GPU based enhancements were developed and integrated for realtime scaling and video mixing

Olutasidenib (FT-2102) in patients with relapsed or refractory IDH1-mutant glioma: A multicenter, open-label, phase Ib/II trial

Brain penetration; Mutant; OlutasidenibPenetració cerebral; Mutant; OlutasidenibPenetración cerebral; Mutante; OlutasidenibBackground Olutasidenib (FT-2102) is a highly potent, orally bioavailable, brain-penetrant and selective inhibitor of mutant isocitrate dehydrogenase 1 (IDH1). The aim of the study was to determine the safety and clinical activity of olutasidenib in patients with relapsed/refractory gliomas harboring an IDH1R132X mutation. Methods This was an open-label, multicenter, nonrandomized, phase Ib/II clinical trial. Eligible patients (≥18 years) had histologically confirmed IDH1R132X-mutated glioma that relapsed or progressed on or following standard therapy and had measurable disease. Patients received olutasidenib, 150 mg orally twice daily (BID) in continuous 28-day cycles. The primary endpoints were dose-limiting toxicities (DLTs) (cycle 1) and safety in phase I and objective response rate using the Modified Response Assessment in Neuro-Oncology criteria in phase II. Results Twenty-six patients were enrolled and followed for a median 15.1 months (7.3‒19.4). No DLTs were observed in the single-agent glioma cohort and the pharmacokinetic relationship supported olutasidenib 150 mg BID as the recommended phase II dose. In the response-evaluable population, disease control rate (objective response plus stable disease) was 48%. Two (8%) patients demonstrated a best response of partial response and eight (32%) had stable disease for at least 4 months. Grade 3‒4 adverse events (≥10%) included alanine aminotransferase increased and aspartate aminotransferase increased (three [12%], each). Conclusions Olutasidenib 150 mg BID was well tolerated in patients with relapsed/refractory gliomas harboring an IDH1R132X mutation and demonstrated preliminary evidence of clinical activity in this heavily pretreated population.This study was funded by Forma Therapeutics, Inc., Watertown, MA, USA

Heterostructures of skutterudites and germanium antimony tellurides – structure analysis and thermoelectric properties of bulk samples

Heterostructures of germanium antimony tellurides with skutterudite-type precipitates are promising thermoelectric materials due to low thermal conductivity and multiple ways of tuning their electronic transport properties. Materials with the nominal composition [CoSb2(GeTe)_(0.5)]_x(GeTe)_(10.5)Sb_2Te_3 (x = 0–2) contain nano- to microscale precipitates of skutterudite-type phases which are homogeneously distributed. Powder X-ray diffraction reveals that phase transitions of the germanium antimony telluride matrix depend on its GeTe content. These are typical for this class of materials; however, the phase transition temperatures are influenced by heterostructuring in a beneficial way, yielding a larger existence range of the intrinsically nanostructured pseudocubic structure of the matrix. Using microfocused synchrotron radiation in combination with crystallite pre-selection by means of electron microscopy, single crystals of the matrix as well as of the precipitates were examined. They show nano-domain twinning of the telluride matrix and a pronounced structure distortion in the precipitates caused by GeTe substitution. Thermoelectric figures of merit of 1.4 ± 0.3 at 450 °C are observed. In certain temperature ranges, heterostructuring involves an improvement of up to 30% compared to the homogeneous material

Layered germanium tin antimony tellurides: element distribution, nanostructures and thermoelectric properties

In the system Ge-Sn-Sb-Te, there is a complete solid solution series between GeSb2Te4 and SnSb2Te4. As Sn2Sb2Te5 does not exist, Sn can only partially replace Ge in Ge2Sb2Te5; samples with 75% or more Sn are not homogeneous. The joint refinement of high-resolution synchrotron data measured at the K-absorption edges of Sn, Sb and Te combined with data measured at off-edge wavelengths unambiguously yields the element distribution in 21R-Ge0.6Sn0.4Sb2Te4 and 9P-Ge1.3Sn0.7Sb2Te5. In both cases, Sb predominantly concentrates on the position near the van der Waals gaps between distorted rocksalt-type slabs whereas Ge prefers the position in the middle of the slabs. No significant antisite disorder is present. Comparable trends can be found in related compounds; they are due to the single-side coordination of the Te atoms at the van der Waals gap, which can be compensated more effectively by Sb3+ due to its higher charge in comparison to Ge2+. The structure model of 21R-Ge0.6Sn0.4Sb2Te4 was confirmed by high-resolution electron microscopy and electron diffraction. In contrast, electron diffraction patterns of 9P-Ge1.3Sn0.7Sb2Te5 reveal a significant extent of stacking disorder as evidenced by diffuse streaks along the stacking direction. The Seebeck coefficient is unaffected by the Sn substitution but the thermal conductivity drops by a factor of 2 which results in a thermoelectric figure of merit ZT = similar to 0.25 at 450 degrees C for both Ge0.6Sn0.4Sb2Te4 and Ge1.3Sn0.7Sb2Te5, which is higher than similar to 0.20 for unsubstituted stable layered Ge-Sb-Te compounds

