4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement

Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area

A new type of high voltage termination, namely the “deep p-ring trench” termination design for high voltage, high power devices is presented and extensively simulated. Termination of such devices consumes a large proportion of the chip size; the proposed design concept not only reduces the termination silicon area required, it also removes the need for an additional mask as is the case of the traditional p+ ring type termination. Furthermore, the presence of the p-ring under and around the bottom of the trench structure reduces the electric field peaks at the corners of the oxide which results in reduced hot carrier injection and improved device reliabilit

The Stripe Fortified GCT:A new GCT design for maximizing the controllable current

In this paper we introduce a new GCT design, namely the Stripe Fortified GCT, for the purpose of maximizing the controllable current by optimizing the current flow path in the device during turn-off. The main design of the new device along with variants are introduced. The MCC performance of this novel structure is assessed with a developed two dimensional model for full wafer simulations. Our results show that this new design is a very good candidate for increasing the MCC to values more than 5000A

New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop

© 2016 IEEE. A new design approach for bi-mode gatecommutated thyristors (BGCTs) is proposed for high-current controllability and low ON-state voltage drop. Using a complex multi-cell mixed-mode simulation model which can capture the maximum controllable current (MCC) of large area devices, a failure analysis was performed to demonstrate that the new design concept can increase the MCC by about 27% at room temperature and by about 17% at 400 K while minimizing the ON-state voltage drop. The simulations depict that the improvement comes from the new approach to terminate the GCT part in the BGCT way of intertwining GCT and diode regions for reverse conducting operation

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating

New Plasma Shaping Technology for Optimal High Voltage Diode Performance Keywords

Abstract In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV diodes for next generation high power IGBT modules will be presented. The new diode range offers low losses and soft recovery characteristics combined with a high reverse recovery safe operating area and superior surge current capability. The new diode technology employs a double local lifetime-control method using He ++ irradiation to control the on-state electron-hole distribution on both the anode and cathode sides of the diode