Gamma Rays From The Galactic Center and the WMAP Haze

Recently, an analysis of data from the Fermi Gamma Ray Space Telescope has revealed a flux of gamma rays concentrated around the inner ~0.5 degrees of the Milky Way, with a spectrum that is sharply peaked at 2-4 GeV. If interpreted as the products of annihilating dark matter, this signal implies that the dark matter consists of particles with a mass between 7.3 and 9.2 GeV annihilating primarily to charged leptons. This mass range is very similar to that required to accommodate the signals reported by CoGeNT and DAMA/LIBRA. In addition to gamma rays, the dark matter is predicted to produce energetic electrons and positrons in the Inner Galaxy, which emit synchrotron photons as a result of their interaction with the galactic magnetic field. In this letter, we calculate the flux and spectrum of this synchrotron emission assuming that the gamma rays from the Galactic Center originate from dark matter, and compare the results to measurements from the WMAP satellite. We find that a sizable flux of hard synchrotron emission is predicted in this scenario, and that this can easily account for the observed intensity, spectrum, and morphology of the "WMAP Haze".Comment: 5 pages, 4 figure

Free energy density for mean field perturbation of states of a one-dimensional spin chain

Motivated by recent developments on large deviations in states of the spin chain, we reconsider the work of Petz, Raggio and Verbeure in 1989 on the variational expression of free energy density in the presence of a mean field type perturbation. We extend their results from the product state case to the Gibbs state case in the setting of translation-invariant interactions of finite range. In the special case of a locally faithful quantum Markov state, we clarify the relation between two different kinds of free energy densities (or pressure functions).Comment: 29 pages, Section 5 added, to appear in Rev. Math. Phy

Theory of Magnetic Anisotropy in III_{1-x}Mn_{x}V Ferromagnets

We present a theory of magnetic anisotropy in ${\rm III}_{1-x}{\rm Mn}_{x}{\rm V}$ diluted magnetic semiconductors with carrier-induced ferromagnetism. The theory is based on four and six band envelope functions models for the valence band holes and a mean-field treatment of their exchange interactions with ${\rm Mn}^{++}$ ions. We find that easy-axis reorientations can occur as a function of temperature, carrier density $p$, and strain. The magnetic anisotropy in strain-free samples is predicted to have a $p^{5/3}$ hole-density dependence at small $p$, a $p^{-1}$ dependence at large $p$, and remarkably large values at intermediate densities. An explicit expression, valid at small $p$, is given for the uniaxial contribution to the magnetic anisotropy due to unrelaxed epitaxial growth lattice-matching strains. Results of our numerical simulations are in agreement with magnetic anisotropy measurements on samples with both compressive and tensile strains. We predict that decreasing the hole density in current samples will lower the ferromagnetic transition temperature, but will increase the magnetic anisotropy energy and the coercivity.Comment: 15 pages, 15 figure

Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.Comment: 4 pages, 3 figure

Rate of Evaporation of Manganese, Copper, Tin, Chromium, and Sulphur from Molten Iron under Vacuum

The vacuum melting of Fe-Mn, Fe-Cu, Fe-Sn, Fe-Cr, Fe-S, and Fe-Si-S alloys was carried out at 1600℃ by using a high-frequency induction furnace. The evaporation of Mn, Cu, Sn, Cr, and S follows first-order kinetics and the specific evaporation constant K^s of each of these elements was obtained. The K^s of sulphur in Fe-Si-S alloys increases with the increase of silicon content. For each of these elements in the binary alloys, the rate constant of evaporation and of transport in melt and the ratio of surface concentration to bulk concentration C^s/C^m were obtained. Furthermore, the evaporation coefficient α of each of these elements was obtained both experimentally and theoretically according to the equation derived by Olette. It was confirmed that for each of these elements in the binary alloys the theoretical value of the product α. C^s/C^m is close to the experimental value of α

Activity ageing in growing networks

We present a model for growing information networks where the ageing of a node depends on the time at which it entered the network and on the last time it was cited. The model is shown to undergo a transition from a small-world to large-world network. The degree distribution may exhibit very different shapes depending on the model parameters, e.g. delta-peaked, exponential or power-law tailed distributions.Comment: 9 pages, 2 figure

A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

A density functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density functional theory are the charge and spin densities of the itinerant carriers and the charge and localized spins of the impurities. The theory is applied to study the Curie temperature of planar heterostructures of III-V semiconductors doped with manganese atoms. The mean-field, virtual-crystal and effective-mass approximations are adopted to calculate the electronic structure, including the spin-orbit interaction, and the magnetic susceptibilities, leading to the Curie temperature. By means of these results, we attempt to understand the observed dependence of the Curie temperature of planar $\delta$-doped ferromagnetic structures on variation of their properties. We predict a large increase of the Curie Temperature by additional confinement of the holes in a $\delta$-doped layer of Mn by a quantum well.Comment: 8 pages, 7 figure