Intrinsic Insulating Ground State in Transition Metal Dichalcogenide TiSe2

The transition metal dichalcogenide TiSe$_2$ has received significant research attention over the past four decades. Different studies have presented ways to suppress the 200~K charge density wave transition, vary low temperature resistivity by several orders of magnitude, and stabilize magnetism or superconductivity. Here we give the results of a new synthesis technique whereby samples were grown in a high pressure environment with up to 180~bar of argon gas. Above 100~K, properties are nearly unchanged from previous reports, but a hysteretic resistance region that begins around 80~K, accompanied by insulating low temperature behavior, is distinct from anything previously observed. An accompanying decrease in carrier concentration is seen in Hall effect measurements, and photoemission data show a removal of an electron pocket from the Fermi surface in an insulating sample. We conclude that high inert gas pressure synthesis accesses an underlying nonmetallic ground state in a material long speculated to be an excitonic insulator.Comment: 11 pages, 7 figure

Excited states at interfaces of a metal-supported ultrathin oxide film

We report layer-resolved measurements of the unoccupied electronic structure of ultrathin MgO films grown on Ag(001). The metal-induced gap states at the metal/oxide interface, the oxide band gap, and a surface core exciton involving an image-potential state of the vacuum are revealed through resonant Auger spectroscopy of the MgKL23L23 Auger transition. Our results demonstrate how to obtain new insights on empty states at interfaces of metal-supported ultrathin oxide films

Short-range phase coherence and origin of the 1T−TiSe21T-{\mathrm{TiSe}}_{2} charge density wave

The impact of variable Ti self-doping on the 1T−TiSe2 charge density wave (CDW) is studied by scanning tunneling microscopy. Supported by density functional theory, we show that agglomeration of intercalated-Ti atoms acts as preferential nucleation centers for the CDW that breaks up in phase-shifted CDW domains whose size directly depends on the intercalated-Ti concentration and which are separated by atomically sharp phase boundaries. The close relationship between the diminution of the CDW domain size and the disappearance of the anomalous peak in the temperature-dependent resistivity allows to draw a coherent picture of the 1T−TiSe2 CDW phase transition and its relation to excitons

Local resilience of the 1T\text{\ensuremath{-}}{\mathrm{TiSe}}_{2} charge density wave to Ti self-doping

In Ti-intercalated self-doped 1T−TiSe2 crystals, the charge density wave (CDW) superstructure induces two nonequivalent sites for Ti dopants. Recently, it has been shown that increasing Ti doping dramatically influences the CDW by breaking it into phase-shifted domains. Here, we report scanning tunneling microscopy and spectroscopy experiments that reveal a dopant-site dependence of the CDW gap. Supported by density functional theory, we demonstrate that the loss of the long-range phase coherence introduces an imbalance in the intercalated-Ti site distribution and restrains the CDW gap closure. This local resilient behavior of the 1T−TiSe2 CDW reveals an entangled mechanism between CDW, periodic lattice distortion, and induced nonequivalent defects

Three-dimensional momentum-resolved electronic structure of 1T-TiSe2:1T\text{-}{\mathrm{TiSe}}_{2}: A combined soft-x-ray photoemission and density functional theory study

1T−TiSe2 is a quasi-two-dimensional transition metal dichalcogenide, which exhibits a charge density wave transition at a critical temperature of ∼200 K as well as low- temperature superconductivity induced by pressure or intercalation. The electronic energy dispersion measured by soft x-ray angle-resolved photoemission is not only momentum resolved parallel to the surface but also perpendicular to it. Experiments are compared to density functional theory based band structure calculations using different exchange-correlation functionals. The results reveal the importance of including spin-orbit coupling for a good description of the experimental bands. Compared to calculations within the local density approximation, the use of the modified Becke-Johnson (mBJ) exchange functional leads to a band structure that does not need an artificial downwards shift of the valence band to fit the experiment. The mBJ functional thus clearly appears as the most adapted functional for the theoretical description of the 1T−TiSe2 band structure within the DFT framework

Tuning the metal-insulator transition in NdNiO3{\mathrm{NdNiO}}_{3} heterostructures via Fermi surface instability and spin fluctuations

We employed in situ pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO3 (NNO) thin films, grown on NdGaO3(110) and LaAlO3(100) substrates. In the metallic phase, we observe three-dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized bands with well-defined quasiparticles. Upon cooling across the MIT in NNO/NGO sample, the quasiparticles lose coherence via a spectral weight transfer from near the Fermi level to localized states forming at higher binding energies. In the case of NNO/LAO, the bands are apparently shifted upward with an additional holelike pocket forming at the corner of the Brillouin zone. We find that the renormalization effects are strongly anisotropic and are stronger in NNO/NGO than NNO/LAO. Our study reveals that substrate-induced strain tunes the crystal field splitting, which changes the FS properties, nesting conditions, and spin-fluctuation strength, and thereby controls the MIT via the formation of an electronic order parameter with QAF∼(1/4,1/4,1/4±δ)

Direct determination of mode-projected electron-phonon coupling in the time-domain

Ultrafast spectroscopies have become an important tool for elucidating the microscopic description and dynamical properties of quantum materials. In particular, by tracking the dynamics of non-thermal electrons, a material's dominant scattering processes -- and thus the many-body interactions between electrons and collective excitations -- can be revealed. Here we present a new method for extracting the electron-phonon coupling strength in the time domain, by means of time and angle-resolved photoemission spectroscopy (TR-ARPES). This method is demonstrated in graphite, where we investigate the dynamics of photo-injected electrons at the K point, detecting quantized energy-loss processes that correspond to the emission of strongly-coupled optical phonons. We show that the observed characteristic timescale for spectral-weight-transfer mediated by phonon-scattering processes allows for the direct quantitative extraction of electron-phonon matrix elements, for specific modes, and with unprecedented sensitivity.Comment: 19 pages, 4 figure

Selective probing of hidden spin-polarized states in inversion-symmetric bulk MoS2{\mathrm{MoS}}_{2}

Spin- and angle-resolved photoemission spectroscopy is used to reveal that a large spin polarization is observable in the bulk centrosymmetric transition metal dichalcogenide MoS2. It is found that the measured spin polarization can be reversed by changing the handedness of incident circularly polarized light. Calculations based on a three-step model of photoemission show that the valley and layer-locked spin- polarized electronic states can be selectively addressed by circularly polarized light, therefore providing a novel route to probe these hidden spin-polarized states in inversion-symmetric systems as predicted by Zhang et al. [Nat. Phys. 10, 387 (2014).]