Improved drive current in RF vertical MOSFETS using hydrogen anneal

This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors without the hydrogen anneal. The value of drive current achieved is 250 ?A/?m, which is a record for thick pillar vertical MOSFETs. This improved performance is obtained even though a sacrificial oxidation was performed prior to the hydrogen anneal to smooth the pillar sidewall. The values of subthreshold slope and DIBL are 79 mV/decade and 45 mV/V, respectively, which are significantly better than most values reported in the literature for comparable devices. The H2 anneal is also shown to decrease the OFF-state leakage current by a factor of three

Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications

We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-?m lithography are compared with nonsilicided devices. A source–drain (S/D) activation anneal of 30 s at 1100 ?C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an fT of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-?m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar

A Physically Based Compact Model of Partially Depleted MOSFETs for Analog Circuit Stimulation

In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs is presented. The model uses a single expression to model the channel current, thereby ensuring continuous transition between all operating regions. Furthermore, care has been taken to ensure that this expression is also infinitely differentiable, resulting in smooth and continuous conductances and capacitances as well as higher order derivatives. Floating-body effects, which are particular to PD SOI and which are of concern to analog circuit designers in this technology, are well modeled. Small geometry effects such as channel length modulation (CLM), drain-induced barrier lowering (DIBL), charge sharing, and high field mobility effects have also been included. Self-heating (SH) effects are much more apparent in SOI devices than in equivalent bulk devices. These have been modeled in a consistent manner, and the implementation in SPICE3f5 gives the user an additional thermal node which allows internal device temperature rises to be monitored and also accommodates the modeling of coupled heating between separate devices. The model has been successfully used to simulate a variety of circuits which commonly cause problems with convergence. Due to its inherent robustness, the model can normally achieve convergence without recourse to the setting of initial nodal voltage estimates

Modeling resilience and sustainability in ancient agricultural systems

The reasons why people adopt unsustainable agricultural practices, and the ultimate environmental implications of those practices, remain incompletely understood in the present world. Archaeology, however, offers unique datasets on coincident cultural and ecological change, and their social and environmental effects. This article applies concepts derived from ecological resilience thinking to assess the sustainability of agricultural practices as a result of long-term interactions between political, economic, and environmental systems. Using the urban center of Gordion, in central Turkey, as a case study, it is possible to identify mismatched social and ecological processes on temporal, spatial, and organizational scales, which help to resolve thresholds of resilience. Results of this analysis implicate temporal and spatial mismatches as a cause for local environmental degradation, and increasing extralocal economic pressures as an ultimate cause for the adoption of unsustainable land-use practices. This analysis suggests that a research approach that integrates environmental archaeology with a resilience perspective has considerable potential for explicating regional patterns of agricultural change and environmental degradation in the past

A Pathfinder Instrument for Precision Radial Velocities in the Near-Infrared

We have designed and tested an in-plane echelle spectrograph configured to investigate precision radial velocities from ground-based near-infrared observations. The spectrograph operates across the spectral range of 0.9-1.7 mm at a spectral resolution of R = 50,000, and uses a liquid nitrogen-cooled HAWAII 1K detector. Repeated measurements of the Earth's rotation via integrated Sunlight with two different instrument arrangements in the near infrared Y band have produced radial velocities with ~10 m/s RMS over a period of several hours. The most recent instrument configuration has achieved an unbinned RMS of 7 m/s and suggests that infrared radial velocity precisions may be able to approach those achieved at optical wavelengths.Comment: 18 pages, 8 figures, accepted for publication in PAS

A study of the perceived risks, benefits and barriers to the use of SDD in adult critical care units (the SuDDICU study)

Peer reviewedPublisher PD