TAGS-related indium compounds and their thermoelectric properties – the solid solution series (GeTe)_xAgIn_ySb_(1-y)Te_2 (x = 1–12; y = 0.5 and 1)

Various members of the solid solution series (GeTe)_xAgIn_ySb_(1−y)Te_2 can be obtained by quenching high-temperature phases (x = 12 for y = 1 and x > 5 for y = 0.5). In contrast, high-temperature and high-pressure conditions (2.5 GPa, 350 °C) are required for the synthesis of members with In contents >3.6 atom% (such as x 5 adopt the α-GeTe structure type (3 + 3 coordination). Thus, in all samples investigated, 3 or 4 cations are disordered at one Wyckoff position. The quenched high-temperature or high-pressure phases, respectively, are almost homogeneous. Their powder X-ray diffraction patterns suggest pure phases; yet, high-resolution electron microscopy occasionally reveals a very small extent of nanoscopic precipitates as well as dislocations and twinning. (GeTe)_(5.5)AgIn_(0.5)Sb_(0.5)Te_2 shows a maximal ZT value of 0.75 even when (partial) decomposition into the TAGS material (GeTe)_(11)AgSbTe_2 and chalcopyrite-type AgInTe_2 has occurred at 300 °C. (GeTe)_(5.5)AgInTe_2 prepared under high-pressure conditions exhibits a ZT value of 0.6 at 125 °C, i.e. far below the decomposition temperature and thus is an interesting new low-temperature thermoelectric material

Nanostructures in Te/Sb/Ge/Ag (TAGS) Thermoelectric Materials Induced by Phase Transitions Associated with Vacancy Ordering

Te/Sb/Ge/Ag (TAGS) materials with rather high concentrations of cation vacancies exhibit improved thermoelectric properties as compared to corresponding conventional TAGS (with constant Ag/Sb ratio of 1) due to a significant reduction of the lattice thermal conductivity. There are different vacancy ordering possibilities depending on the vacancy concentration and the history of heat treatment of the samples. In contrast to the average α-GeTe-type structure of TAGS materials with cation vacancy concentrations <3%, quenched compounds like Ge_(0.53)Ag_(0.13)Sb_(0.27)□_(0.07)Te_1 and Ge_(0.61)Ag_(0.11)Sb_(0.22)□_(0.06)Te_1 exhibit “parquet-like” multidomain nanostructures with finite intersecting vacancy layers. These are perpendicular to the pseudocubic 111 directions but not equidistantly spaced, comparable to the nanostructures of compounds (GeTe)_nSb_2Te_3. Upon heating, the nanostructures transform into long-periodically ordered trigonal phases with parallel van der Waals gaps. These phases are slightly affected by stacking disorder but distinctly different from the α-GeTe-type structure reported for conventional TAGS materials. Deviations from this structure type are evident only from HRTEM images along certain directions or very weak intensities in diffraction patterns. At temperatures above 400 °C, a rock-salt-type high-temperature phase with statistically disordered cation vacancies is formed. Upon cooling, the long-periodically trigonal phases are reformed at the same temperature. Quenched nanostructured Ge_(0.53)Ag_(0.13)Sb_(0.27)□_(0.07)Te_1 and Ge_(0.61)Ag_(0.11)Sb_(0.22)□_(0.06)Te_1 exhibit ZT values as high as 1.3 and 0.8, respectively, at 160 °C, which is far below the phase transition temperatures. After heat treatment, i.e., without pronounced nanostructure and when only reversible phase transitions occur, the ZT values of Ge_(0.53)Ag_(0.13)Sb_(0.27)□_(0.07)Te_1 and Ge_(0.61)Ag_(0.11)Sb_(0.22)□_(0.06)Te_1 with extended van der Waals gaps amount to 1.6 at 360 °C and 1.4 at 410 °C, respectively, which is at the top end of the range of high-performance TAGS materials