Comparisioms on growth, physiology and generation of Avicennia marina + Kandelia candel mangroves restored at different tidal elevations

以厦门市曾营海岸的三个人工填土相差0.5m，有相同底质背景的三个滩涂样地（厦零高程3.35、3.74、4.15m）人工种植的白骨壤+秋茄红树林为研究对象，造林4年后，探讨白骨壤和秋茄生长、生理及后代更新的差异。 三个样地红树幼林均密闭成林。从生长上看，白骨壤幼树树高、基径、分枝数、冠幅均为中样地最高，高样地白骨壤树高显著低于低样地，高样地和低样地上的其它指标无显著差异；中样地秋茄幼树树高、基径、分枝数、冠幅最高，高样地上树高和分枝数显著高于低样地，高样地和低样地秋茄幼树基径和冠幅则差异不显著性。中样地白骨壤和秋茄全树年平均生长量及整个样地群落年均增长量最高。从生长的优势上可以推测，中样地（厦...After 4 years’ reforestation, differences in growth and physiological responses of Avicennia marina and Kandelia candel and the next generation updating were studied at three tidal elevations （3.35，3.74，4.15 m of Xiamen sea-level respectively）with 0.5 m intervals，the same sediment background at coastal flat of Zengying, Xiamen. These two mangroves at three tidal elevations were closed 4 years...学位：理学硕士院系专业：海洋与环境学院环境科学与工程系_环境科学学号：2262006115233

On Curie temperature of B20-MnSi films

B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By controlling the Mn thickness and annealing parameters, the pure MnSi phase of polycrystalline and textured nature as well as the mixed phase of MnSi and MnSi1.7 are obtained. Surprisingly, all these MnSi films show an increased Curie temperature of up to around 43 K. The Curie temperature is likely independent of the structural parameters within our accessibility including the film thickness above a threshold, strain, cell volume and the mixture with MnSi1.7. However, a pronounced phonon softening is observed for all samples, which can tentatively be attributed to slight Mn excess from stoichiometry, leading to the increased Curie temperature

On Curie temperature of B20-MnSi films

B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By controlling the Mn thickness and annealing parameters, the pure MnSi phase of polycrystalline and textured nature as well as the mixed phase of MnSi and MnSi1.7 are obtained. Surprisingly, all these MnSi films show an increased Curie temperature of up to around 43 K. The Curie temperature is likely independent of the structural parameters within our accessibility including the film thickness above a threshold, strain, cell volume and the mixture with MnSi1.7. However, a pronounced phonon softening is observed for all samples, which can tentatively be attributed to slight Mn excess from stoichiometry, leading to the increased Curie temperature.Comment: 20 pages, 6 figure

TiO2 phase engineering by millisecond range annealing for highly efficient photocatalysis

Air pollution and the energy crisis are the two main driving forces behind the development of alternative, environmentally friendly methods of energy production. Photoactive materials can be used both to clean the air and to produce green hydrogen for clean energy. Transition metal oxides are one of the most considered materials for high-performance photocatalysis. In this work, we investigate the effect of millisecond flash lamp annealing (FLA) of TiO2 on the degradation of methyl blue (MB) and methyl orange (MO). To reduce the energy consumption of the TiO2 deposition process, the layers were made using magnetron sputtering at room temperature followed by millisecond FLA. By controlling the flash energy input, we can tune the phase formation of TiO2 films from pure anatase to mixed anatase/rutile phases. Scanning electron microscopy, positron annihilation spectroscopy, photoluminescence, and X-ray diffraction studies show that the crystal size and film quality increase with increasing annealing temperature. Photocatalytic experiments demonstrate that FLA-treated TiO2 films are active in degrading both MB and MO. This makes them attractive not only for the production of green hydrogen but also for the purification of water from medical contaminantsTED2021-129876B-I0

On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands

Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.Comment: 18 pages, 5 Figures, Supplementary informatio

Towards Bacteria Counting in DI Water of Several Microliters or Growing Suspension Using Impedance Biochips

We counted bacterial cells of E. coli strain K12 in several-microliter DI water or in several-microliter PBS in the low optical density (OD) range (OD = 0.05–1.08) in contact with the surface of Si-based impedance biochips with ring electrodes by impedance measurements. The multiparameter fit of the impedance data allowed calibration of the impedance data with the concentration cb of the E. coli cells in the range of cb = 0.06 to 1.26 × 109 cells/mL. The results showed that for E. coli in DI water and in PBS, the modelled impedance parameters depend linearly on the concentration of cells in the range of cb = 0.06 to 1.26 × 109 cells/mL, whereas the OD, which was independently measured with a spectrophotometer, was only linearly dependent on the concentration of the E. coli cells in the range of cb = 0.06 to 0.50 × 109 cells/mL

Detecting Bacterial Cell Viability in Few µL Solutions from Impedance Measurements on Silicon-Based Biochips

Using two different types of impedance biochips (PS5 and BS5) with ring top electrodes, a distinct change of measured impedance has been detected after adding 1–5 µL (with dead or live Gram-positive Lysinibacillus sphaericus JG-A12 cells to 20 µL DI water inside the ring top electrode. We relate observed change of measured impedance to change of membrane potential of L. sphaericus JG-A12 cells. In contrast to impedance measurements, optical density (OD) measurements cannot be used to distinguish between dead and live cells. Dead L. sphaericus JG-A12 cells have been obtained by adding 0.02 mg/mL of the antibiotics tetracycline and 0.1 mg/mL chloramphenicol to a batch with OD0.5 and by incubation for 24 h, 30 ◦C, 120 rpm in the dark. For impedance measurements, we have used batches with a cell density of 25.5 × 108 cells/mL (OD8.5) and 270.0 × 108 cells/mL (OD90.0). The impedance biochip PS5 can be used to detect the more resistive and less capacitive live L. sphaericus JG-A12 cells. Also, the impedance biochip BS5 can be used to detect the less resistive and more capacitive dead L. sphaericus JG-A12 cells. An outlook on the application of the impedance biochips for high-throughput drug screening, e.g., against multi-drug-resistant Grampositive bacteria, is given

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.Comment: 20 pages, 5 figure