Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents

High quality 1 μm thick a-plane MgxZn1−xO layers were produced by molecular beam epitaxy with Mg contents higher than 50%. Resonant Rutherford backscattering spectrometry combined with ion channeling revealed a uniform growth in both composition and atomic order. The lattice-site location of Mg, Zn and O elements was determined independently, proving the substitutional behaviour of Mg in Zn-sites of the wurtzite lattice. X-Ray diffraction pole figure analysis also confirms the absence of phase separation. Optical properties at such high Mg contents were studied in Schottky photodiodes

Tunable plasmonic resonance of gallium nanoparticles by thermal oxidation at low temperatures

This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered toThe effect of the oxidation of gallium nanoparticles (Ga NPs) on their plasmonic properties is investigated. Discrete dipole approximation has been used to study the wavelength of the out-of-plane localized surface plasmon resonance in hemispherical Ga NPs, deposited on silicon substrates, with oxide shell (Ga2O3) of different thickness. Thermal oxidation treatments, varying temperature and time, were carried out in order to increase experimentally the Ga2O3 shell thickness in the NPs. The optical, structural and chemical properties of the oxidized NPs have been studied by spectroscopic ellipsometry, scanning electron microscopy, grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy. A clear redshift of the peak wavelength is observed, barely affecting the intensity of the plasmon resonance. A controllable increase of the Ga2O3 thickness as a consequence of the thermal annealing is achieved. In addition, simulations together with ellipsometry results have been used to determine the oxidation rate, whose kinetics is governed by a logarithmic dependence. These results support the tunable properties of the plasmon resonance wavelength in Ga NPs by thermal oxidation at low temperatures without significant reduction of the plasmon resonance intensityThis research is supported by the MINECO (CTQ2014-53334-C2-2-R and MAT2016-80394-R) and Comunidad de Madrid (NANOAVANSENS ref. S2013/MIT-3029) projects. ARC acknowledges Ramón y Cajal program (under contract number RYC-2015-18047). FN acknowledges support from Marie Sklodowska-Curie grant agreement No 641899 from the European Union’s Horizon 2020 research and innovation programm

Analytical simulation of RBS spectra of nanowire samples

Almost all, if not all, general purpose codes for analysis of Ion Beam Analysis data have been originally developed to handle laterally homogeneous samples only. This is the case of RUMP, NDF, SIMNRA, and even of the Monte Carlo code Corteo. General-purpose codes usually include only limited support for lateral inhomogeneity. In this work, we show analytical simulations of samples that consist of a layer of parallel oriented nanowires on a substrate, using a model implemented in NDF. We apply the code to real samples, made of vertical ZnO nanowires on a sapphire substrate. Two configurations of the nanowires were studied: 40 nm diameter, 4.1 μm height, 3.5% surface coverage; and 55 nm diameter, 1.1 μm height, 42% surface coverage. We discuss the accuracy and limits of applicability of the analysisAuthors thank funding from projects CTQ2014-53334-C2-2-R (MINECO, Spain) and NANOAVANSENS S2013/MIT 3029 (Comunidad de Madrid). A.R.C. acknowledges Juan de la Cierva program (under contract number JCI-2012-14509). This work was partially funded by Fundação para a Ciência e Tecnologia under grant UID/Multi/04349/201

Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures

The influence of the beam energy on the determination of strain state with ion channeling in GaN-based heterostructures (HSs) is addressed. Experimental results show that anomalous channeling may hinder an accurate analysis due to the steering effects at the HS interface, which are more intense at lower ion energies. The experimental angular scans have been well reproduced by Monte Carlo simulations, correlating the steering effects with the close encounter probability at the interface. Consequently, limitations in the determination of the strain state by ion channeling can be overcome by selecting the adequate beam energy

Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction

The Al content in AlxGa1 − xN/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1bxb0.3 grown by metal organic chemical vapour deposition on sapphire substrates have been studied. XRD and IBA corroborate the good epitaxial growth of the AlGaN layer, which slightly deteriorates with the incorporation of Al for xN0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis

Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery

Diamond properties can be tuned by doping and ion-beam irradiation is one of the most powerful techniques to do it in a controlled way, but it also produces damage and other aftereffects. Of particular interest is boron doping which, in moderate concentrations, causes diamond to become a p-type semiconductor and, at higher boron concentrations, a superconductor. Nevertheless, the preparation of superconducting boron-doped diamond by ion implantation is hampered by amorphization and subsequent graphitization after annealing. The aim of this work was to explore the possibility of creating boron-doped diamond superconducting regions and to provide a new perspective on the damage induced in diamond by MeV ion irradiation. Thus, a comprehensive analysis of the damage and eventual recovery of diamond when irradiated with 9 MeV B ions with different fluences has been carried out, combining Raman, photoluminescence, electrical resistivity, X-ray diffraction and Rutherford Backscattering/Ion-channeling. It is found that, as the B fluence increases, carbon migrates to interstitial sites outside of the implantation path and an amorphous fraction increases within the path. For low fluences (∼1015 ions/cm2), annealing at 1000 °C is capable to fully recovering the diamond structure without graphitization. However, for higher fluences (≥5 × 1016 ions/cm2), those required for superconductivity, the recovery is important, but some disorder still remains. For high fluences, annealing at 1200 °C is detrimental for the diamond lattice and graphite traces appear. The incomplete healing of the diamond lattice and the interstitial location of B can explain that optimally doped samples do not exhibit superconductivityThis work has been partially supported by the Ministerio de Ciencia e Innovacion ´ of Spain (Project grants PID2020-112770RB-C22/MCIN/ AEI/10.13039/501100011033, PID2021-127033OB-C21/MCIN/AEI/ 10.13039/501100011033, and PID2021-127498NB-I00/AEI/FEDER/ 10.13039/501100011033). We also acknowledge financial support from MCIN/AEI/10.13039/501100011033, through the “María de Maeztu” Programme for Units of Excellence in R&D (CEX2018-000805- M), as well as from the Autonomous Community of Madrid through program S2018/NMT-4321 (NANOMAGCOST-CM

Incorporation of europium into gan nanowires by ion implantation

Rare earth (RE)-doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility, and small dimension of the NW host, are promising building blocks for future nanoscale devices in optoelectronics and quantum technologies. Europium doping of GaN NWs was performed by ion implantation, and structural and optical properties were assessed in comparison to thin film reference samples. Despite some surface degradation for high implantation fluences, the NW core remains of high crystalline quality with lower concentrations of extended defects than observed in ion-implanted thin films. Strain introduced by implantation defects is efficiently relaxed in NWs and the measured deformation stays much below that in thin films implanted in the same conditions. Optical activation is achieved for all samples after annealing, and while optical centers are similar in all samples, Eu^3+ emission from NW samples is shown to be less affected by residual implantation damage than for the case of thin films. The incorporation of Eu in GaN NWs was further investigated by nano-cathodoluminescence and X-ray absorption spectroscopy (XAS). Maps of the Eu-emission intensity within a single NW agree well with the Eu-distribution predicted by Monte Carlo simulations, suggesting that no pronounced Eu-diffusion takes place. XAS shows that 70-80% of Eu is found in the 3+ charge state while 20-30% is 2+ attributed to residual implantation defects. A similar local environment was found for Eu in NWs and thin films: for low fluences, Eu is mainly incorporated on substitutional Ga-sites, while for high fluences XAS points at the formation of a local EuN-like next neighbor structure. The results reveal the high potential of ion implantation as a processing tool at the nanoscale