2,295 research outputs found

    Free-form, form finding and anisotropic grid shell

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    p. 966-876The new geometrical developments open new perspectives for free-form design, making it possible to escape from planar triangular or quadrilateral discretizations. Recent advances in theory algorithms allow for the discretization of any surface using only single curvature panels thus allowing the realisation of smooth double curvature glazed envelops of any form. Grid shell structures usually present a nearly in plane uniform behaviour, but previous realisations have shown that grid shells can be designed also according to an anisotropic inplane arrangement. The control of principal direction and the fine tuning of the stiffness of the different structural elements (arcs, cables etc.) is a tool for adjusting the form-finding thus controlling the resulting geometry. Moreover, the form-finding can also be performed without researching a constant stress (self weight); in this case an even wider range of forms become possible. These new geometrical and structural approaches have been coupled together and tested in re-designing, as a case study, the glazed roof of the Neumunster Abbey in Luxembourg. Such approach allowed for the conception of an efficient structure supporting a smooth double curvature glass skin, made out of only single curvature panels, perfectly coherent with the perimeter of the courtyard i.e. matching all the edges without any gaps.Baldassini, N.; Raynaud, J. (2010). Free-form, form finding and anisotropic grid shell. Editorial Universitat Politècnica de València. http://hdl.handle.net/10251/696

    Anomalous Multiphoton Photoelectric Effect in Ultrashort Time Scales

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    International audienceIn a multiphoton photoelectric process, an electron needs to absorb a given number of photons to escape the surface of a metal. It is shown for the first time that this number is not a constant depending only on the characteristics of the metal and light, but varies with the interaction duration in ultrashort time scales. The phenomenon occurs when electromagnetic energy is transferred, via ultrafast excitation of electron collective modes, to conduction electrons in a duration less than the electron energy damping time. It manifests itself through a dramatic increase of electron production. A basic hypothesis of the photoelectric process is that the photoemissive properties of matter remain unaltered during the interaction with light. Light-metal coupling is tacitly assumed as a perturbation of the electron population that remains in equilibrium during the interaction. Now, it has recently been shown that transient nonequilibrium electron states can exist in ultrashort time scales, in particular , when electromagnetic energy is transferred from a laser pulse to conduction electrons in a lapse of time shorter than the electron-phonon energy transfer duration [1– 4]. In this Letter, we address the basic question of whether the photoemissive properties of a metal can be modified through ultrafast energy transfer and nonequilib-rium electron heating. In a metallic electron gas, transient density disturbances can result in electron collective oscillation modes in the volume and near the surface. Under certain conditions, these so-called surface plasmon (polariton) modes can be excited by light [5,6]. In the case of thin metal films, the surface plasmon modes on the two surfaces can be coupled [7–9] and energy can be transferred from one surface plasmon mode to the other [10]. Collective electron oscillations can exist as well at the interface [11] between two perfect metals due to symmetry breaking at the metal-metal interface. Furthermore, interface and surface plas-mon modes can be coupled [12] in a bilayer metal system made of a metal M 1 (of electron density n 1) covered by a thin metallic layer M 2 (of electron density n 2 < n 1). If the overlayer metal M 2 is thin enough, the field of the surface plasmon can tunnel through the M 2 bulk and excite electron density fluctuations at the interface between the two metals (see Fig. 1). If the metal overlayer is too thick, the field of the surface plasmon must tunnel through too large a distance to excite the density fluctuations between the two metals. Conversely, if it is too thin, the surface plasmon amplitude is damped because of increasing coupling between the two opposite faces of the overlayer. There exists therefore an optimum thickness of the overlayer for which the amplitude of the induced interface plasmon is maximum. An interesting consequence of the interface or surface plasmon coupling effect is that the electron population in the metal overlayer can be in transient nonequilibrium energy states through ultrafast energy transfer from the coupled interface and surface plasmons. Actually, the conduction electrons near the surface and the metal-metal interface experience an effective nonlinear low-frequency force, the so-called ponderomotive force [13,14], resulting from the strongly inhomogeneous high-frequency field of the plasmons, and are accelerated toward regions of decreasing field amplitude. The ponderomotive force plays the role of an applied electrostatic force that transfers electromagnetic energy in a coherent way to an electron population, in contrast with stochastic energy transfer via thermal heating. The maximum energy that can be transferred to a free electron with initial energy E 0 through ponderomotive acceleration in a strong oscillating electri

    Ponderomotive Acceleration of Photoelectrons in Surface-Plasmon-Assisted Multiphoton Photoelectric Emission

