20,014 research outputs found

    A tetrabenzotriazaporphyrin based organic thin film transistor: Comparison with a device of the phthalocyanine analogue

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    The characteristics of bottom-gate bottom-contact organic thin film field-effect transistors (OTFTs) with 70 nm thick films of solution processed non-peripherally octahexyl-substituted nickel tetrabenzo triazaporphyrin (6NiTBTAP) molecules as active layers on silicon substrates are experimentally studied and the results are compared with the similary configured transistors using the corresponding nickel phthalocyanine (6NiPc) compound. 6NiTBTAP transistors are found to exhibit improved performance over 6NiPc transistors in terms of greater saturation hole mobility, two orders of magnitude higher on/off ratio and lower threshold voltage. This enhanced performance of 6NiTBTAP OTFTs over 6NiPc devices is attributed to improved surface morphology and large grain size of the active 6NiTBTAP film

    Evidence for a T Tauri Phase in Young Brown Dwarfs

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    As part of a multi-faceted program to investigate the origin and early evolution of sub-stellar objects, we present high-resolution Keck optical spectra of 14 very low mass sources in the IC 348 young cluster and the Taurus star-forming cloud. All of our targets, which span a range of spectral types from M5 to M8, exhibit moderate to very strong Hα\alpha emission. In half of the IC 348 objects, the Hα\alpha profiles are broad and asymmetric, indicative of on-going accretion. Of these, IC348-355 (M8) is the lowest mass object to date to show accretion-like Hα\alpha. Three of our ~M6 IC 348 targets with broad Hα\alpha also harbor broad OI (8446\AA) and CaII (8662\AA) emission, and one shows broad HeI (6678\AA) emission; these features are usually seen in strongly accreting classical T Tauri stars. We find that in very low mass accretors, the Hα\alpha profile may be somewhat narrower than that in higher mass stars. We propose that low accretion rates combined with small infall velocities at very low masses can conspire to produce this effect. In the non-accretors in our sample, Hα\alpha emission is commensurate with, or higher than, saturated levels in field M dwarfs of similar spectral type. Our results constitute the most compelling evidence to date that young brown dwarfs undergo a T Tauri-like accretion phase similar to that in stars. This is consistent with a common origin for most low-mass stars, brown dwarfs and isolated planetary mass objects.Comment: to appear in The Astrophysical Journa

    Precessionless spin transport wire confined in quasi-two-dimensional electron systems

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    We demonstrate that in an inversion-asymmetric two-dimensional electron system 2DES with both Rashba and Dresselhaus spin-orbit couplings taken into account, certain transport directions on which no spin precession occurs can be found when the injected spin is properly polarized. By analyzing the expectation value of spin with respect to the injected electron state on each space point in the 2DES, we further show that the adjacent regions with technically reachable widths along these directions exhibit nearly conserved spin. Hence a possible application in semiconductor spintronics, namely, precessionless spin transport wire, is proposed.Comment: 3 pages, 4 figures, to be appeared in Journal of Applied Physics, Proceedings of the 50th MMM Conferenc

    High Redshift Candidates and the Nature of Small Galaxies in the Hubble Deep Field

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    We present results on two related topics: 1. A discussion of high redshift candidates (z>4.5), and 2. A study of very small galaxies at intermediate redshifts, both sets being detected in the region of the northern Hubble Deep Field covered by deep NICMOS observations at 1.6 and 1.1 microns. The high redshift candidates are just those with redshift z>4.5 as given in the recent catalog of Thompson, Weymann and Storrie-Lombardi, while the ``small galaxy'' sample is defined to be those objects with isophotal area <= 0.2 squ. arcsec and with photometric redshifts 1<z<4.5. Of the 19 possible high redshift candidates listed in the Thompson et al. catalog, 11 have (nominal) photometric redshifts less than 5.0. Of these, however, only 4 are ``robust'' in the sense of yielding high redshifts when the fluxes are randomly perturbed with errors comparable to the estimated measuring error in each wave band. For the 8 other objects with nominal photometric redshifts greater than 5.0, one (WFPC2 4--473) has a published spectroscopic redshift. Of the remaining 7, 4 are robust in the sense indicated above. Two of these form a close pair (NIC 586 and NIC 107). The redshift of the object having formally the highest redshift, at 6.56 (NIC118 = WFPC2 4--601), is problematic, since F606W and F814W flux are clearly present, and the nature of this object poses a dilemma. (abridged)Comment: 44 pages, 12 figures, to appear in ApJ v591, July 10, 200

    Exact Persistence Exponent for One-dimensional Potts Models with Parallel Dynamics

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    We obtain \theta_p(q) = 2\theta_s(q) for one-dimensional q-state ferromagnetic Potts models evolving under parallel dynamics at zero temperature from an initially disordered state, where \theta_p(q) is the persistence exponent for parallel dynamics and \theta_s(q) = -{1/8}+ \frac{2}{\pi^2}[cos^{-1}{(2-q)/q\sqrt{2}}]^2 [PRL, {\bf 75}, 751, (1995)], the persistence exponent under serial dynamics. This result is a consequence of an exact, albeit non-trivial, mapping of the evolution of configurations of Potts spins under parallel dynamics to the dynamics of two decoupled reaction diffusion systems.Comment: 13 pages Latex file, 5 postscript figure

    High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

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    © 2011 National Institute for Materials ScienceSolution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3V for untreated devices to −2V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.Technology Strategy Board, UK (Project No: TP/6/EPH/6/S/K2536J)
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