Far-Field Plume Measurements of a Nested-Channel Hall-Effect Thruster

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/90664/1/AIAA-2011-1016-314.pd

III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template.

Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a III/V laser chip or optical gain materials onto a silicon substrate. A number of integration approaches, including flip-chip bonding, molecule or polymer wafer bonding, and monolithic III/V epitaxy, have been extensively explored in the past decade. Here, we demonstrate a novel photonic integration method of epitaxial regrowth of III/V on a III/V-on-SOI bonding template to realize heterogeneous lasers on silicon. This method decouples the correlated root causes, i.e., lattice, thermal, and domain mismatches, which are all responsible for a large number of detrimental dislocations in the heteroepitaxy process. The grown multi-quantum well vertical p-i-n diode laser structure shows a significantly low dislocation density of 9.5 × 104 cm-2, two orders of magnitude lower than the state-of-the-art conventional monolithic growth on Si. This low dislocation density would eliminate defect-induced laser lifetime concerns for practical applications. The fabricated lasers show room-temperature pulsed and continuous-wave lasing at 1.31 μm, with a minimal threshold current density of 813 A/cm2. This generic concept can be applied to other material systems to provide higher integration density, more functionalities and lower total cost for photonics as well as microelectronics, MEMS, and many other applications

The Combination of Two Concentric Discharge Channels into a Nested Hall-Effect Thruster.

Hall-effect thrusters continue to be one of the most efficient technologies for spacecraft maneuvering and stationkeeping. One of the ongoing efforts in the electric propulsion community is to scale Hall-effect thrusters to high powers (10 kW - 1 MW) while maximizing performance and minimizing the thruster’s mass and size. A nested Hall-effect thruster is one configuration that can satisfy these goals, but the concept was largely untested until the development of a demonstration thruster by the University of Michigan and the Air Force Research Laboratory, with later sponsorship from the Air Force Office of Scientific Research. This prototype nested Hall-effect thruster, known as the X2, features two concentric, annular discharge channels in which xenon gas undergoes ionization and acceleration. Both discharge channels proved capable of operating separately or simultaneously using a shared hollow cathode. Performance measurements showed capabilities on par with state-of-the-art Hall- effect thrusters with additional benefits in low-voltage operation with simultaneous firing of both channels. The X2’s unique features include the availability of single-channel and dual-channel modes. The combination of all modes extends the throttling range of the X2 by allowing the exit area to vary according to the desired thrust-to-power ratio and specific impulse. This study of the X2 nested Hall-effect thruster also investigates how two simultaneously firing channels combine. Thrust measurements show a small increase in performance beyond common facility effects on electric propulsion devices. An array of plasma diagnostics provide further detail on the mechanisms that are responsible for the thrust augmentation, including changes in ion acceleration and ion beam current.PHDAerospace EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/100043/1/rayliang_1.pd

Extranodal Natural-Killer/T-Cell Lymphoma, Nasal Type

The World Health Organization (WHO) classification recognizes 2 main categories of natural killer (NK) cell-derived neoplasms, namely, extranodal NK/T-cell lymphoma, nasal type, and aggressive NK-cell leukaemia. Extranodal nasal NK/T-cell lymphoma is more frequent in the Far East and Latin America. Histopathological and immunophenotypical hallmarks include angiocentricity, angiodestruction, expression of cytoplasmic CD3 epsilon (ε), CD56, and cytotoxic molecules and evidence of Epstein-Barr virus (EBV) infection. Early stage disease, in particular for localized lesion in the nasal region, is treated with chemotherapy and involved-field radiotherapy. On the other hand, multiagent chemotherapy is the mainstay of treatment for advanced or disseminated disease. L-asparaginase-containing regimens have shown promise in treating this condition. The role of autologous hematopoietic stem cell transplantation is yet to be clearly defined. Allogeneic hematopoietic stem cell transplantation, with the putative graft-versus-lymphoma effect, offers a potentially curative option in patients with advanced disease

