223 research outputs found

    Revealing natural relationships among arbuscular mycorrhizal fungi: culture line BEG47 represents Diversispora epigaea, not Glomus versiforme

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    Background: Understanding the mechanisms underlying biological phenomena, such as evolutionarily conservative trait inheritance, is predicated on knowledge of the natural relationships among organisms. However, despite their enormous ecological significance, many of the ubiquitous soil inhabiting and plant symbiotic arbuscular mycorrhizal fungi (AMF, phylum Glomeromycota) are incorrectly classified. Methodology/Principal Findings: Here, we focused on a frequently used model AMF registered as culture BEG47. This fungus is a descendent of the ex-type culture-lineage of Glomus epigaeum, which in 1983 was synonymised with Glomus versiforme. It has since then been used as ‘G. versiforme BEG47’. We show by morphological comparisons, based on type material, collected 1860–61, of G. versiforme and on type material and living ex-type cultures of G. epigaeum, that these two AMF species cannot be conspecific, and by molecular phylogenetics that BEG47 is a member of the genus Diversispora. Conclusions: This study highlights that experimental works published during the last >25 years on an AMF named ‘G. versiforme’ or ‘BEG47’ refer to D. epigaea, a species that is actually evolutionarily separated by hundreds of millions of years from all members of the genera in the Glomerales and thus from most other commonly used AMF ‘laboratory strains’. Detailed redescriptions substantiate the renaming of G. epigaeum (BEG47) as D. epigaea, positioning it systematically in the order Diversisporales, thus enabling an evolutionary understanding of genetical, physiological, and ecological traits, relative to those of other AMF. Diversispora epigaea is widely cultured as a laboratory strain of AMF, whereas G. versiforme appears not to have been cultured nor found in the field since its original description

    In-situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy

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    We report on the deterministic fabrication of sub-um mesa structures containing single quantum dots by in-situ electron-beam lithography. The fabrication method is based on a two-step lithography process using a low-temperature cathodoluminescence (CL) spectroscopy setup. In the first step the position and spectral features of single InGaAs quantum dots (QDs) are detected by CL. Then circular sub-um mesa-structures are exactly defined by high-resolution electron-beam lithography and subsequent etching in the second step. CL spectroscopy and micro-photoluminscence spectroscopy demonstrate the high optical quality of the single-QD mesa-structures with emission linewidths below 15 ueV and g(2)(0) = 0.04. Our lithography method allows for an alignment precision better than 100 nm which paves the way for a fully-deterministic device technology using in-situ CL lithography.Comment: 4 pages, 4 figure

    Metal-insulator Crossover Behavior at the Surface of NiS_2

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    We have performed a detailed high-resolution electron spectroscopic investigation of NiS2_2 and related Se-substituted compounds NiS2x_{2-x}Sex_x, which are known to be gapped insulators in the bulk at all temperatures. A large spectral weight at the Fermi energy of the room temperature spectrum, in conjunction with the extreme surface sensitivity of the experimental probe, however, suggests that the surface layer is metallic at 300 K. Interestingly, the evolution of the spectral function with decreasing temperature is characterized by a continuous depletion of the single-particle spectral weight at the Fermi energy and the development of a gap-like structure below a characteristic temperature, providing evidence for a metal-insulator crossover behavior at the surfaces of NiS2_2 and of related compounds. These results provide a consistent description of the unusual transport properties observed in these systems.Comment: 12 pages, 3 figure

    Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation

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    We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent achievement of stoichiometry. We have also succeeded in growing the films in a layer-by-layer fashion by fine tuning the Eu vs. oxygen deposition rates. The initial stages of growth involve the limited supply of oxygen from the YSZ substrate, but the EuO stoichiometry can still be well maintained. The films grown were sufficiently smooth so that the capping with a thin layer of aluminum was leak tight and enabled ex situ experiments free from trivalent Eu species. The findings were used to obtain recipes for better epitaxial growth of EuO on MgO (001).Comment: 10 pages, 15 figure

    Epitaxy, stoichiometry, and magnetic properties of Gd-doped EuO films on YSZ (001)

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    We have succeeded in preparing high-quality Gd-doped single-crystalline EuO films. Using Eu-distillation-assisted molecular beam epitaxy and a systematic variation in the Gd and oxygen deposition rates, we have been able to observe sustained layer-by-layer epitaxial growth on yttria-stabilized cubic zirconia (001). The presence of Gd helps to stabilize the layer-by-layer growth mode. We used soft x-ray absorption spectroscopy at the Eu and Gd M4,5 edges to confirm the absence of Eu3+ contaminants and to determine the actual Gd concentration. The distillation process ensures the absence of oxygen vacancies in the films. From magnetization measurements we found the Curie temperature to increase smoothly as a function of doping from 70 K up to a maximum of 125 K. A threshold behavior was not observed for concentrations as low as 0.2%.Comment: 8 pages, 9 figure