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    International audiencePhotoelectrons emitted from a gold target via a surface-plasmon-assisted multiphoton photoelectric process under a femtosecond laser pulse of moderate intensity are much more energetic than in an ordinary photoeffect without electron collective excitation. The phenomenon is interpreted in terms of time-dependent ponderomotive acceleration of the particles by the resonant field localized at the metal surface. The amplitude of the plasmon resonance may be directly estimated by means of the electron energy spectra. The development of powerful lasers more than three decades ago has allowed the investigation of the generalization of the classical photoelectric emission from metals to processes involving the absorption of several photons [1]. In recent years, the advent of laser pulses of ultra-short duration has favored studies in the femtosecond time regime [2]. These investigations can lead to the creation of new high-current ultrafast electron sources. Experimental studies have revealed that the electron emission rate can be greatly enhanced by the excitation of collective electron modes of the metal, the so-called surface plasmons [3,4]. The increase of the photoelectric signal can be qualitatively explained in terms of an assisted photoelectric effect where the energy of femtosecond light pulses is stored by the surface plasmon, creating a hot-electron population that does not have enough time to transfer its energy to the crystal lattice. While the presence of a surface-plasmon excitation is efficient in increasing the production of photoelectrons, an important open question is how the energy of the emitted electrons in such a " surface-plasmon-assisted " photoelectric process may differ from the energy predicted by the familiar photoelectric equation generalized to multiphoton processes. In this Letter, we show that the photoelectron energy is strongly affected by the surface-plasmon field, the modification from the classical values depending on the characteristics of the plasmon resonance. This fact may be easily understood by considering a simple analysis of the photo-electron behavior in the inhomogeneous high-frequency electric field surrounding the metal surface. The analysis involves simple classical concepts such as the notion of time-dependent ponderomotive effects, which have been successfully used in the context of multiphoton ionization of atoms in high-intensity lasers [5]. Consider an electron released from the metal surface after having absorbed a required number n of photons from the laser beam to overcome the work function W of the metal. While traveling in the vacuum dressed by the high-frequency field E sp of the surface plasmon, the total energy of the electron consists of the sum of its kinetic energy § n (given by the Einstein multiphoton photoelectric equation § n ෇ n ¯ hv 2 W) and its quiver energy U sp ෇ e 2

    Electron acceleration by surface plasma waves in the interaction between femtosecond laser pulses and sharp-edged overdense plasmas

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    International audienceThe relativistic acceleration of electrons by the field of surface plasma waves created in the interaction between ultrashort high-intensity laser pulses with sharp-edged overdense plasmas has been investigated. It is shown that the initial phase of the wave experienced by the electrons play a leading part by yielding a well-defined peaked structure in the energy distribution function. This study suggests that resonant excitation of surface plasma waves could result in quasi-monokinetic energetic electron bunches. When the space charge field becomes too strong, this mechanism can evolve toward a true absorption process of the surface wave energy via an enhanced ''vacuum heating'' mechanism generalized to the case of surface plasma waves

    Strongly enhanced laser absorption and electron acceleration via resonant excitation of surface plasma waves

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    International audienceTwo-dimensional (2D) particle-in-cell numerical simulations of the interaction between a high-intensity short-pulse p-polarized laser beam and an overdense plasma are presented. It is shown that, under appropriate physical conditions, a surface plasma wave can be resonantly excited by a short-pulse laser wave, leading to strong relativistic electron acceleration together with a dramatic increase, up to 70%, of light absorption by the plasma. Purely 2D effects contribute to enhancement of electron acceleration. It is also found that the angular distribution of the hot electrons is drastically affected by the surface wave. The subsequent ion dynamics is shown to be significantly modified by the surface plasma wave excitation

    Can we predict the duration of an interglacial?

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    Differences in the duration of interglacials have long been apparent in palaeoclimate records of the Late and Middle Pleistocene. However, a systematic evaluation of such differences has been hampered by the lack of a metric that can be applied consistently through time and by difficulties in separating the local from the global component in various proxies. This, in turn, means that a theoretical framework with predictive power for interglacial duration has remained elusive. Here we propose that the interval between the terminal oscillation of the bipolar seesaw and three thousand years (kyr) before its first major reactivation provides an estimate that approximates the length of the sea-level highstand, a measure of interglacial duration. We apply this concept to interglacials of the last 800 kyr by using a recently-constructed record of interhemispheric variability. The onset of interglacials occurs within 2 kyr of the boreal summer insolation maximum/precession minimum and is consistent with the canonical view of Milankovitch forcing pacing the broad timing of interglacials. Glacial inception always takes place when obliquity is decreasing and never after the obliquity minimum. The phasing of precession and obliquity appears to influence the persistence of interglacial conditions over one or two insolation peaks, leading to shorter (~ 13 kyr) and longer (~ 28 kyr) interglacials. Glacial inception occurs approximately 10 kyr after peak interglacial conditions in temperature and CO2, representing a characteristic timescale of interglacial decline. Second-order differences in duration may be a function of stochasticity in the climate system, or small variations in background climate state and the magnitude of feedbacks and mechanisms contributing to glacial inception, and as such, difficult to predict. On the other hand, the broad duration of an interglacial may be determined by the phasing of astronomical parameters and the history of insolation, rather than the instantaneous forcing strength at inception

    Optical properties of an ensemble of G-centers in silicon

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    We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV (\sim1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6±\pm0.1 \angstrom for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform
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