1,417 research outputs found
The Ingalls-Thomas Bijections
Given a finite acyclic quiver Q with path algebra kQ, Ingalls and Thomas have
exhibited a bijection between the set of Morita equivalence classes of
support-tilting modules and the set of thick subcategories of mod kQ and they
have collected a large number of further bijections with these sets. We add
some additional bijections and show that all these bijections hold for
arbitrary hereditary artin algebras. The proofs presented here seem to be of
interest also in the special case of the path algebra of a quiver.Comment: This is a modified version of an appendix which was written for the
paper "The numbers of support-tilting modules for a Dynkin algebra" (see
arXiv:1403.5827v1
Effects of plasma hydrogenation on trapping properties of dislocations in heteroepitaxial InP/GaAs
In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells
Making history: intentional capture of future memories
Lifelogging' technology makes it possible to amass digital data about every aspect of our everyday lives. Instead of focusing on such technical possibilities, here we investigate the way people compose long-term mnemonic representations of their lives. We asked 10 families to create a time capsule, a collection of objects used to trigger remembering in the distant future. Our results show that contrary to the lifelogging view, people are less interested in exhaustively digitally recording their past than in reconstructing it from carefully selected cues that are often physical objects. Time capsules were highly expressive and personal, many objects were made explicitly for inclusion, however with little object annotation. We use these findings to propose principles for designing technology that supports the active reconstruction of our future past
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Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006
Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration
Applications of BGP-reflection functors: isomorphisms of cluster algebras
Given a symmetrizable generalized Cartan matrix , for any index , one
can define an automorphism associated with of the field of rational functions of independent indeterminates It is an isomorphism between two cluster algebras associated to the
matrix (see section 4 for precise meaning). When is of finite type,
these isomorphisms behave nicely, they are compatible with the BGP-reflection
functors of cluster categories defined in [Z1, Z2] if we identify the
indecomposable objects in the categories with cluster variables of the
corresponding cluster algebras, and they are also compatible with the
"truncated simple reflections" defined in [FZ2, FZ3]. Using the construction of
preprojective or preinjective modules of hereditary algebras by Dlab-Ringel
[DR] and the Coxeter automorphisms (i.e., a product of these isomorphisms), we
construct infinitely many cluster variables for cluster algebras of infinite
type and all cluster variables for finite types.Comment: revised versio
Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy
Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples
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