We demonstrate, for the first time, non-volatile charge-trap flash memory
(CTM) co-located with heterogeneous III-V/Si photonics. The wafer-bonded
III-V/Si CTM cell facilitates non-volatile optical functionality for a variety
of devices such as Mach-Zehnder Interferometers (MZIs), asymmetric MZI lattice
filters, and ring resonator filters. The MZI CTM exhibits full write/erase
operation (100 cycles with 500 states) with wavelength shifts of
ΞΞ»nonβvolatileβ=1.16nm (Ξneff,nonβvolatileβΒ 2.5Γ10β4) and a dynamic power consumption < 20 pW (limited by
measurement). Multi-bit write operation (2 bits) is also demonstrated and
verified over a time duration of 24 hours and most likely beyond. The cascaded
2nd order ring resonator CTM filter exhibited an improved ER of ~ 7.11 dB
compared to the MZI and wavelength shifts of ΞΞ»nonβvolatileβ=0.041nm (Ξneff,nonβvolatileβ=1.5Γ10β4) with similar
pW-level dynamic power consumption as the MZI CTM. The ability to co-locate
photonic computing elements and non-volatile memory provides an attractive path
towards eliminating the von-Neumann bottleneck