A 1-W, 30-ghz, CPW Amplifier for ACTS Small Terminal Uplink

The progress is described of the development of a 1 W, 30 GHz, coplanar waveguide (CPW) amplifier for the Advanced Communication Technology Satellite (ACTS)Small Terminal Uplink. The amplifier is based on Texas Instruments' monolithic microwave integrated circuit (MMIC) amplifiers; a three stage, low power amplifier, and a single stage, high power amplifier. The amplifiers have a power output of 190 mW and 0.710 W, gain of 23 and 4.2 dB, and efficiencies of 30.2 and 24 percent for the three stage and one stage amplifiers, respectively. The chips are to be combined via a CPW power divider/combiner circuit to yield the desired 1 W of output power

Optically controlled GaAs dual-gate MESFET and permeable base transistors

Optically induced voltage and dc characteristics of the GaAs Dual-gate MESFET and the Permeable Base Transistor (PBT) with optical illumination at wavelength below 0.87 microns were obtained and compared with GaAs MESFET. It was observed that PBT can handle higher current density when illuminated

A flexible CPW package for a 30 GHz MMIC amplifier

A novel package, which consists of a carrier housing, has been developed for monolithic-millimeter wave Integrated Circuit amplifiers which operate at 30 giga-Hz. The carrier has coplanar waveguide (CPW) interconnects and provides heat-sinking, tuning, and cascading capabilities. The housing provides electrical isolation, mechanical protection and a feed-thru for biasing

Channelized coplanar waveguide pin-diode switches

Three different types of p-i-n diode, reflective CPW switches are presented. The first two switches are the series and the shunt mounted diode switches. Each has achieved greater than 15 dB of isolation over a broad bandwidth. The third switch is a narrow band, high isolation switched filter which has achieved 19 dB of isolation. Equivalent circuits and measured performance for each switch is presented

Microwave characterization and modeling of GaAs/AlGaAs heterojunction bipolar transistors

The characterization and modeling of a microwave GaAs/AlGaAs heterojunction Bipolar Transistor (HBT) are discussed. The de-embedded scattering parameters are used to derive a small signal lumped element equivalent circuit model using EEsof's Touchstone software package. Each element in the equivalent circuit model is shown to have its origin within the device. The model shows good agreement between the measured and modeled scattering parameters over a wide range of bias currents. Further, the MAG (maximum available power gain) and the h sub 21 (current gain) calculated from the measured data and those predicted by the model are also in good agreement. Consequently, the model should also be capable of predicting the f sub max and the f sub T of other HBTs

Detection of radio-frequency modulated optical signals by two and three terminal microwave devices

An interdigitated photoconductor (two terminal device) on GaAlAs/GaAs heterostructure was fabricated and tested by an electro-optical sampling technique. Further, the photoresponse of GaAlAs/GaAs HEMT (three terminal device) was obtained by illuminating the device with an optical signal modulated up to 8 GHz. Gain-bandwidth product, response time, and noise properties of photoconductor and HEMT devices were obtained. Monolithic integration of these photodetectors with GaAs microwave devices for optically controlled phased array antenna applications is discussed

Commercial phosphoric acid fuel cell system technology development

Reducing cost and increasing reliability were the technology drivers in both the electric utility and on-site integrated energy system applications. The longstanding barrier to the attainment of these goals was materials. Differences in approaches and their technological features, including electrodes, matrices, intercell cooling, bipolar/separator plates, electrolyte management, fuel selection, and system design philosophy were discussed

Status of commercial phosphoric acid fuel cell system development

In both the electric utility and onsite integrated energy system applications, reducing cost and increasing reliability are the main technology drivers. The longstanding barrier to the attainment of these goals, which manifests itself in a number of ways, was materials. The differences in approach among the three major participants (United Technologies Corporation, Westinghouse Electric Corporation/Energy Research Corporation, and Engelhard Industries) and their unique technological features, including electrodes, matrices, intercell cooling, bipolar/separator plates, electrolyte management, fuel selection and system design philosophy are discussed

Coplanar Waveguide Radial Line Stub

A coplanar waveguide radial line stub resonator is experimentally characterized with respect to stub radius, sectoral angle, substrate thickness, and relative dielectric constant. A simple closed-form design equation which predicts the resonance radius of the stub is presented

Experimental investigations on channelized coplanar waveguide

A new variant of coplanar waveguide (CPW) which was termed channelized coplanar waveguide (CCPW) is presented. Measured propagation characteristics for CCPW such as epsilon(eff) and unloaded Q as a function of geometrical parameters and frequency are presented. The measured and modeled epsilon(eff) are also compared. Equivalent circuit model element values are presented for a CCPW open circuit and a CCPW right angle bend. A CCPW matched T-junction, matched 1:3 junction, and a novel coax-to-CCPW in-phase, N-way, radial power divider are also demonstrated