    Electronic structure of NiS1x_{1-x}Sex_x across the phase transition

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    We report very highly resolved photoemission spectra of NiS(1-x)Se(x) across the so-called metal-insulator transition as a function of temperature as well as composition. The present results convincingly demonstrate that the low temperature, antiferromagnetic phase is metallic, with a reduced density of states at EF_F. This decrease is possibly due to the opening of gaps along specific directions in the Brillouin zone caused by the antiferromagnetic ordering.Comment: Revtex, 4 pages, 3 postscript figure

    Accelerating the laser-induced demagnetization of a ferromagnetic film by antiferromagnetic order in an adjacent layer

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    We study the ultrafast demagnetization of Ni/NiMn and Co/NiMn ferromagnetic/antiferromagnetic bilayer systems after excitation by a laser pulse. We probe the ferromagnetic order of Ni and Co using magnetic circular dichroism in time-resolved pump-probe resonant x-ray reflectivity. Tuning the sample temperature across the antiferromagnetic ordering temperature of the NiMn layer allows us to investigate effects induced by the magnetic order of the latter. The presence of antiferromagnetic order in NiMn speeds up the demagnetization of the ferromagnetic layer, which is attributed to bidirectional laser-induced superdiffusive spin currents between the ferromagnetic and the antiferromagnetic layer

    Ultrafast Optically Induced Ferromagnetic State in an Elemental Antiferromagnet

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    We present evidence for an ultrafast optically induced ferromagnetic alignment of antiferromagnetic Mn in Co/Mn multilayers. We observe the transient ferromagnetic signal at the arrival of the pump pulse at the Mn L3 resonance using x-ray magnetic circular dichroism in reflectivity. The timescale of the effect is comparable to the duration of the excitation and occurs before the magnetization in Co is quenched. Theoretical calculations point to the imbalanced population of Mn unoccupied states caused by the Co interface for the emergence of this transient ferromagnetic state

    Prediction of huge X-ray Faraday rotation at the Gd N_4,5 threshold

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    X-ray absorption spectra in a wide energy range around the 4d-4f excitation threshold of Gd were recorded by total electron yield from in-plane magnetized Gd metal films. Matching the experimental spectra to tabulated absorption data reveals unprecedented short light absorption lengths down to 3 nm. The associated real parts of the refractive index for circularly polarized light propagating parallel or antiparallel to the Gd magnetization, determined through the Kramers-Kronig transformation, correspond to a magneto-optical Faraday rotation of 0.7 degrees per atomic layer. This finding shall allow the study of magnetic structure and magnetization dynamics of lanthanide elements in nanosize systems and dilute alloys.Comment: 4 pages, 2 figures, final version resubmitted to Phys. Rev. B, Brief Reports. Minor change

    Optical control of 4f orbital state in rare-earth metals

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    Information technology demands continuous increase of data-storage density. In high-density magnetic recording media, the large magneto-crystalline anisotropy (MCA) stabilizes the stored information against decay through thermal fluctuations. In the latest generation storage media, MCA is so large that magnetic order needs to be transiently destroyed by heat to enable bit writing. Here we show an alternative approach to control high-anisotropy magnets: With ultrashort laser pulses the anisotropy itself can be manipulated via electronic state excitations. In rare-earth materials like terbium metal, magnetic moment and high MCA both originate from the 4f electronic state. Following infrared laser excitation 5d-4f electron-electron scattering processes lead to selective orbital excitations that change the 4f orbital occupation and significantly alter the MCA. Besides these excitations within the 4f multiplet, 5d-4f electron transfer causes a transient change of the 4f occupation number, which, too, strongly alters the MCA. Such MCA change cannot be achieved by heating: The material would rather be damaged than the 4f configuration modified. Our results show a way to overcome this limitation for a new type of efficient magnetic storage medium. Besides potential technological relevance, the observation of MCA-changing excitations also has implications for a general understanding of magnetic dynamics processes on ultrashort time scales, where the 4f electronic state affects the angular momentum transfer between spin system and lattice.Comment: Manuscript (14 pages, 3 figures) and Supplementary Information (22 pages, 9 figures
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