Estimation and variable selection for generalized additive partial linear models

We study generalized additive partial linear models, proposing the use of polynomial spline smoothing for estimation of nonparametric functions, and deriving quasi-likelihood based estimators for the linear parameters. We establish asymptotic normality for the estimators of the parametric components. The procedure avoids solving large systems of equations as in kernel-based procedures and thus results in gains in computational simplicity. We further develop a class of variable selection procedures for the linear parameters by employing a nonconcave penalized quasi-likelihood, which is shown to have an asymptotic oracle property. Monte Carlo simulations and an empirical example are presented for illustration.Comment: Published in at http://dx.doi.org/10.1214/11-AOS885 the Annals of Statistics (http://www.imstat.org/aos/) by the Institute of Mathematical Statistics (http://www.imstat.org

DeepFuzzer: Accelerated Deep Greybox Fuzzing

Fuzzing is one of the most effective vulnerability detection techniques, widely used in practice. However, the performance of fuzzers may be limited by their inability to pass complicated checks, inappropriate mutation frequency, arbitrary mutation strategy, or the variability of the environment. In this paper, we present DeepFuzzer, an enhanced greybox fuzzer with qualified seed generation, balanced seed selection, and hybrid seed mutation. First, we use symbolic execution in a lightweight approach to generate qualified initial seeds which then guide the fuzzer through complex checks. Second, we apply a statistical seed selection algorithm to balance the mutation frequency between different seeds. Further, we develop a hybrid mutation strategy. The random and restricted mutation strategies are combined to maintain a dynamic balance between global exploration and deep search. We evaluate DeepFuzzer on the widely used benchmark Google fuzzer-test-suite which consists of real-world programs. Compared with AFL, AFLFast, FairFuzz, QSYM, and MOPT in the 24-hour experiment, DeepFuzzer discovers 30%, 240%, 102%, 147%, and 257% more unique crashes, executes 40%, 36%, 36%, 98%, and 15% more paths, and covers 37%, 34%, 34%, 101%, and 11% more branches, respectively. Furthermore, we present the practice of fuzzing a message middleware from Huawei with DeepFuzzer, and 9 new vulnerabilities are reported

Non-volatile heterogeneous III-V/Si photonics via optical charge-trap memory

We demonstrate, for the first time, non-volatile charge-trap flash memory (CTM) co-located with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers (MZIs), asymmetric MZI lattice filters, and ring resonator filters. The MZI CTM exhibits full write/erase operation (100 cycles with 500 states) with wavelength shifts of $\Delta\lambda_{non-volatile} = 1.16 nm$ ($\Delta n_{eff,non-volatile} ~ 2.5 \times 10^{-4}$) and a dynamic power consumption $<$ 20 pW (limited by measurement). Multi-bit write operation (2 bits) is also demonstrated and verified over a time duration of 24 hours and most likely beyond. The cascaded 2nd order ring resonator CTM filter exhibited an improved ER of ~ 7.11 dB compared to the MZI and wavelength shifts of $\Delta\lambda_{non-volatile} = 0.041 nm$ ($\Delta n_{eff, non-volatile} = 1.5 \times 10^{-4}$) with similar pW-level dynamic power consumption as the MZI CTM. The ability to co-locate photonic computing elements and non-volatile memory provides an attractive path towards eliminating the von-Neumann bottleneck

High-Speed and Energy-Efficient Non-Volatile Silicon Photonic Memory Based on Heterogeneously Integrated Memresonator

Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field programmable arrays (FPGAs). However, these circuits are constrained by the limited tuning speed and large power consumption of the phase shifters used. In this paper, introduced for the first time are memresonators, or memristors heterogeneously integrated with silicon photonic microring resonators, as phase shifters with non-volatile memory. These devices are capable of retention times of 12 hours, switching voltages lower than 5 V, an endurance of 1,000 switching cycles. Also, these memresonators have been switched using voltage pulses as short as 300 ps with a record low switching energy of 0.15 pJ. Furthermore, these memresonators are fabricated on a heterogeneous III-V/Si platform capable of integrating a rich family of active, passive, and non-linear optoelectronic devices, such as lasers and detectors, directly on-chip to enable in-memory photonic computing and further advance the scalability of integrated photonic processor circuits